IRG4PC50F

PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 70 39 280 280 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 0.64 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 12/30/00 IRG4PC50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.62 — 1.45 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.79 — 1.53 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -14 gfe Forward Transconductance U 21 30 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.6 IC = 39A — IC = 70A See Fig.2, 5 V — IC = 39A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 39A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 2000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 190 28 65 31 25 240 130 0.37 2.1 2.47 28 24 390 230 5.0 13 4100 250 49 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V — — TJ = 25°C ns 350 IC = 39A, VCC = 480V 190 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 3.0 — TJ = 150°C, — IC = 39A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50F 100 F or b oth: T ria n g u la r w a v e : 80 L oa d C u rre n t (A ) D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d P ow er D is sip atio n = 4 0 W C lam p v o lta ge : 8 0% o f rate d 60 S q u a re w a ve : 6 0% o f ra te d v olta ge 40 20 Id e a l dio d e s 0 0.1 1 10 A 100 f, F re q u e nc y ( k H z ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 1000 100 I C , C ollec to r-to -Em itter C urre n t (A) 100 T J = 1 50 ° C TJ = 2 5 ° C 10 TJ = 1 5 0 °C 10 TJ = 2 5 °C 1 0.1 1 VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 10 1 5 6 7 8 9 VC C = 5 0 V 5µ s P U L S E W ID TH A 10 11 12 VC E , C o lle c to r-to -E m itte r V o lta g e ( V ) VG E , G a te -to -E m itte r V o lta g e ( V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50F 70 M aximum D C Collector Current (A ) 60 V CE , C olle ctor-to-E m itte r V oltage (V) V G E = 15 V 2.5 V G E = 1 5V 8 0 µs P U L S E W ID TH 50 I C = 78 A 2.0 40 30 I C = 39 A 1.5 20 10 I C = 20A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 A 140 160 T C , C ase Tem perature ( ° C) T J , Ju n c tio n Te m p e ra tu re ( ° C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Therm al Re spo nse (Z thJC ) D = 0 .5 0 0 .2 0 0 .1 0 .1 0 0 .0 5 PDM t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 1 t2 0 .0 2 0 .0 1 N o te s : 1 . D u ty fa c to r D = t 1 / t2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangu lar Pulse Du ration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50F 8000 VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc 20 SHORTED V G E , G a te -to -E m itte r V oltage (V ) A V CE = 4 0 0 V IC = 39A 16 C, Capacitance (pF) 6000 C i es 4000 12 C o es 2000 8 Cr es 4 0 1 10 100 0 0 40 80 120 160 A 200 V C E , Collector-to-Emitter Volta g e (V) Q g , To ta l G a te C h a r g e ( n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.8 3.6 Total Switching Losses (mJ) 3.4 Total Switching Losses (mJ) VC C VG E TJ IC = 4 80V = 15V = 25 ° C = 39A 100 R G = 5 .0 Ω V G E = 1 5V V C C = 480V 10 I C = 78A IC = 39A I C = 20A 3.2 3.0 1 2.8 2.6 2.4 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance (Ω) TJ , Junction Temperature ( ° C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50F 12 Total Switching Losses (mJ) 10 I C , C ollector-to-E mitte r C urren t (A) RG TJ V CC V GE = = = = 5 .0 Ω 1 50 ° C 480V 15V 1000 VG E E 2 0V G= T J = 12 5 ° C S A FE O P E R A TIN G A R E A 100 8 6 4 10 2 0 0 20 40 60 80 A 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC50F L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4PC50F Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) * 3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X L O N G E R L E A D E D ( 2 0m m ) V E R S IO N A V A IL A B LE ( T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com