IRG4PH30KD

PD- 91579A IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces IRGPH30MD2 products • For hints see design tip 97003 TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 1200 20 10 40 40 10 40 10 ± 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 1.2 2.5 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 2/7/2000 IRG4PH30KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 — Temperature Coeff. of Breakdown Voltage — 0.19 Collector-to-Emitter Saturation Voltage — 3.10 — 3.90 — 3.01 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -12 Forward Transconductance T 4.3 6.5 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 3.4 — 3.3 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 4.2 IC = 10A VGE = 15V — V IC = 20A See Fig. 2, 5 — IC = 10A, TJ = 150°C 6.0 VCE = VGE , IC = 250µA — mV/°C VCE = VGE , IC = 250µA — S VCE = 100V, IC = 10A 250 µA VGE = 0V, VCE = 1200V 3500 VGE = 0V, VCE = 1200V, TJ = 150°C 3.8 V IC = 10A See Fig. 13 3.7 IC = 10A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 53 80 IC = 10A 9.0 14 nC VCC = 400V See Fig.8 21 32 VGE = 15V 39 — 84 — TJ = 25°C ns 220 340 IC = 10A, VCC = 800V 90 140 VGE = 15V, R G = 23Ω 0.95 — Energy losses include "tail" 1.15 — mJ and diode reverse recovery 2.10 2.6 See Fig. 9,10,18 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω 42 — TJ = 150°C, See Fig. 10,11,18 79 — IC = 10A, VCC = 800V ns 540 — VGE = 15V, R G = 23Ω, 97 — Energy losses include "tail" 3.5 — mJ and diode reverse recovery 13 — nH Measured 5mm from package 800 — VGE = 0V 60 — pF VCC = 30V See Fig. 7 14 — ƒ = 1.0MHz 50 76 ns TJ = 25°C See Fig. 72 110 TJ = 125°C 14 I F = 10A 4.4 7.0 A TJ = 25°C See Fig. 5.9 8.8 TJ = 125°C 15 VR = 200V 130 200 nC TJ = 25°C See Fig. 250 380 TJ = 125°C 16 di/dt = 200A/µs 210 — A/µs TJ = 25°C See Fig. 180 — TJ = 125°C 17 2 www.irf.com IRG4PH30KD 15 F o r b o th : LOAD CURRENT (A) 10 S q u a re w a v e : 6 0% of rate d volta ge I D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 24 W 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 10 10 TJ = 150 °C  TJ = 25 °C  V = 15V  20µs PULSE WIDTH GE 1 10 TJ = 150 ° C  TJ = 25 °C  V = 50V  5µs PULSE WIDTH CC 6 8 10 12 14 1 1 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH30KD 20 5.0 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE Maximum DC Collector Current(A) 4.5 15  IC = 20 A 4.0 10 3.5  IC = 10 A 3.0 5  IC = 5 A 2.5 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH30KD 1200 1000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 800 Cies   VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 10A 15 600 10 400 200 C oes C res 5 0 1 10 100 0 0 10 20 30 40 50 60 VCE , Collector-to-Emitter Voltage (V) Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2.4 Total Switching Losses (mJ) 2.3 Total Switching Losses (mJ)  V CC = 800V V GE = 15V TJ = 25 ° C I C = 10A 100  RG = Ohm G = 23Ω VGE = 15V VCC = 800V 10  IC = 20 A  IC = 10 A  IC = 5 A 2.2 1 2.1 2.0 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R, ate Resistance ( Ω RG GG, Gate Resistance )(Ohm) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH30KD 8.0 Total Switching Losses (mJ) 6.0 4.0 I C , Collector Current (A) 10 15 20  RG = =3Ω G 2 Ohm T J = 150 °C VCC = 800V VGE = 15V 100  VGE = 20V T J = 125 oC 10 2.0 0.0 0 5 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 T J = 150 ° C T J = 125 ° C T = 25 ° C J 1 0.0 2.0 4.0 6.0 8.0 F orward V olta g e D rop - V F M ( V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PH30KD 100 100 I F = 20A I F = 10A I F = 5.0A 80 V R = 20 0V T J = 1 2 5 °C T J = 2 5 °C I F = 20A IF = 10A IF = 5.0A trr- ( ns) IIRRM - ( A ) VR = 2 00 V TJ = 1 2 5 ° C TJ = 2 5 ° C 1000 60 10 40 20 100 di f /dt - ( A/ µ s ) 1 100 1000 di f /dt - ( A/ µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 VR = 20 0V TJ = 1 2 5 ° C TJ = 2 5 ° C 800 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 V R = 20 0V T J = 12 5 ° C T J = 25 ° C I F = 20A IF = 10A di(rec)M/dt - ( A/µs) I F = 20A I F = 10A I F = 5.0A 600 I F = 5.0A 1000 QIRR - ( nC ) 400 100 200 0 100 di f /dt - ( A/ µ s ) 1000 10 100 1000 di f /dt - ( A/ µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PH30KD 90% Vge +Vge Same ty pe device as D .U.T. V ce Ic 80% of Vce 430µF D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf E o ff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ icdt trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = t1 ∫ Vcicdt t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PH30KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µF 100V Vc* D.U.T. RL= 0 - 480V 960V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PH30KD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 23Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) -A5 .5 0 (.2 17 ) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- M DBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4 NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5.5 0 (.2 1 7) 4.5 0 (.1 7 7) -C- LEAD 1234- A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 3X C AS 2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER 3X 1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC ( T O -3P ) D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 10 www.irf.com