IRG6I330UPBF

PD - 96192A PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG6I330UPbF Key Parameters 330 1.30 250 150 V V A °C VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25°C TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 28 15 250 43 17 0.34 -40 to + 150 300 Units V A c W W/°C °C 10lb in (1.1N m) x x N Thermal Resistance RθJC Junction-to-Case d Parameter Typ. ––– Max. 2.9 Units °C/W www.irf.com 1 09/11/09 IRG6I330UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions VGE = 0V, ICE = 1 mA e 330 30 ––– ––– ––– ––– ––– 0.29 1.13 1.30 1.43 1.80 2.38 2.10 ––– -12 2.0 10 40 150 ––– ––– 94 86 36 39 32 120 55 37 33 159 95 ––– 943 1086 ––– ––– ––– ––– 1.55 ––– ––– ––– ––– 5.0 VGE = 0V, ICE = 1 A V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 15A VGE = 15V, ICE = 28A V VGE = 15V, ICE VGE = 15V, ICE V V VCE(on) Static Collector-to-Emitter Voltage ––– ––– ––– 2.6 ––– ––– ––– ––– VGE = 15V, ICE VGE = 15V, ICE = 70A, TJ = 150°C V VCE = VGE, ICE = 500µA e e = 40A e = 70A e = 120A e VGE(th) ∆VGE(th)/∆TJ ICES e Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– ––– mV/°C VCE = 330V, VGE = 0V 20 VCE = 330V, VGE = 0V, TJ = 100°C ––– µA VCE = 330V, VGE = 0V, TJ = 125°C 200 VCE = 330V, VGE = 0V, TJ = 150°C ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns µJ ns nA S nC VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V IC = 25A, VCC = 196V ns RG = 10Ω, L=200µH, LS= 150nH TJ = 25°C IC = 25A, VCC = 196V RG = 10Ω, L=200µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V e ESD Cies Coes Cres LC LE Human Body Model Machine Model Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2275 ––– 108 ––– pF VCE = 30V 75 4.5 7.5 ––– ––– nH ––– ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 Notes:  Half sine wave with duty cycle = 0.05, ton=2µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRG6I330UPbF 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V ICE (A) 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 400 ICE (A) 300 300 200 200 100 100 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VCE (V) VCE (V) Fig 1. Typical Output Characteristics @ 25°C 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V Fig 2. Typical Output Characteristics @ 75°C 500 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 400 400 ICE (A) 300 200 ICE (A) 300 200 100 100 0 0 2 4 6 8 10 0 0 2 4 6 8 10 VCE (V) VCE (V) Fig 3. Typical Output Characteristics @ 125°C 500 Fig 4. Typical Output Characteristics @ 150°C 25 IC = 25A 20 400 TJ = 150°C T J = 25°C VCE (V) ICE (A) 300 15 TJ = 25°C 10 TJ = 150°C 200 100 5 0 0 2 4 6 8 10 12 14 16 18 VGE (V) 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRG6I330UPbF 30 25 Repetitive Peak Current (A) 260 240 220 200 180 160 140 120 100 80 60 40 20 ton= 2µs Duty cycle