IRG4PSH71KD

PD - 91688A PRELIMINARY IRG4PSH71KD Short Circuit Rated UltraFast IGBT C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for motorcontrol • Minimum switching losses combined with low conduction losses • Tightest parameter distribution • IGBT co-packaged with ultrafast soft recovery antiparallel diode • Creepage distance increased to 5.35mm VCES = 1200V G E VCE(on) typ. = 2.97V @VGE = 15V, IC = 42A n-ch an nel Benefits • Highest current rating copack IGBT • Maximum power density, twice the power handling of the TO-247, less space than TO-264 • HEXFREDTM diode optimized for operation with IGBT, to minimize EMI, noise and switching losses SUPER - 247 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1200 78 42 156 156 42 156 10 ± 20 350 140 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A µs V W °C Thermal Resistance\ Mechanical Parameter RθJC RθJC RθCS RθJA Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Min. ––– ––– ––– ––– 20.0(2.0) ––– Typ. ––– ––– 0.24 ––– ––– 6 (0.21) Max. 0.36 0.69 ––– 38 ––– ––– Units °C/W N (kgf) g (oz) www.irf.com 1 5/11/99 IRG4PSH71KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltageƒ 1200 — — V Temperature Coeff. of Breakdown Voltage — 1.1 — V/°C Collector-to-Emitter Saturation Voltage — 2.97 3.9 — 3.44 — V — 2.60 — Gate Threshold Voltage 3.0 — 6.0 Temperature Coeff. of Threshold Voltage — -12 — mV/°C Forward Transconductance „ 25 38 — S Zero Gate Voltage Collector Current — — 500 µA — — 10 mA Diode Forward Voltage Drop — 2.5 3.7 V — 2.4 — Gate-to-Emitter Leakage Current — — ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 10mA IC = 42A VGE = 15V See Fig. 2, 5 IC = 78A IC = 42A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 1.5mA VCE = 50V, IC = 42A VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IC = 42A See Fig. 13 IC = 42A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 410 610 IC = 42A 47 70 nC VCC = 400V See Fig.8 145 220 VGE = 15V 67 — 84 — TJ = 25°C ns 230 350 IC = 42A, VCC = 800V 130 190 VGE = 15V, RG = 5.0Ω 5.68 — Energy losses include "tail" 3.23 — mJ and diode reverse recovery 8.90 11.6 See Fig. 9,10,18 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω 65 — TJ = 150°C, See Fig. 11,18 87 — IC = 42A, VCC = 800V ns 370 — VGE = 15V, RG = 5.0Ω 290 — Energy losses include "tail" 13.7 — mJ and diode reverse recovery 13 — nH Measured 5mm from package 5770 — VGE = 0V 400 — pF VCC = 30V See Fig. 7 100 — ƒ = 1.0MHz 107 160 ns TJ = 25°C See Fig. 160 240 TJ = 125°C 14 IF = 42A 10 15 A TJ = 25°C See Fig. 16 24 TJ = 125°C 15 VR = 200V 680 1020 nC TJ = 25°C See Fig. 1400 2100 TJ = 125°C 16 di/dt = 200A/µs 250 — A/µs TJ = 25°C See Fig. 320 — TJ = 125°C 17 2 www.irf.com IRG4PSH71KD 40 F o r b o th : LOAD CURRENT (A) 30 D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 58 W S q u a re w a v e : 20 6 0% of rate d volta ge I 10 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 Ic , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 °C I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 11 1 1.0 V GE = 15V 80µs PULSE WIDTH 2.0 3.0 4.0 5.0 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4PSH71KD 80 5.0 60 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A) 4.0 I C = 84 A 40 3.0 I C = 42 A I C = 21 A 20 0 25 50 75 100 125 150 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (ZthJC) D = 0 .50 0.1 0 .20 0 .1 0 0.05 0.0 2 0.01 P DM S IN G L E PU L SE (T HE R M A L R ES PO N SE ) t 1 t2 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.0001 A 100 0.001 0.01 0.1 1 10 t 1 , R e ctan g ular Pulse D uratio n ( sec ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PSH71KD 10000 8000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 42A C, Capacitance (pF) 15 6000 Cies 10 4000 5 2000 Coes Cres 0 1 10 100 0 0 100 200 300 400 500 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 15 Total Switching Losses (mJ) 13 Total Switching Losses (mJ) V CC = 800V V GE = 15V TJ = 25 ° C 14 I C = 42A 100 RG = 5.0 Ω VGE = 15V VCC = 800V IC = 84 A IC = 42 A 10 12 IC = 21 A 11 10 9 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ω) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com (Ω) 5 IRG4PSH71KD 40 Total Switching Losses (mJ) RG TJ VCC VGE = 5.0 Ω = 150 ° C = 800V = 15V 1000 VGE = 20V T J = 125 oC 30 20 I C , Collector Current (A) 100 10 10 0 20 40 60 80 100 SAFE OPERATING AREA 1 1 10 100 1000 10000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 1000 Fig. 12 - Turn-Off SOA Instantaneous forward current - IF (A) 100 TJ = 150°C TJ = 125°C TJ = 25°C 10 1 0.0 2.0 4.0 6.0 Forward Voltage Drop - VFM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PSH71KD 300 100 I F = 84A I F = 42A I F = 21A I F = 84A I F = 42A I F = 21A 200 trr- (nC) Irr- ( A) 100 10 VR = 200 V T J = 12 5°C T J = 25 °C 0 100 VR = 2 00V T J = 12 5°C T J = 25 °C di f /dt - ( A/ µ s ) 1000 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt di f /dt - ( A/ µ s ) 5000 10000 VR = 2 00V T J = 125°C T J = 25°C 4000 I F = 84A I F = 42A di (rec) M/dt- (A /µs) I F = 84A 3000 IF = 21A I F = 42A I F = 21A Qrr- (nC) 1000 2000 1000 VR = 2 00V T J = 1 2 5 °C T J = 2 5 °C 0 100 1000 di f /dt - ( A/ µ s ) 100 100 1000 di f /dt - ( A/ µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4PSH71KD Same ty pe device as D .U.T. 90% Vge +Vge V ce 80% of Vce 430µF D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf E o ff = ∫ t1 + 5 µ S V c e Ic Vceic d tdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ieIc t dt Vce d t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PSH71KD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 800V 800V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PSH71KD Notes:  Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19) ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1% „ Pulse width 5.0µs, single shot Case Outline and Dimensions — Super-247 Dimensions are shown in millimeters WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 5/99 10 www.irf.com