IRG4RC10KD

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-252AA package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-ch an nel Benefits • Latest generation 4 IGBT's offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • For hints see design tip 97003 D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 9.0 5.0 18 18 4.0 16 10 ± 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A µs V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient (PCB mount)* Weight Typ. ––– ––– ––– 0.3 (0.01) Max. 3.3 7.0 50 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/30/00 IRG4RC10KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltageƒ 600 — — V VGE = 0V, IC = 250µA Temperature Coeff. of Breakdown Voltage — 0.58 — V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage — 2.39 2.62 IC = 5.0A VGE = 15V See Fig. 2, 5 — 3.25 — V IC = 9.0A — 2.63 — IC = 5.0A, TJ = 150°C Gate Threshold Voltage 3.0 — 6.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance „ 1.2 1.8 — S VCE = 50V, IC = 5.0A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Diode Forward Voltage Drop — 1.5 1.8 V IC = 4.0A See Fig. 13 — 1.4 1.7 IC = 4.0A, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — 10 — — — — — — — — — — — — — — — — — Typ. 19 2.9 9.8 49 28 97 140 0.25 0.14 0.39 — 46 32 100 310 0.56 7.5 220 29 7.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 29 IC = 5.0A 4.3 nC VCC = 400V See Fig.8 15 VGE = 15V — — TJ = 25°C ns 150 IC = 5.0A, VCC = 480V 210 VGE = 15V, RG = 100Ω — Energy losses include "tail" — mJ and diode reverse recovery 0.48 See Fig. 9,10,14 — µs VCC = 360V, TJ = 125°C VGE = 15V, RG = 100Ω , VCPK < 500V — TJ = 150°C, See Fig. 10,11,14 — IC = 5.0A, VCC = 480V ns — VGE = 15V, RG = 100Ω — Energy losses include "tail" — mJ and diode reverse recovery — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 2 www.irf.com IRG4RC10KD 1.6 For both: LOAD CURRENT (A) 1.2 D uty cy cle: 50% TJ = 125 ° C T s ink = 55 ° C 90 G ate drive as specified P ow e r Dis sip ation = 1.4 W S q u a re w a v e : 0.8 6 0% of rate d volta ge I 0.4 Id e a l d io d e s 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 °C  10 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) T = 150 °C  J 10 TJ = 150 °C  TJ = 25 °C  1 5 10 1 1.0  V GE = 15V 20µs PULSE WIDTH 5.0 6.0 2.0 3.0 4.0 7.0 V = 50V  5µs PULSE WIDTH CC 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4RC10KD 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) V = 15V  80 us PULSE WIDTH GE  I C = 10 A Maximum DC Collector Current(A) 4.0 6 3.0  IC = 5 A  I C = 2.5 A 4 2.0 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1  SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01  P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10KD 400 VGE , Gate-to-Emitter Voltage (V) 300  VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20  VCC = 400V I C = 5.0A 16 C, Capacitance (pF) Cies  200 12 8 100 C oes C res 4 0 1 10 100 0 0 4 8 12 16 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 ° C 0.38 I C = 5.0A   50 Ω RG = Ohm VGE = 15V VCC = 480V 0.36  IC = 10 A 1 0.34  IC = 5 A  IC = 2.5 A 0.32 0.30 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ω) TJ , Junction Temperature ( °C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC10KD 2.0 1.5 1.0 I C, Collector-to-Emitter Current (A) 4 6 8 10 Total Switching Losses (mJ)  RG TJ VCC VGE = 50 Ω Ohm = 150° C = 480V = 15V 100  VGE = 20V T J = 125 o C 10 0.5 0.0 0 2 SAFE OPERATING AREA 1 1 10 100 1000 I C , Collector Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA 10 TJ = 150 ° C TJ = 125 ° C T = 25 ° C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V olta g e D rop - V F M V ) ( Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4RC10KD 50 14 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C 45 I F = 8.0A I F = 4.0A 12 I F = 8.0A 10 40 I F = 4.0A trr- (nC) Irr- ( A) 8 35 6 30 4 25 VR = 2 00 V TJ = 1 2 5°C T J = 2 5 °C 20 100 1000 2 di f /dt - ( A/ µ s ) 0 100 1000 di f /dt - ( A/ µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 2 00 V T J = 1 25 ° C T J = 2 5 °C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 20 0V T J = 1 25 ° C T J = 2 5 °C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /µs) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - ( A/ µ s ) 1000 100 100 A 1000 di f /dt - ( A/ µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, www.irf.com 7 IRG4RC10KD Same ty pe device as D .U.T. 80% of Vce 430µF D .U .T. Vge VC 90% 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr Eon E ts = (Eon +Eoff ) tf t=5µs Eoff Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = ∫ trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 ∫ E re c = ∫ t4 V d idIc t dt Vd d t3 t1 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4RC10KD V g G AT E SIG NA L DE VIC E U ND E R T E S T CU R RE NT D .U .T. VO L TA G E IN D.U .T. CU R RE NT IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000µ F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25°C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.7 3 ( .2 65 ) 6.3 5 ( .2 50 ) -A5 .46 ( .21 5 ) 5 .21 ( .20 5 ) 4 6.45 ( .24 5 ) 5.68 ( .22 4 ) 6.2 2 ( .2 45 ) 5.9 7 ( .2 35 ) 1 .0 2 (.04 0 ) 1 .6 4 (.02 5 ) 1 2 3 0.51 ( .0 2 0 ) M IN . 10 .42 ( .41 0 ) 9 .4 0 ( .3 70 ) 1 .2 7 ( .0 50 ) 0 .8 8 ( .0 35 ) 2.3 8 ( .0 94 ) 2.1 9 ( .0 86 ) 1.1 4 ( .0 45 ) 0.8 9 ( .0 35 ) 0.58 ( .02 3 ) 0.46 ( .01 8 ) L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR -B 1 .5 2 ( .06 0 ) 1 .1 5 ( .04 5 ) 3X 1.1 4 ( .0 45 ) 2 X 0.7 6 ( .0 30 ) 2.28 ( .0 90 ) 4.57 ( .18 0 ) 0.89 ( .0 35 ) 0.64 ( .0 25 ) 0 .2 5 ( .0 10 ) M AMB 0 .5 8 ( .0 23 ) 0 .4 6 ( .0 18 ) 3 - EMITTER 4 - COLLECTOR N OT E S: 1 D IM EN SIO N IN G & TO L E R AN C IN G PE R A N SI Y 14 .5 M, 19 82. 2 C O N TR O LL ING D IM E N S IO N : IN C H. 3 C O N FO R M S T O JE D E C O U TL IN E TO - 252 A A. 4 D IM EN SIO N S S H OW N A RE B E F O RE S O LD E R D IP , S O L D ER D IP M A X. + 0.16 ( .0 06 ) . www.irf.com 9 IRG4RC10KD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Tape & Reel Information TO-252AA TR TRR TR L 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 16 .3 ( .64 1 ) 15 .7 ( .61 9 ) 12 .1 ( .4 7 6 ) 11 .9 ( .4 6 9 ) F E E D D IR E C T IO N 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N NOTES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM E T E R . 2 . A L L D IM EN S IO N S A R E S H O W N IN M IL L IM E T E R S ( IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 1 3 IN C H 16 m m NOTES : 1 . O U T L IN E C O N F O R M S T O E IA -4 8 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com