IRG4PC60F-PPBF

PD - 95567 IRG4PC60F-PPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. • Lead-Free C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specified application conditions. • Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. • Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Maximum Reflow Temperature ‡ Max. 600 90 60 120 120 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) 230 (Time above 183°C should not exceed 100s) Units V A V mJ W °C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (Typical Socket Mount) Junction-to-Ambient (PCB Mount, Steady State)† Weight Typ. ––– 0.24 ––– ––– 6 (0.21) Max. 0.24 ––– 40 20 ––– Units °C/W g (oz) www.irf.com 1 07/15/04 IRG4PC60F-PPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage „ 16 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.13 — 1.5 VCE(ON) Collector-to-Emitter Saturation Voltage — 1.7 — 1.5 VGE(th) Gate Threshold Voltage 3.0 — ∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 gfe Forward Transconductance … 36 69 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 60A — IC = 90A See Fig.2, 5 V — IC = 60A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 60A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 290 40 100 42 66 310 170 0.30 4.6 4.9 39 66 470 300 8.8 13 6050 360 66 Max. Units Conditions 340 IC = 40A 47 nC VCC = 400V See Fig. 8 130 VGE = 15V — — TJ = 25°C ns 360 IC = 60A, VCC = 480V 220 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 6.3 — TJ = 150°C, — IC = 60A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, Rg = 5.0W. (See fig. 13a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. „ Pulse width ≤ 80µs; duty factor ≤ 0.1%.  … Pulse width 5.0µs, single shot. † When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ‡ Refer to application note # 1023, "Surface Mounting of Larger Devices." 2 www.irf.com IRG4PC60F-PPbF 80 70 60 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 73W for Heatsink Mount Power Dissipation = 3.5W for typical PCB socket Mount Load Current ( A ) 50 40 30 20 10 0 0.1 60% of rated voltage Ideal diodes 1 10 100 f , Frequency ( kHz ) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 1000 IC, Collector t-to-Emitter Current (A) IC, Collector-to-Emitter Current (A) 1000 100 T J = 150°C 100 T J = 150°C 10 10 1 T J = 25°C VGE = 15V 20µs PULSE WIDTH 0.0 1.0 2.0 3.0 4.0 5.0 1 TJ = 25°C VCC = 10V 5µs PULSE WIDTH 0.01 4 5 6 7 8 9 10 11 0.1 0.1 0.01 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC60F-PPbF 100 3.0 VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 90 80 70 60 50 40 30 20 10 0 25 50 75 100 V GE = 15V VGE = 15V 80µs PULSE WIDTH IC = 120A 2.0 IC = 60A IC = 30A 1.0 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C, Case Temperature (°C) TJ , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 ) thJC D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T J = P DM t1 / t 2 x Z thJC 0.1 +TC 1 Thermal Response (Z 0.001 0.00001 0.0001 0.001 0.01 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60F-PPbF 100000 VGE = 0V, f = 1 MHZ Cies = C + Cgc, C ge ce SHORTED Cres = C ce Coes = C + Cgc ce VGE , Gate-to-Emitter Voltage (V) 20 V CC = 400V IC = 40A 10000 15 Capacitance (pF) Cies 1000 10 Coes 100 5 Cres 10 0 100 200 300 400 500 0 0 50 100 150 200 250 300 VCE (V) QG, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.00 VCC = 480V VGE = 15V TJ = 25°C 7.00 I C = 60A 100 RG = 5.0 Ω VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 480V IC = 120A 6.00 10 IC = 60A 5.00 IC = 30A 4.00 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance (Ω ) T J, Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60F-PPbF 30.0 RG = 5.0Ω TJ = 150°C VGE = 15V VCC = 480V 20.0 1000 IC, Collector-to-Emitter Current (A) VGE = 20V T J = 125° Total Switching Losses (mJ) 100 SAFE OPERATING AREA 10.0 10 0.0 30 50 70 90 110 130 1 0.1 1 10 100 1000 IC, Collector Current (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC60F-PPbF L 50V 1000V VC * D.U.T. RL = 0 - 480V 480V 4 X IC@ 25°C c 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V D.U.T. VC Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V ™Ã 1000V d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5µs E off www.irf.com 7 IRG4PC60F-PPbF TO-247AC Package Outline TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04 8 www.irf.com