IRG6S320UPBF

PDP TRENCH IGBT PD -96218A IRG6S320UPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters VCE min VCE(ON) typ. @ IC = 24A IRP max @ TC= 25°C TJ max C 330 1.45 160 150 V V A °C C E G E G D2Pak IRG6S320UPbF n-channel G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Max. ±30 50 25 160 114 45 0.91 -40 to + 150 300 Units V A W W/°C °C f c Thermal Resistance RθJC Junction-to-Case d Parameter Typ. ––– Max. 1.1 Units °C/W www.irf.com 1 09/11/09 IRG6S320UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions VGE = 0V, ICE = 500µA e 330 30 ––– ––– ––– ––– ––– 0.30 1.20 1.45 1.95 2.20 2.26 ––– -10 1.0 5.0 20 75 ––– ––– 28 46 7.7 24 20 89 70 23 52 130 140 ––– 240 280 ––– ––– ––– ––– 1.65 ––– ––– ––– 5.0 V V VGE = 0V, ICE = 1 A V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 12A VGE = 15V, ICE = 24A V VGE = 15V, ICE VGE = 15V, ICE VCE(on) Static Collector-to-Emitter Voltage ––– ––– VGE = 15V, ICE = 48A, TJ = 150°C V VCE = VGE, ICE = 250µA e e = 48A e = 60A e e VGE(th) ∆VGE(th)/∆TJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current 2.6 ––– ––– ––– ––– IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– ––– mV/°C VCE = 330V, VGE = 0V 10 VCE = 330V, VGE = 0V, TJ = 100°C ––– µA VCE = 330V, VGE = 0V, TJ = 125°C 100 VCE = 330V, VGE = 0V, TJ = 150°C ––– 100 nA VGE = 30V -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns µJ IC = 12A, VCC = 196V ns RG = 10Ω, L=200µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.10µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.10µF, VGE = 15V ns VGE = -30V S nC VCE = 25V, ICE = 12A VCE = 200V, IC = 12A, VGE = 15V IC = 12A, VCC = 196V RG = 10Ω, L=210µH, LS= 150nH TJ = 25°C e Human Body Model ESD Machine Model Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 2 (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 1160 ––– 61 ––– pF VCE = 30V 38 5.0 13 ––– ––– nH ––– ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 Notes:  Half sine wave with duty cycle