IRG4PC40UPBF

PD-95184 IRG4PC40UPbF INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package • Lead-Free C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. TO-247AC Max. 600 40 20 160 160 ±20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --------------------- Typ. -----0.24 -----6 (0.21) Max. 0.77 -----40 ------ Units °C/W g (oz) www.irf.com 1 04/23/04 IRG4PC40UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. 600 18 ------------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance U 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES V(BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage T ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Typ. ------0.63 1.72 2.15 1.7 ----13 18 ------------Max. Units Conditions ---V VGE = 0V, IC = 250µA ---V VGE = 0V, IC = 1.0A See Fig. 2, 5 ---- V/°C VGE = 0V, IC = 1.0mA 2.1 IC = 20A VGE = 15V ---V IC = 40A ---IC = 20A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE = 100V, IC = 20A 250 VGE = 0V, VCE = 600V 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C 2500 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 100 16 40 34 19 110 120 0.32 0.35 0.67 30 19 220 160 1.4 13 2100 140 34 Max. Units Conditions 150 IC = 20A 25 nC VCC = 400V See Fig. 8 60 VGE = 15V ---TJ = 25°C ---ns IC = 20A, VCC = 480V 175 VGE = 15V, RG = 10 Ω 180 Energy losses include "tail" ------mJ See Fig. 10, 11, 13, 14 1.0 ---TJ = 150°C, ---ns IC = 20A, VCC = 480V ---VGE = 15V, RG = 10 Ω ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. (See fig. 13a) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC40UPbF 80 F o r b o th : T ria ng u la r w a v e : 60 D uty c y c le : 5 0 % TJ = 1 2 5 ° C T s ink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 4 0 W Load Current (A) C la m p v o lta g e : 8 0 % o f ra te d S q u a re w a v e : 40 6 0 % o f ra ted v o ltag e 20 Id e a l d io d e s 0 0.1 1 10 A 100 f , F re q uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 IC , Collector-to-Emitter Current (A) I C , C o lle cto r-to -E m itte r C u rre n t (A ) 100 TJ = 25°C T J = 150°C 100 TJ = 1 5 0 ° C 10 10 T J = 2 5 °C 1 0.1 1 V G E = 15V 20µs PULSE WIDTH A 10 1 4 6 8 VCC = 10V 5 µ s P U L S E W ID T H A 10 12 VC E , Collector-to-Emitter Volta g e (V) VG E , G a te -to -E m itte r V o lta g e ( V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40UPbF 40 V C E , Collector-to-Emitter Voltage (V) V G E = 15V 2.5 Maximum DC Collector Current (A) V G E = 1 5V 80µs PULSE WIDTH I C = 40A 30 2.0 20 I C = 20A 1.5 10 I C = 10A 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 TC , Case Temperature (°C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Response (Z th JC ) D = 0 .5 0 0.2 0 0 .1 0.1 0 0 .05 0.0 2 0.0 1 S IN G LE P UL SE (T H ER M A L R E SP O NS E ) PD M t 1 t2 N o te s: 1 . D u ty fa c to r D = t 1 / t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40UPbF 4000 20 V G E , G a te-to -Em itter V oltage (V ) V GE = C ie s = C re s = C oes = 0V, f = 1M H z C ge + C gc , Cc e S H O R T E D C gc C ce + C gc VCE = 400V I C = 20A 16 C , C a pac itan ce (pF ) 3000 C ie s 12 2000 C o es C re s 8 1000 4 0 1 10 A 100 0 0 20 40 60 80 100 A 120 V C E , C ollector-to-Em itter V olta g e ( V ) Q g , To ta l G a te C h a r g e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.1 1.0 Total Switching Losses (mJ) VC C VG E TJ IC = 4 80V = 15V = 25°C = 20A 10 R G = 10Ω V G E = 1 5V V C C = 480V I C = 40A Total Switching Losses (mJ) 0.9 I C = 20A 1 0.8 I C = 10A 0.7 0.6 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( Ω) TJ , Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40UPbF 4.0 3.0 I C , C ollector-to-E m itter Current (A ) Total Switching Losses (mJ) RG TJ V CC V GE = = = = 10Ω 1 50°C 480V 15V 1000 VG E E 2 0V G= T J = 125 °C 100 2.0 S A FE O P E R A TIN G A R E A 10 1.0 0.0 0 10 20 30 40 50 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC40UPbF L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S VC D .U .T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4PC40UPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLE D ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIE R LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/04 8 www.irf.com