IRG6IC30UPBF

PD - 97386 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG6IC30UPbF Key Parameters VCE min VCE(ON) typ. @ IC = 25A IRP max @ TC= 25°C TJ max c 600 1.50 250 150 V V A °C C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 1 5V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 25 12 250 37 15 0.30 -40 to + 150 300 Units V A c W W/°C °C 10lb in (1.1N m) x x N Thermal Resistance RθJC RθJA Junction-to-Case Junction-to-Ambient d Parameter Typ. ––– ––– Max. 3.1 65 Units °C/W d www.irf.com 1 03/31/09 IRG6IC30UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions VGE = 0V, ICE = 1.0mA e 600 15 ––– ––– ––– ––– ––– 0.49 1.29 1.50 1.73 2.16 2.88 1.51 ––– -8.9 2.0 10 40 150 ––– ––– 32 79 30 20 16 160 120 18 17 190 240 ––– 1020 1150 ––– ––– ––– ––– 1.92 ––– ––– ––– ––– V V VGE = 0V, ICE = 1.0A V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 12A VGE = 15V, ICE = 25A V VGE = 15V, ICE VGE = 15V, ICE VGE = 15V, ICE VCE(on) Static Collector-to-Emitter Voltage ––– ––– ––– 2.6 ––– ––– ––– ––– ––– VGE(th) ∆VGE(th)/∆TJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current VGE = 15V, ICE = 25A, TJ = 150°C 5.0 V VCE = VGE, ICE = 500µA ––– mV/°C VCE = 600V, VGE = 0V 20 VCE = 600V, VGE = 0V, TJ = 100°C ––– µA VCE = 600V, VGE = 0V, TJ = 125°C 100 ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns µJ IC = 25A, VCC = 400V ns RG = 10Ω, L=200µH TJ = 150°C ns nA S nC VCE = 600V, VGE = 0V, TJ = 150°C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 400V, IC = 25A, VGE = 15V IC = 25A, VCC = 400V RG = 10Ω, L=200µH TJ = 25°C e e = 40A e = 70A e = 120A e e IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– e VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V ESD Cies Coes Cres LC LE Human Body Model Machine Model Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 2390 ––– 85 ––– pF VCE = 30V 58 4.5 7.5 ––– ––– nH ––– ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 Notes:  Half sine wave with duty cycle