PD - 95568
IRG4PC60UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: Optimized for high operating frequencies up to 50 kHz in hard switching, >200 kHz in resonant mode. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. Lead-Free
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.6V
@VGE = 15V, IC = 40A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specified application conditions. Designed for best performance when used with IR Hexfred & IR Fred companion diodes.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 75 40 300 300 ± 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm)
Units
V A
V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
---0.24 ---6 (0.21)
Max.
0.24 ---40 ----
Units
°C/W g (oz)
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1
07/15/04
IRG4PC60UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ---Emitter-to-Collector Breakdown Voltage 17 ---∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.28 ---- 1.7 VCE(ON) Collector-to-Emitter Saturation Voltage ---- 1.9 ---- 1.6 VGE(th) Gate Threshold Voltage 3.0 ---∆V GE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -12 gfe Forward Transconductance
44 59 ---- ---ICES Zero Gate Voltage Collector Current ---- ------- ---IGES Gate-to-Emitter Leakage Current ---- ---V(BR)CES V(BR)ECS Max. Units Conditions ---V VGE = 0V, IC = 250µA ---V VGE = 0V, IC = 1.0A ---- V/°C VGE = 0V, IC = 1.0mA 2.0 IC = 40A VGE = 15V ---IC = 75A See Fig.2, 5 V ---IC = 40A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE ≥ 100V, IC = 40A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 310 41 110 39 42 200 100 0.28 1.1 1.3 36 42 300 160 2.6 13 5860 370 75 Max. Units Conditions 320 IC = 40A 46 nC VCC = 480V See Fig. 8 120 VGE = 15V ------TJ = 25°C ns IC = 40A, VCC = 480V VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 10, 11, 13, 14 1.8 ---TJ = 150°C, ---IC = 40A, VCC = 480V ns ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = TBD µH,
RG = 5.0W. (See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC60UPbF
80
Square wave: 60% of rated voltage
Triangular wave:
60
Load Current ( A )
Ideal diodes
Clamp voltage: 80% of rated
40
20
For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 73W
0.1 1 10 100
0
f , Frequency ( kHz )
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 1 - Typical Load Current vs. Frequency
1000
IC, Collector t-to-Emitter Current (A)
1000
IC, Collector-to-Emitter Current (A)
100
T J = 150°C
100 T J = 150°C 10 T J = 25°C
10
1
T J = 25°C VGE = 15V 20µs PULSE WIDTH
VCC = 10V 5µs PULSE WIDTH 1 4 5 6 7 8 9 10 11
0.1 0.0 1.0 2.0 3.0 4.0 5.0 VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4PC60UPbF
80
3.0
VCE , Collector-to Emitter Voltage (V)
V GE = 15V
Maximum DC Collector Current (A)
70 60 50 40 30 20 10 0 25 50 75 100 125 150
VGE = 15V 80µs PULSE WIDTH
IC = 80A
2.0
IC = 40A IC = 20A
1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T C, Case Temperature (°C)
T J , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
1
) thJC
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T J = P DM t1/ t 2 x Z thJC 0.1 +TC 1
Thermal Response (Z
0.001 0.00001
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4PC60UPbF
10000
20
8000
Cies
V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc
Vcc = 480V V CC = 400V Ic = 40V I C = 40A
16
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
6000
12
Coes
4000
8
Cres
2000
4
0 1 10 100
0 0 100 200 300 400
VCE , Collector-to-Emitter Voltage (V)
QG, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
5.00 VCC = 480V VGE = 15V TJ = 25°C I C = 40A
100 Ω RG = 5.0 VGE = 15V
Total Switching Losses (mJ)
4.00
Total Switching Losses (mJ)
VCC = 480V 10 IC = 80A
3.00
IC = 40A 1 IC = 20A
2.00
1.00 0 10 20 30 40 50
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
RG, Gate Resistance (Ω )
T J, Junction Temperature (°C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4PC60UPbF
8.0
1000
6.0 5.0 4.0 3.0 2.0 1.0 0.0 20
VCC = 480V
IC, Collector-to-Emitter Current (A)
7.0
Total Switching Losses (mJ)
RG = 5.0Ω TJ = 150°C VGE = 15V
VGE = 20V T J = 125°
100
SAFE OPERATING AREA
10
1
30
40
50
60
70
80
0.1
1
10
100
1000
IC, Collector Current (A)
VDS, Drain-to-Source Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4PC60UPbF
L 50V 1000V VC *
D.U.T.
RL = 0 - 480V
480V 4 X IC@ 25°C
c
480µF 960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L Driver* 50V D.U.T. VC
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
Ã
1000V
d
e
c d
90%
e
VC 90%
10%
t d(off)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d(on)
tr E on E ts = (Eon +Eoff )
tf t=5µs E off
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7
IRG4PC60UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30 WIT H ASS EMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H"
Note: "P" in assembly line position indicates "Lead-Free"
PART NUMBER INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE
IRFPE30
56 035H 57
DATE CODE YEAR 0 = 2000 WEEK 35 LINE H
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/04
8
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/