IRG4PH50

PD 91573A IRG4PH50UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-cha nn el Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 45 24 180 180 16 180 ± 20 200 78 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbf•in (1.1N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.64 0.83 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 7/7/2000 IRG4PH50UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown VoltageS 1200 — — V Temperature Coeff. of Breakdown Voltage — 1.20 — V/°C Collector-to-Emitter Saturation Voltage — 2.56 3.5 — 2.78 3.7 — 3.20 — V — 2.54 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -13 — mV/°C Forward Transconductance T 23 35 — S Zero Gate Voltage Collector Current — — 250 µA — — 6500 Diode Forward Voltage Drop — 2.5 3.5 V — 2.1 3.0 Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 20A VGE = 15V IC = 24A See Fig. 2, 5 IC = 45A IC = 24A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 24A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 16A See Fig. 13 IC = 16A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 160 27 53 47 24 110 180 2.10 1.50 3.60 46 27 240 330 6.38 13 3600 160 31 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 80 VGE = 15V — TJ = 25°C — ns IC = 24A, VCC = 800V 170 VGE = 15V, RG = 5.0Ω 260 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 4.6 — TJ = 150°C, See Fig. 11, 18 — ns IC = 24A, VCC = 800V — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 135 ns TJ = 25°C See Fig. 245 TJ = 125°C 14 IF = 16A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 675 nC TJ = 25°C See Fig. 16 di/dt = 200A/µs 1838 TJ = 125°C — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4PH50UD 30 25 F o r b o th : LOAD CURRENT (A) 20 S q u a re w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W 6 0% of rate d volta ge I 15 10 5 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) 100 I C, Collector-to-Emitter Current (A) 100 TJ = 150 o C  TJ = 150 o C  10 10 TJ =  25 o C V = 15V  20µs PULSE WIDTH GE 1 10 TJ = 25 o C  V = 50V  5µs PULSE WIDTH CC 5 6 7 8 9 10 11 12 1 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PH50UD 50 4.0 40 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  IC = 48 A Maximum DC Collector Current(A) 3.5 30  IC = 24 A 3.0 20  IC = 12 A 2.5 10 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature ( ° C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PH50UD 7000 VGE , Gate-to-Emitter Voltage (V) 6000  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 24A 16 C, Capacitance (pF) 5000 Cies  4000 12 3000 8 2000 C oes C res 4 1000 0 1 10 100 0 0 40 80 120 160 200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 5.00 Total Switching Losses ( mJ) Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 25A 4.60 I C = 24A  100  5.0Ω RG = Ohm VGE = 15V VCC = 800V 4.20  IC = 48 A 10  IC = 24 A  IC = 12 A 3.80 3.40 3.00 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) Ω TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PH50UD 15 9 6 I C , Collector-to-Emitter Current (A) 20 30 40 50 Total Switching Losses (mJ) RG TJ VCC 12 VGE  = Ohm 5.0 Ω = 150 °C = 480V = 15V 1000  VGE = 20V T J = 125 oC 100 10 3 0 0 10 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 100 T J = 150 °C 10 T J = 125 °C T J = 25 ° C 1 0.0 2.0 4.0 6.0 8.0 F orward V olta g e D rop - V F M ( V ) Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PH50UD 300 40 VR = 200V T J = 125 ° C T J = 25 ° C 30 200 VR = 200 V T J = 125 ° C T J = 25 ° C I F = 1 6A I F = 8 .0 A I R R M - (A ) trr - (ns) IF = 3 2 A 20 I F = 32A I F = 16 A I F = 8 .0A 100 10 0 100 d i f /dt - ( A / µ s ) 1000 0 100 di f /dt - ( A / µ s ) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1200 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V T J = 125 ° C T J = 25 ° C 900 VR = 200V T J = 125 ° C T J = 25 ° C 600 I F = 1 6A di(rec)M /dt - (A /µ s) I F = 32 A Q R R - (nC ) 100 I F = 32 A I F =1 6A I F = 8 .0 A I F = 8.0A 300 0 100 di f /dt - ( A / µ s ) 1000 10 100 1000 di f /d t - (A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PH50UD Same ty pe device as D .U.T. 90% 80% of Vce 430µF D .U .T. Vge VC 90% 10% td(off) 10% IC 5% tr t d(on) Eon E ts = (Eon +Eoff ) tf t=5µs Eoff Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = t1 ∫ Vd Ic dt t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PH50UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µF 100V Vc* D.U.T. RL= 0 - 800V 800V 4 X I C @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PH50UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 ( .0 1 0 ) -A5 .5 0 (.2 17 ) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- M DBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2.5 0 ( .0 8 9) 1.5 0 ( .0 5 9) 4 NOTE S: 1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 98 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5.5 0 (.2 1 7) 4.5 0 (.1 7 7) -C- LEAD 1234- A S S IG N M E N T S GAT E COLLECTO R E M IT T E R COLLECTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) * 3X C AS 2 .4 0 (.0 9 4 ) 2 .0 0 (.0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X LO N G E R LE A D E D (2 0m m ) V E R S IO N A V A IL A B L E (T O -2 47 A D ) T O O R D E R A D D "-E " S U F F IX TO PAR T NUM BER 3X 1 .4 0 ( .0 56 ) 1 .0 0 ( .0 39 ) 0.2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC ( T O -3P ) D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 7/00 10 www.irf.com