IRG4PSC71UD

PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations • IGBT co-packaged with HEXFRED ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge configurations • Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247 • Creepage distance increased to 5.35mm C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.67V @VGE = 15V, IC = 60A n-cha n ne l Benefits • Generation 4 IGBT's offer highest efficiencies available • Maximum power density, twice the power handling of TO-247, less space than TO-264 • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs • Cost and space saving in designs that require multiple, paralleled IGBTs SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 85… 60 200 200 60 350 ± 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance\ Mechanical Parameter RθJC RθJC RθCS RθJA Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. ––– ––– ––– ––– 20.0(2.0) ––– Typ. ––– ––– 0.24 ––– ––– 6 (0.21) Max. 0.36 0.69 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) www.irf.com 1 5/12/99 IRG4PSC71UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltageƒ 600 ––– ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.39 VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.67 ––– 1.95 ––– 1.71 VGE(th) Gate Threshold Voltage 3.0 ––– ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 gfe Forward Transconductance „ 47 70 ICES Zero Gate Voltage Collector Current ––– ––– ––– ––– VFM Diode Forward Voltage Drop ––– 1.4 ––– 1.3 IGES Gate-to-Emitter Leakage Current ––– ––– V(BR)CES Max. Units Conditions ––– V VGE = 0V, IC = 250µA ––– V/°C VGE = 0V, IC = 10mA 2.0 IC = 60A VGE = 15V ––– IC = 100A See Fig. 2, 5 V ––– IC = 60A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.5mA ––– S VCE = 50V, IC = 60A 500 µA VGE = 0V, VCE = 600V 13 mA VGE = 0V, VCE = 600V, TJ = 150°C 1.7 IC = 60A See Fig. 13 V ––– IC = 60A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt During tb Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. 340 44 160 90 94 245 110 3.26 2.27 5.53 91 88 353 150 7.1 13 7500 720 93 82 140 8.2 13 364 1084 328 266 Max. Units Conditions 520 IC = 60A 66 nC VCC = 400V See Fig. 8 240 VGE = 15V ––– TJ = 25°C ––– ns IC = 60A, VCC = 480V 368 VGE = 15V, RG = 5.0Ω 167 Energy losses include "tail" and ––– diode reverse recovery. ––– mJ See Fig. 9, 10, 11, 18 7.2 ––– TJ = 150°C, See Fig. 9, 10, 11, 18 ––– ns IC = 60A, VCC = 480V ––– VGE = 15V, RG = 5.0Ω ––– Energy losses include "tail" and ––– mJ diode reverse recovery. ––– nH Measured 5mm from package ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz 120 TJ = 25°C See Fig. ns 210 TJ = 125°C 14 IF = 60A 12 TJ = 25°C See Fig. A 20 TJ = 125°C 15 VR = 200V 546 TJ = 25°C See Fig. nC 1625 TJ = 125°C 16 di/dt = 200A/µs ––– TJ = 25°C See Fig. A/µs ––– TJ = 125°C 17 2 www.irf.com IRG4PSC71UD 80 F or b oth: LOAD CURRENT (A) 60 D uty c y c le : 50 % T J = 12 5° C T sink = 90 °C G a te d riv e a s s pe c ified P ow er D is s ipation = 58 W S q u a re w a v e : 40 60% of rated voltage I 20 Id e a l d io d es 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector Current (A) Ic , Collector-to-Emitter Current (A) TJ = 25 ° C TJ = 150 ° C I C , Collector-to-Emitter Current (A) TJ = 150 ° C 100 100 TJ = 25 ° C 10 10 1 1.0 V GE = 15V 80µs PULSE WIDTH 1.5 2.0 2.5 3.0 3.5 1 5 6 7 V CC = 50V 5µs PULSE WIDTH 8 9 10 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSC71UD 100 3.0 L IM ITE D B Y P A C K A G E Maximum DC Collector Current (A) 80 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 120 A 60 2.0 40 IC = 60 A IC = 30 A 20 V GE = 15V 0 25 50 75 100 125 A 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C a s e T e m p e ra tu re ( °C ) TJ , Junction Temperature (° C) Fig. 4 - Maximum Collector Current vs. Temperature Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 P DM S IN G LE P U LS E (TH E R M A L R E S P O N S E ) t1 t2 Notes: 1. Duty factor D = t 1 / t2 0.01 0.0001 2. Peak TJ = PDM x Z thJC + TC A 100 0.001 0.01 0.1 1 10 t 1 , R e cta n g u la r P u ls e D u ra tio n ( s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSC71UD 14000 12000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 60A 16 C, Capacitance (pF) 10000 Cies 8000 12 6000 Coes 4000 8 2000 Cres 4 0 1 10 100 0 0 100 200 300 400 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 12.0 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 100 10.0 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC V GE 11.0 TJ IC = 480V = 15V = 25 ° C = 60A RG = 5.0Ω 5.0Ohm VGE = 15V VCC = 480V IC = 120 A 9.0 10 8.0 IC = 60 A 7.0 IC = 30 A 6.0 5.0 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGR, Gate Resistance ( Ω ) G, Gate Resistance TJ , Junction Temperature ° C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4PSC71UD 25 Total Switching Losses (mJ) 15 10 I C , Collector Current (A) RG TJ VCC 20 VGE Ω = 5.0Ohm = 150 ° C = 480V = 15V 1000 VGE = 20V T J = 125 o C 100 10 5 0 20 40 60 80 100 120 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 1000 Instantaneous forward current - IF (A) 100 10 TJ = 1 5 0 °C TJ = 1 2 5 °C TJ = 2 5 °C 1 0.0 1.0 2.0 3.0 F o r w a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PSC71UD 200 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C 160 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C trr- (nC) 120 Irr- ( A) 10 80 I F = 30A I F = 60A I F = 120A 40 I F = 30A I F = 60A I F = 120A 1000 1 100 0 100 d i f /d t - (A /µ s) 1000 d i f /d t - (A /µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 4000 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V T J = 1 2 5 °C TJ = 2 5 °C 3000 VR = 20 0 V T J = 1 2 5 °C T J = 2 5 °C di (rec) M/dt- (A /µs) Qrr- (nC) I F = 3 0A I F = 6 0A I F = 1 20 A 2000 1000 I F = 120A I F = 60A I F = 30A 1000 0 100 d i f /d t - ( A / µ s ) 1000 100 100 1000 d i f /d t - ( A / µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PSC71UD Same t y pe device as D .U.T. 90% V g e +V g e V ce 80% of Vce 430µF D .U .T. Ic 10% V ce Ic 5% Ic td (off) tf 90% Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E off = ∫ Vce Ic dt t1+5µ S V ce ic dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g +V g trr Ic Q rr = ∫ trr id dt Ic dt tx tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic 10% Irr Vcc V pk Irr Vcc D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4 ∫ E rec = ∫ Vc Ic dt t4 V d id dt t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PSC71UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 600 0µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PSC71UD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1% „ Pulse width 5.0µs, single shot …Current limited by the package, (Die current = 100A) Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 10 www.irf.com