IRG4PH40UD2-E

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing • Induction cooking systems • Microwave Ovens • Resonant Circuits TO-247AD Parameter Max. 1200 41 21 82 82 10 40 ±20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf in (1.1N m) Absolute Maximum Ratings Units V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current Ù d Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 screw V W °C y y Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.77 2.5 ––– 40 ––– Units °C/W g (oz.) www.irf.com 1 9/17/03 IRG4PH40UD2-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage eà 1200 18 — — — — 3.0 — 16 — — — — — Min. Typ. Max. Units — — 0.43 2.43 2.97 2.47 — -11 24 — — 3.4 3.3 — Conditions VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current f — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1mA IC = 21A VGE = 15V 3.1 V IC = 41A — See Fig.2, 5 IC = 21A, TJ = 150°C — VCE = VGE, IC = 250µA 6.0 — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 21A 250 µA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C 5000 3.8 V IF = 10A See Fig.13 IF = 10A, TJ = 150°C 3.7 ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf ETS LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — — — — — — — — 100 18 34 22 26 100 200 1950 1710 3660 21 25 220 380 6220 13 2100 99 12 50 72 4.4 5.9 130 250 210 180 150 24 50 — — 140 300 — — 4490 — — — — — — — — — 76 110 7.0 8.8 200 380 — — nC Conditions IC = 21A VCC = 400V VGE = 15V See Fig.8 ns µJ IC = 21A, VCC = 800V VGE = 15V, RG = 10Ω Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 11, 18 TJ = 150°C, See Fig. 9, 10, 11, 18 IC = 21A, VCC = 800V VGE = 15V, RG = 10Ω Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V, See Fig.7 f = 1.0MHz TJ=25°C TJ=125°C See Fig 14 See Fig 15 See Fig 16 See Fig 17 di/dt = 200A/µs VR = 200V IF = 8.0A ns µJ nH pF ns A nC TJ=25°C TJ=125°C TJ=25°C TJ=125°C A/µs TJ=25°C TJ=125°C 2 www.irf.com IRG4PH40UD2-E 50 45 40 Square wave: 60% of rated voltage I Load Current ( A ) 35 30 25 20 15 10 5 0 0.1 1 10 Ideal diodes For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 35W 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) TJ = 150 oC 10 10 TJ = 150 o C TJ = 25 oC TJ = 25 o C 1 1 V GE = 15V 20µs PULSE WIDTH 10 1 5 6 7 V CC = 50V 5µs PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH40UD2-E 50 4.0 40 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) IC = 42 A 3.0 30 IC = 21 A IC =10.5 A 2.0 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( ° C) TTJ Junction Temperature ( °C ° C) J , , Junction Temperature ( ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH40UD2-E 4000 3500 3000 VGE, Gate-to-Emitter Voltage (V) VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V IC = 21A 16 Capacitance (pF) 2500 2000 1500 Cies 12 8 Coes 1000 500 0 1 10 4 Cres 0 0 20 40 60 80 100 120 VCE, Collector-toEmitter-Voltage(V) QG, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5 4.8 VCE = 800V VGE = 15V TJ = 25°C I C = 21A 100 R G = 10 Ω VGE = 15V VCC = 800V 4.6 4.4 4.2 4 3.8 3.6 0 Total Switching Losses (mJ) Total Swiching Losses (mJ) I C = 42A 10 I C = 21A I C = 10.5A 1 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance (Ω) T J, Junction Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH40UD2-E 16 R G = 10Ω 14 TJ = 150°C VCE= 800V VGE = 15V 1000 12 10 8 6 4 2 0 I C , Collector-to-Emitter Current (A) VGE = 20V T J = 125 oC Total Swiching Losses (mJ) 100 10 SAFE OPERATING AREA 1 10 20 30 40 50 1 10 100 1000 10000 IC, Collecto-to-Emitter (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PH40UD2-E Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PH40UD2-E 90% Vge Same type device as D.U.T. +Vge Vce 80% of Vce 430µF D.U.T. Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18a - Test Circuit for Measurement of ∫ Vce Ic dt t1+5µS Vce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = ∫ Ic dt trr id dt tx Vcc tx 10% Vcc Vce 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vpk Irr Vcc DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 ∫ t4 Erec = Vd idIc dt Vd dt t3 ∫ t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PH40UD2-E Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µF 100V Vc* D.U.T. RL= 0 - 800V 800V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PH40UD2-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) Notes : This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBL Y LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS SEMBLY LINE "H" TO-247AD Part Marking Information INTERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 Notes : This part marking information applies to devices produced before 02/26/2001 or for parts manufactured in GB. EXAMPLE: THIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 3A1Q DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H INT ERNAT IONAL RECT IFIER LOGO AS S E MBLY LOT CODE PART NUMBER IRFPE30 3A1Q 9302 DAT E CODE (YYWW) YY = YEAR WW = WEEK Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. TO-247AD package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/03 10 www.irf.com