IRG4PH30

PD -91580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBT's offer highest power density motor controls possible • This part replaces the IRGPH30K and IRGPH30M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 20 10 40 40 10 ±20 121 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units V A µs V mJ W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. ––– 0.24 ––– 6 (0.21) Max. 1.2 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 2/7/2000 IRG4PH30K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 1200 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.19 — V/°C — 3.10 4.2 VCE(ON) Collector-to-Emitter Saturation Voltage — 3.90 — V — 3.01 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 — mV/°C gfe Forward Transconductance U 4.3 6.5 — S — — 250 ICES Zero Gate Voltage Collector Current µA — — 2.0 — — 2000 IGES Gate-to-Emitter Leakage Current — — ±100 nA V(BR)CES V(BR)ECS Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0A VGE = 0V, IC = 2.0mA IC = 10A VGE = 15V IC = 20A See Fig.2, 5 IC = 10A , TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100 V, IC = 10A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 10V, TJ = 25°C VGE = 0V, VCE = 1200V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 — — — — — — — — — Typ. Max. Units Conditions 53 80 IC = 10A 9.0 14 nC VCC = 400V See Fig.8 21 32 VGE = 15V 28 — 23 — TJ = 25°C ns 200 300 IC =10A, VCC = 960V 110 170 VGE = 15V, RG = 23 Ω 0.64 — Energy losses include "tail" 0.92 — mJ See Fig. 9,10,14 1.56 2.4 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 23 Ω 27 — TJ = 150°C, 26 — IC = 10A, VCC = 960V ns 310 — VGE = 15V, RG = 23 Ω 330 — Energy losses include "tail" 3.18 — mJ See Fig. 10,11,14 13 — nH Measured 5mm from package 800 — VGE = 0V 60 — pF VCC = 30V See Fig. 7 14 — ƒ = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Repetitive rating; pulse width limited by maximum junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG =23Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. 2 www.irf.com IRG4PH30K 30 F o r bo t h : 25 Tria n gu lar w ave : Load Current ( A ) 20 D u ty c yc le : 50% TJ = 1 2 5 ° C Ts in k = 9 0 ° C G a te d rive as sp ec ified Po wer D issipat io n = 24 4 0W C la m p v o lta g e : 8 0 % o f rate d S q u a re wa ve : 15 6 0 % o f ra te d vo l t a g e 10 5 Id e a l d io de s 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 10 10 TJ = 150 °C  TJ = 25 °C  V = 15V  20µs PULSE WIDTH GE 1 10 TJ = 150 ° C  TJ = 25 °C  V = 50V  5µs PULSE WIDTH CC 6 8 10 12 14 1 1 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH30K 20 5.0 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A) 4.5 15  IC = 20 A 4.0 10 3.5  IC = 10 A 3.0 5  IC = 5 A 2.5 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH30K 1200 1000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 800 Cies   VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 10A 15 600 10 400 200 C oes C res 5 0 1 10 100 0 0 10 20 30 40 50 60 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.0 2.5 Total Switching Losses (mJ) Total Switching Losses (mJ)  V CC = 960V V GE = 15V TJ = 25 °C I C = 10A 100  23 Ω RG = Ohm VGE = 15V VCC = 960V 10  IC = 20 A  IC = 10 A  IC = 5 A 2.0 1 1.5 1.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG Gate Resistance (Ohm) RG , ,Gate Resistance ( Ω ) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH30K 10.0 Total Switching Losses (mJ) 6.0 I C , Collector Current (A) RG TJ VCC 8.0 VGE  23 Ω = Ohm = 150 ° C = 960V = 15V 100  VGE = 20V T J = 125 oC 10 4.0 2.0 0.0 0 5 10 15 20 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PH30K L 50V 1 00 0V VC * 0 - 960V D .U .T. RL = 960V 4 X I C@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 960V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRG4PH30K Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S ( IN C H E S ) . 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) * 3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X L O N G E R L E A D E D ( 2 0m m ) V E R S IO N A V A IL A B LE ( T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 8 www.irf.com