IRG4PC60U-P

PD - 94441 IRG4PC60U-P INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching and >200 kHz in resonant mode. • Application in UPS, Welding and High Current power supply. • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. • Solder plated version of industry standard TO-247AC package. C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.6V @VGE = 15V, IC = 40A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. • Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Maximum Reflow TemperatureW Max. 600 75 40 300 300 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) 230 (Time above 183°C should not exceed 100s) Units V A V mJ W °C °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (Typical Socket Mount) Junction-to-Ambient (PCB Mount, Steady State)V Weight Typ. ---0.24 ------6 (0.21) Max. 0.24 ---40 20 ---- Units °C/W g (oz) www.irf.com 1 04/26/02 IRG4PC60U-P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage T 17 ---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.28 ---- 1.7 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 1.9 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -12 gfe Forward Transconductance U 44 59 ---- ---ICES Zero Gate Voltage Collector Current ---- ------- ---IGES Gate-to-Emitter Leakage Current ---- ---V(BR)CES V(BR)ECS Max. Units Conditions ---V VGE = 0V, IC = 250µA ---V VGE = 0V, IC = 1.0A ---- V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 40A VGE = 15V ---IC = 75A See Fig.2, 5 V ---IC = 40A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE ≥ 100V, IC = 40A 250 µA VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 310 41 110 39 42 200 100 0.28 1.1 1.3 36 42 300 160 2.6 13 5860 370 75 Max. Units Conditions 320 IC = 40A 46 nC VCC = 480V See Fig. 8 120 VGE = 15V ------TJ = 25°C ns IC = 40A, VCC = 480V VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 10, 11, 13, 14 1.8 ---TJ = 150°C, ---IC = 40A, VCC = 480V ns ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, Rg = 5.0W. (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. V When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. W Refer to application note # 1023, "Surface Mounting of Larger Devices." 2 www.irf.com IRG4PC60U-P 60 Duty cycle : 50% Tj = 125°C Tsink = 90°C Ta = 55°C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 73W for Heatsink Mount Power Dissipation = 3.5W for typical PCB socket Mount 50 Load Current ( A ) 40 60% of rated voltage 30 20 Ideal diodes 10 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 IC, Collector-to-Emitter Current (A) IC , Collector t-to-Emitter Current (A) 100 T J = 150°C 100 T J = 150°C 10 T J = 25°C 10 1 T J = 25°C VGE = 15V 20µs PULSE WIDTH VCC = 10V 5µs PULSE WIDTH 1 4 5 6 7 8 9 10 11 0.1 0.0 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC60U-P 80 3.0 V GE = 15V VGE = 15V 80µs PULSE WIDTH Maximum DC Collector Current (A) 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VCE , Collector-to Emitter Voltage (V) IC = 80A 2.0 IC = 40A IC = 20A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature (°C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 ) thJC D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 Thermal Response (Z  SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T J = P DM 0.001 0.00001  t1/ t 2 x Z thJC 0.1 +T C 0.0001 0.001 0.01  P DM t1 t2 1 t 1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60U-P 10000 8000  Cies  V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc 20  Vcc = 480V V CC = 400V Ic = 40V IC = 40A 16 VGE, Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000 12 Coes 4000  8 Cres 2000  4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.00 VCC = 480V VGE = 15V TJ = 25°C I C = 40A 100 Ω RG = 5.0 VGE = 15V Total Switching Losses (mJ) 4.00 Total Switching Losses (mJ) VCC = 480V 10 IC = 80A 3.00 IC = 40A 1 IC = 20A 2.00 1.00 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance ( Ω ) T J, Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60U-P 8.0 1000 RG = 5.0Ω TJ = 150°C VGE = 15V VCC = 480V 6.0 5.0 4.0 3.0 2.0 1.0 0.0 20 IC , Collector-to-Emitter Current (A) 7.0 VGE = 20V T J = 125° Total Switching Losses (mJ) 100 SAFE OPERATING AREA 10 1 30 40 50 60 70 80 0.1 1 10 100 1000 IC , Collector Current (A) VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC60U-P L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4PC60U-P TO-247AC Package Outline Dimensions are shown in millimeters (inches) 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 14 .80 (.583 ) 14 .20 (.559 ) 4.30 (.1 70) 3.70 (.1 45) 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5.45 (.2 15 ) L O N G E R L E A D E D ( 2 0m m ) V E R S IO N A V A IL A B LE ( T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M C AS 2X 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) Solderable TO-247AC Part Marking Information E XA M P LE : TH IS IS A N IR F P E 3 0 W ITH A S S E M B L Y LO T C O DE 3A 1Q A IN TE R N A TIO N A L R E C TIFIE R LOG O ASSEMBLY LOT CODE PART NUMBER IR FP E 3 0 3A 1 Q 9 3 0 2 D A TE C O D E (Y YW W ) YY = YEAR W W W EEK Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02 8 www.irf.com