PD -91776
IRG4PH20K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations
C
Short Circuit Rated UltraFast IGBT
VCES = 1200V
G E
VCE(on) typ. = 3.17V
@VGE = 15V, IC = 5.0A
n-channel
Benefits
• As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
1200 11 5.0 22 22 10 ±20 130 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m)
Units
V A
µs V mJ W
°C
Thermal Resistance
Parameter
RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
––– 0.24 ––– 6 (0.21)
Max.
2.1 ––– 40 –––
Units
°C/W g (oz)
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1
6/25/98
IRG4PH20K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 — Emitter-to-Collector Breakdown Voltage 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.13 — 3.17 VCE(ON) Collector-to-Emitter Saturation Voltage — 4.04 — 2.84 VGE(th) Gate Threshold Voltage 3.5 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -10 gfe Forward Transconductance
2.3 3.5 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 2.5mA 4.3 IC = 5.0A VGE = 15V — IC = 11A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA — S VCE = 100 V, IC = 5.0A 250 VGE = 0V, VCE = 1200V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 28 43 IC = 5.0A 4.4 6.6 nC VCC = 400V See Fig.8 12 18 VGE = 15V 23 — 26 — TJ = 25°C ns 93 140 IC =5.0A, VCC = 960V 270 400 VGE = 15V, RG = 50Ω 0.45 — Energy losses include "tail" 0.44 — mJ See Fig. 9,10,14 0.89 1.2 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 50Ω 23 — TJ = 150°C, 28 — IC = 5.0A, VCC = 960 ns 100 — VGE = 15V, RG = 50Ω 620 — Energy losses include "tail" 1.7 — mJ See Fig. 10,11,14 13 — nH Measured 5mm from package 435 — VGE = 0V 44 — pF VCC = 30V See Fig. 7 8.3 — ƒ = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b ) (See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =50Ω,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4PH20K
16
F or both:
Triangular wave:
Load Current ( A )
12
Duty cycle: 50% TJ = 125˚ C T sink = 90˚ C Gate drive as specified
Power Dissipation = 15W Clamp voltage: 80% of rated
Sq uare wav e:
8
60% of rated voltage
4
Ideal diodes
0 0.1 1 10
)
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
10
TJ = 150 °C
I C , Collector-to-Emitter Current (A)
10
TJ = 150 ° C
1
TJ = 25 ° C
TJ = 25 ° C V CC = 50V 5µs PULSE WIDTH
6 8 10 12 14
0.1 1
V GE = 15V 20µs PULSE WIDTH
10
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4PH20K
12
5.0
9
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
VGE = 15V 80 us PULSE WIDTH
4.0
IC = 10 A
6
3.0
IC =
5A
3
IC = 2.5 A
0 25 50 75 100 125 150
2.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature (° C)
TJ , Junction Temperature ° C) (
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T = PDM x Z thJC + TC J 0.0001 0.001 0.01 0.1 1 t2
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH20K
20
800
VGE , Gate-to-Emitter Voltage (V)
VGE = Cies = Cres = Coes =
0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc
VCC = 400V I C = 11A
16
C, Capacitance (pF)
600
Cies
400
12
8
200
Coes Cres
4
0 1 10 100
0 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.95
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC V GE TJ 0.90 I C
= 960V = 15V = 25 ° C = 11A
10
Ω RG = 50Ohm VGE = 15V VCC = 960V
IC = 10 A
0.85
IC =
1
5A
IC = 2.5 A
0.80
0.75
0.70 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG R,GGate Resistance ( Ω ) , Gate Resistance (Ohm)
TJ , Junction Temperature ° C ) (
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4PH20K
5.0
Total Switching Losses (mJ)
3.0
I C , Collector Current (A)
RG TJ VCC 4.0 VGE
Ω = 50Ohm = 150° C = 960V = 15V
100
VGE = 20V T J = 125 o C
10
2.0
1.0
SAFE OPERATING AREA
0.0 0 2 4 6 8 10 1 1 10 100 1000 10000
I C , Collector Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6
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IRG4PH20K
L 50V 100 0V VC *
D .U .T.
RL = 0 - 960V 960V 4 X IC@25°C
480µF 960V
* D river sam e type as D .U .T .; Vc = 80% of Vce(m ax) * N ote: D ue to the 50V pow er supply, pulse w idth and inductor w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 960V
90%
10% 90%
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d (o n )
tr E on E ts = (E o n +E o ff )
tf t =5µs E o ff
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IRG4PH20K
Case Outline and Dimensions — TO-247AC
3.6 5 (.14 3) 3.5 5 (.14 0) 0.2 5 (.0 1 0) M D B M
-A5.5 0 (.2 17)
-D-
15 .90 (.62 6 ) 15 .30 (.60 2 ) -B-
5.3 0 (.20 9) 4.7 0 (.18 5) 2.5 0 (.0 89) 1.5 0 (.0 59) 4
N O TE S : 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 1 4 .5 M , 1 982 . 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -24 7A C .
2 0 .3 0 (.80 0) 1 9 .7 0 (.77 5) 1
2X
5.5 0 (.2 17) 4.5 0 (.1 77)
2
3
-C-
LEAD 1234-
A S S IG N M E N T S GATE CO LLECT O R E M IT T E R CO LLECT O R
*
1 4 .8 0 (.5 8 3) 1 4 .2 0 (.5 5 9)
4.3 0 (.1 70) 3.7 0 (.1 45)
0 .80 (.03 1 ) 0 .40 (.01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 )
*
3X C AS
2 .40 (.09 4 ) 2 .00 (.07 9 ) 2X 5.4 5 (.21 5)
L O N G E R L E A D E D (20m m ) V E R S IO N A V A ILA B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER
3X
1.4 0 (.0 56) 1.0 0 (.0 39) 0.2 5 (.0 10) M
2X
3 .40 (.13 3) 3 .00 (.11 8)
CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)
D im en sio ns in M illim e ters a n d (Inche s)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.6/98
8
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