IRG6I320UPBF

PD - 97351A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG6I320UPbF Key Parameters 330 1.45 160 150 V V A °C VCE min VCE(ON) typ. @ IC = 24A IRP max @ TC= 25°C TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) Max. ±30 24 12 160 39 16 0.31 -40 to + 150 300 Units V A c W W/°C °C x x N Thermal Resistance RθJC Junction-to-Case d Parameter Typ. ––– Max. 3.2 Units °C/W www.irf.com 1 03/25/09 IRG6I320UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions VGE = 0V, ICE = 500µA e 330 30 ––– ––– ––– ––– ––– 0.30 1.20 1.45 1.95 2.20 2.26 ––– -10 1.0 5.0 20 75 ––– ––– 28 46 7.7 24 20 89 70 23 52 130 140 ––– 240 280 ––– ––– ––– ––– 1.65 ––– ––– ––– 5.0 10 ––– 100 ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– V V VGE = 0V, ICE = 1 A V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 12A VGE = 15V, ICE V VGE = 15V, ICE VGE = 15V, ICE VCE(on) Static Collector-to-Emitter Voltage ––– ––– 2.6 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– Human Body Model VGE = 15V, ICE = 48A, TJ = 150°C V VCE = VGE, ICE = 250µA VCE = 330V, VGE = 0V µA e = 24A e = 48A e = 60A e VGE(th) ∆VGE(th)/∆TJ ICES e Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current ––– mV/°C VCE = 330V, VGE = 0V, TJ = 100°C VCE = 330V, VGE = 0V, TJ = 125°C VCE = 330V, VGE = 0V, TJ = 150°C nA S nC VGE = 30V VGE = -30V VCE = 25V, ICE = 12A VCE = 200V, IC = 12A, VGE = 15V IC = 12A, VCC = 196V ns RG = 10Ω, L=210µH, LS= 150nH TJ = 25°C IC = 12A, VCC = 196V ns RG = 10Ω, L=200µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.10µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.10µF, VGE = 15V IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse e ns µJ ESD Machine Model Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 1160 ––– 61 ––– pF VCE = 30V 38 4.5 7.5 ––– ––– nH ––– ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 Notes:  Half sine wave with duty cycle