IRG4PF50WD

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C VCES = 900V G E VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A n-cha n ne l Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 900 51 28 204 204 16 204 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.64 0.83 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 IRG4PF50WD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltageƒ Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance „ Zero Gate Voltage Collector Current VFM IGES Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Min. 900 — — — — 3.0 — 26 — — — — — — Typ. — 0.295 2.25 2.74 2.12 — -13 39 — — — 2.5 2.1 — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 3.5mA 2.7 IC = 28A VGE = 15V — V IC = 60A See Fig. 2, 5 — IC = 28A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 50V, IC = 28A 500 µA VGE = 0V, VCE = 900V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 160 19 53 71 50 150 110 2.63 1.34 3.97 69 52 270 190 6.0 13 3300 200 45 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 240 IC = 28A 29 nC VCC = 400V See Fig. 8 80 VGE = 15V — TJ = 25°C — ns IC = 28A, VCC = 720V 220 VGE = 15V, RG = 5.0Ω 170 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 5.3 — TJ = 150°C, See Fig. 11, 18 — ns IC = 28A, VCC = 720V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 1838 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4PF50WD 40 F or b oth: LOAD CURRENT (A) 30 D uty c y c le : 50% T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified P ow er D is s ipation = 40 W S q u a re w a v e : 20 60% of rated voltage I 10 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) TJ = 25 ° C TJ = 150 ° C 100 I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C TJ = 25 °C 10 10 1 1 V GE = 15V 20µs PULSE WIDTH 10 1 5 6 7 V CC = 50V 5µs PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PF50WD 60 3.0 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) IC = 56 A 50 40 2.5 30 IC = 28 A 20 2.0 IC = 14 A 10 0 25 50 75 100 125 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TJ , Junction Temperature ° C) ( Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PF50WD 6000 5000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 28A 16 C, Capacitance (pF) 4000 Cies 12 3000 8 2000 C oes Cres 4 1000 0 1 10 100 0 0 40 80 120 160 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 6.0 100 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage RG = 5.0Ω VGE = 15V VCC = 720V Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE TJ 5.5 I C = 720V = 15V = 25 ° C = 28A 5.0 IC = 56 A 10 4.5 IC = 28 A IC = 14 A 4.0 3.5 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 ( RG , Gate Resistance Ω ) TJ , Junction Temperature ° C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PF50WD 16 Total Switching Losses (mJ) 12 8 I C , Collector Current (A) RG TJ VCC VGE = 5.0Ω = 150 ° C = 720V = 15V 1000 VGE = 20V T J = 125 oC 100 10 4 0 10 20 30 40 50 60 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) T J = 150°C 10 T J = 125°C T J = 25°C 1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PF50WD 300 40 VR = 20 0V T J = 125°C T J = 25°C 30 200 VR = 2 00V T J = 125 °C T J = 25°C I F = 16A I F = 8.0A I R R M - (A ) I F = 32A trr - (n s) 20 I F = 32A I F = 16A I F = 8.0A 100 10 0 100 di f /dt - (A /µ s) 1000 0 100 di f /d t - (A /µ s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200 V T J = 125°C T J = 25°C 900 VR = 20 0V T J = 12 5°C T J = 25 °C 600 I F = 16A di(rec )M /dt - (A /µ s ) I F = 32A Q R R - (nC ) 100 I F = 32 A I F =1 6A I F = 8 .0A I F = 8.0A 300 0 100 di f /d t - (A /µ s) 1000 10 100 1000 di f /dt - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PF50WD Same t y pe device as D .U.T. 80% of Vce 430µF D .U .T. 90% Vge VC 10% 90% t d(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5µs E on E ts = (Eon +Eoff ) Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = ∫ trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 ∫ E rec = ∫ t4 V d idIc dt Vd dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PF50WD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µ F 100 V Vc* D.U.T. R L= 0 - 720V 720V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PF50WD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-247AC 3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M -A5.5 0 (.2 17) -D- 15 .90 (.62 6 ) 15 .30 (.60 2 ) -B- 5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4 N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C . 2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1 2X 5.5 0 (.2 17) 4.5 0 (.1 77) 2 3 -C- LEAD 1234- A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R * 1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9) 4.3 0 (.1 70) 3.7 0 (.1 45) 0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) * 3X C AS 2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5) L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER 3X 1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M 2X 3 .40 (.13 3) 3 .00 (.11 8) CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P) D im en sio ns in M illim e ters a n d (Inche s) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 7/98 10 www.irf.com