IRG4PC50S

PD - 91581A IRG4PC50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES = 600V G E VCE(on) typ. = 1.28V @VGE = 15V, IC = 41A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 70 41 140 140 ± 20 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6.0 (0.21) Max. 0.64 ––– 40 ––– Units °C/W g (oz) 1 www.irf.com 2/7/2000 IRG4PC50S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — Temperature Coeff. of Breakdown Voltage — 0.75 — 1.28 Collector-to-Emitter Saturation Voltage — 1.62 — 1.28 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -9.3 Forward Transconductance U 17 34 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 1.36 IC = 41A VGE = 15V — IC = 80A See Fig.2, 5 V — IC = 41A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 41A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 180 24 61 33 30 650 400 0.72 8.27 8.99 31 31 1080 620 15 13 4100 250 48 Max. Units Conditions 280 IC = 41A 37 nC VCC = 400V See Fig. 8 92 VGE = 15V — — TJ = 25°C ns 980 IC = 41A, VCC = 480V 600 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9, 10, 14 13 — TJ = 150°C, — IC = 41A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 11, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4PC50S 100 F o r b o th : T ria n g u la r wa v e : I 80 D uty cy c le: 50% T J = 125 ° C T s ink = 90 ° C Ga te drive as s pec ified Load Current ( A ) P o w e r D i ss i p a tio n = 4 0 W C la m p v o lta g e : 8 0 % o f ra te d 60 S q u are wa ve: 6 0 % o f ra te d vo lt a g e 40 I 20 Id e a l di o de s 0 0.1 1 10 A 100 f, Freq uenc y ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 o C  10 10 TJ =  150 o C TJ = 25 o C  V = 15V  20µs PULSE WIDTH GE 1 10 TJ = 25 oC  V = 50V  5µs PULSE WIDTH CC 5 6 7 8 9 10 1 0.1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PC50S 80 L IM IT E D B Y P A C K A G E V G E = 15 V 2.2 VCE , Collector-to-Emitter Voltage(V) M axim um D C C ollector C urrent (A) V = 15V  80 us PULSE WIDTH GE 2.0  I C = 82 A 60 1.8 1.6 40 1.4  I C = 41 A  I C =20.5 A 20 1.2 1.0 0 25 50 75 100 125 150 0.8 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE) 0.01 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50S 8000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 41A 16 Cies  4000 12 8 2000 C oes C res 4 0 1 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10.0 Total Switching Losses (mJ) 9.5 Total Switching Losses (mJ)  V CC = 480V V GE = 15V TJ = 25 ° C I C = 41A 100  5.0Ω RG = Ohm VGE = 15V VCC = 480V  IC = 82 A  IC = 41 A 10  IC = 20.5 A 9.0 8.5 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG Gate Resistance Ω ) RG , Gate Resistance ( (Ohm) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PC50S 40 30 20 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ)  RG TJ VCC VGE 5.0Ω = Ohm = 150 ° C = 480V = 15V 1000  VGE = 20V T J = 125 oC 100 10 10 0 0 20 40 60 80 SAFE OPERATING AREA 1 100 1 10 100 1000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC50S L 50V 1 00 0V VC * 0 - 480V D .U .T. RL = 480V 4 X I C@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4PC50S Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 14 .80 (.583 ) 14 .20 (.559 ) 4.30 (.1 70) 3.70 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 ) L O N G E R L E A D E D ( 2 0m m ) V E R S IO N A V A IL A B LE ( T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P ) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 8 www.irf.com