IRG6B330UDPBF

PD - 96304 IRG6B330UDPbF PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max C c 330 1.69 250 150 V V A °C G E G C E n-channel G G ate C C ollector TO-220AB E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) Max. ±30 70 40 250 160 63 1.3 -40 to + 150 300 Units V A c W W/°C °C x x N Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Weight d d Typ. ––– 1.6 0.24 ––– 6.0 (0.21) Max. 0.80 2.4 ––– 40 ––– Units d °C/W g (oz) www.irf.com 1 4/20/10 IRG6B330UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. 330 ––– ––– ––– ––– ––– ––– 2.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– — — — — — — — — 100 ––– ––– Typ. Max. Units ––– 0.34 1.18 1.36 1.69 2.26 1.93 ––– -11 2.0 5.0 100 ––– ––– 50 85 31 47 37 176 99 45 38 228 183 ––– 834 985 2297 141 74 5.0 13 ––– ––– 1.48 1.68 2.09 2.76 ––– 5.0 ––– 25 ––– ––– 100 -100 ––– ––– ––– — — — — — — — — ––– ––– ––– ––– ––– ––– ––– ––– pF V V/°C Conditions VGE = 0V, ICE = 1 mA Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 25A VGE = 15V, ICE = 40A VGE = 15V, ICE = 70A VGE = 15V, ICE = 120A VGE = 15V, ICE = 70A, TJ = 150°C VCE = VGE, ICE = 500µA VCE(on) Static Collector-to-Emitter Voltage V e e e e VGE(th) ∆VGE(th)/∆TJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse V mV/°C µA VCE = 330V, VGE = 0V VCE = 330V, VGE = 0V, TJ = 100°C VCE = 330V, VGE = 0V, TJ = 150°C nA VGE = 30V VGE = -30V VCE = 25V, ICE = 25A S nC VCE = 200V, IC = 25A, VGE = 15V IC = 25A, VCC = 196V RG = 10Ω , L=200µH, LS= 200nH TJ = 25°C IC = 25A, VCC = 196V RG = 10Ω , L=200µH, LS= 200nH TJ = 150°C e ns ns ns µJ Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– nH VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C VGE = 0V VCE = 30V ƒ = 1.0MHz, See Fig.13 Between lead, 6mm (0.25in.) from package and center of die contact Diode Characteristics @ TJ = 25°C (unless otherwise specified) Parameter IF(AV) IFSM VF trr Average Forward Current at TC=155°C Non Repetitive Peak Surge Current Forward Voltage Reverse Recovery Time Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units ––– ––– 1.19 0.94 35 43 67 60 210 2.8 6.3 8.0 100 1.3 1.0 60 ––– ––– ––– ––– ––– ––– A A V ns Conditions TJ = 155°C, PW = 6.0ms half sine wave IF = 8A IF = 8A, TJ = 150°C IF = 1A, di/dt = -50A/µs, VR =30V TJ = 25°C IF = 8A TJ = 125°C TJ = 25°C di/dt = 200A/µs VR = 200V TJ = 125°C TJ = 25°C TJ = 125°C Qrr Irr Reverse Recovery Charge Peak Recovery Current nC A Notes:  Half sine wave with duty cycle = 0.1, ton=2µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRG6B330UDPbF 200 VGE = 18V 200 VGE = 18V 160 160 VGE = 15V VGE = 12V ICE (A) ICE (A) VGE = 15V VGE = 12V VGE = 10V 120 VGE = 10V 120 VGE = 8.0V 80 VGE = 6.0V VGE = 8.0V VGE = 6.0V 80 40 40 0 0 4 8 VCE (V) 12 16 0 0 4 8 VCE (V) 12 16 Fig 1. Typical Output Characteristics @ 25°C 200 VGE = 18V 160 Fig 2. Typical Output Characteristics @ 75°C 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V VGE = 15V VGE = 12V VGE = 10V 160 ICE (A) VGE = 6.0V 80 ICE (A) 16 120 VGE = 8.0V 120 80 40 40 0 0 4 8 VCE (V) 12 0 0 4 8 V CE (V) 12 16 Fig 3. Typical Output Characteristics @ 125°C 300 250 200 150 100 50 0 2 4 6 8 10 12 14 16 VGE (V) T J = 25°C Fig 4. Typical Output Characteristics @ 150°C 14 IC = 25A 12 10 VCE (V) ICE (A) 8 6 4 2 0 0 5 10 V GE (V) TJ = 25°C TJ = 150°C T J = 150°C 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRG6B330UDPbF 80 70 300 Repetitive Peak Current (A) IC, Collector Current (A) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 200 100 ton= 2µs Duty cycle = 0.1 Half Sine Wave 0 25 50 75 100 125 150 Case Temperature (°C) T C, Case Temperature (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1000 VCC = 240V 900 L = 220nH C = variable Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 900 L = 220nH C = 0.4µF 100°C 800 700 600 500 400 25°C Energy per Pulse (µJ) 800 700 25°C 600 500 400 170 180 190 200 210 220 230 240 Energy per Pulse (µJ) 100°C 180 190 200 210 220 230 240 IC, Peak Collector Current (A) VCE, Collector-to-Emitter Voltage (V) Fig 9. Typical EPULSE vs. Collector Current 1400 VCC = 240V 1200 Energy per Pulse (µJ) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 L = 220nH t = 1µs half sine C= 0.4µF 1000 800 600 400 200 25 50 75 100 125 150 TJ, Temperature (ºC) C= 0.3µF 100 IC (A) 100 µs 1ms 10 µs 10 C= 0.2µF 1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area 4 www.irf.com IRG6B330UDPbF 10000 25 VGE, Gate-to-Source Voltage (V) ID= 25A VDS= 240V VDS= 200V VDS= 150V Cies 20 Capacitance (pF) 1000 15 10 100 Coes Cres 5 10 0 100 200 300 0 0 20 40 60 80 100 120 QG Total Gate Charge (nC) VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 1 D = 0.50 Thermal Response ( Z thJC ) Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 0.20 0.1 0.10 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.146 0.000131 0.382 0.271 0.001707 0.014532 0.01 τ2 Ci= τi /Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.10 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ2 τ3 τ4 τ4 0.1 0.05 0.02 0.01 τJ τ1 0.01 Ci= τi/Ri Ci i/Ri Ri (°C/W) 0.07854 0.829201 1.002895 0.490875 τι (sec) 0.000637 0.000532 0.003412 0.055432 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 5 IRG6B330UDPbF IF, Instantaneous Forward Current (A) 100 90 80 70 60 50 40 30 10 trr - (ns) IF = 8.0A, T J =125°C 1 Tj = 150°C Tj = 25°C IF = 8.0A, T J =25°C 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VFM, Forward Voltage Drop (V) 20 100 1000 Fig. 17 - Typical Forward Voltage Drop Characteristics 400 Fig. 18 - Typical Reverse Recovery vs. di F /dt dif / dt - (A / µs) 300 IF = 8.0A, T J =125°C Qrr - (ns) 200 100 A Fig.20 - Switching Loss Circuit IF = 8.0A, T J =25°C RG C L DRIVER 0 100 1000 dif / dt - (A / µs) VCC B Fig. 19- Typical Stored Charge vs. di F /dt VCE Energy IC Current RG Ipulse DUT Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms PULSE A L PULSE B 0 DUT 1K VCC tST Fig 21c. EPULSE Test Waveforms Fig. 22 - Gate Charge Circuit (turn-off) 6 www.irf.com IRG6B330UDPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqÃÃA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃÃ2Ã! X@@Fà ( GDI@Ã8 TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkigbt.html Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .04/2010 www.irf.com 7