IRG7I313UPBF

PD - 97411 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7I313UPbF Key Parameters 330 1.35 160 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C G E G C E n-channel G G ate C C olle ctor TO-220 Full-Pak IRG7I313UPbF E Em itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 1 5V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 20 10 160 34 14 0.27 -40 to + 150 Units V A W W/°C °C c 300 10 lbf·in (1.1 N·m) Thermal Resistance RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight d Parameter Typ. ––– 0.50 — Max. 3.7 — Units °C/W g 65 — 2.0 www.irf.com 1 08/05/09 IRG7I313UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units 330 ––– ––– ––– ––– 0.4 1.21 1.35 1.75 2.14 1.41 ––– -10 1.0 25 75 ––– ––– 47 33 12 11 13 75 68 11 14 86 190 ––– 480 570 ––– ––– 1.45 ––– ––– ––– ––– 4.7 10 150 ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns µJ ns nA S nC V Conditions VGE = 0V, ICE = 250µA V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 12A VGE = 15V, ICE = 20A V VGE = 15V, ICE VGE = 15V, ICE VGE = 15V, ICE = 20A, TJ = 150°C V VCE = VGE, ICE = 1.0mA VCE = 330V, VGE = 0V µA VCE = 330V, VGE = 0V, TJ = 125°C VCE = 330V, VGE = 0V, TJ = 150°C VGE = 30V VGE = -30V VCE = 25V, ICE = 12A VCE = 240V, IC = 12A, VGE = 15V IC = 12A, VCC = 196V RG = 10Ω, L=210µH TJ = 25°C IC = 12A, VCC = 196V ns RG = 10Ω, L=200µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.20µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.20µF, VGE = 15V VCE(on) Static Collector-to-Emitter Voltage ––– ––– 2.2 ––– ––– ––– e e = 40A e = 60A e VGE(th) ∆VGE(th)/∆TJ ICES e Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current ––– mV/°C IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– e Human Body Model ESD Machine Model Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 1C (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 880 ––– 47 ––– pF VCE = 30V 26 4.5 7.5 ––– ––– nH ––– ƒ = 1.0MHz Between lead, 6mm (0.25in.) from package and center of die contact Notes:  Half sine wave with duty cycle = 0.05, ton=2µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRG7I313UPbF 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 160 160 ICE (A) 80 ICE (A) 120 VGE = 8.0V VGE = 6.0V 120 VGE = 8.0V VGE = 6.0V 80 40 40 0 0 2 4 6 VCE (V) 8 10 0 0 2 4 6 VCE (V) 8 10 Fig 1. Typical Output Characteristics @ 25°C 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V Fig 2. Typical Output Characteristics @ 75°C 200 VGE = 18V VGE = 15V VGE = 12V VGE = 10V 160 160 ICE (A) 80 ICE (A) 120 VGE = 8.0V VGE = 6.0V 120 VGE = 8.0V VGE = 6.0V 80 40 40 0 0 2 4 6 VCE (V) 8 10 0 0 2 4 6 VCE (V) 8 10 Fig 3. Typical Output Characteristics @ 125°C 200 Fig 4. Typical Output Characteristics @ 150°C 14 IC = 12A 12 10 VCE (V) 160 ICE (A) 120 T J = 25°C 80 8 6 4 TJ = 25°C TJ = 150°C T J = 150°C 40 2 0 2 4 6 8 10 12 14 16 0 V GE (V) 0 5 10 V GE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRG7I313UPbF 20 160 140 ton= 2µs Duty cycle = 0.05 Half Sine Wave 15 Repetitive Peak Current (A) 25 50 75 100 125 150 120 100 80 60 40 20 IC (A) 10 5 0 0 25 50 75 100 125 150 Case Temperature (°C) T C (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1300 1200 VCC = 240V L = 220nH C = variable 100°C Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1300 1200 L = 220nH C = 0.4µF 100°C Energy per Pulse (µJ) Energy per Pulse (µJ) 1100 1000 900 800 700 600 500 400 1100 1000 900 800 700 600 25°C 25°C 160 170 180 190 200 210 220 230 195 200 205 210 215 220 225 230 235 240 VCE, Collector-to-Emitter Voltage (V) IC, Peak Collector Current (A) Fig 9. Typical EPULSE vs. Collector Current 1600 VCC = 240V 1400 Energy per Pulse (µJ) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 100 L = 220nH t = 1µs half sine C= 0.4µF 10µsec 100µsec 10 IC (A) 1200 1000 800 600 400 25 50 75 100 125 150 TJ, Temperature (ºC) C= 0.2µF 1msec C= 0.3µF 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRG7I313UPbF 10000 20 VGE, Gate-to-Source Voltage (V) ID= 12A VDS = 240V VDS = 150V VDS = 60V 16 Capacitance (pF) 1000 Cies 12 8 100 Coes Cres 10 0 100 200 4 0 0 10 20 30 40 QG Total Gate Charge (nC) VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.0433 1.3307 1.5908 0.7282 0.000006 0.000170 0.001311 0.006923 τi (sec) 0.01 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRG7I313UPbF A RG DRIVER L C PULSE A VCC B PULSE B Ipulse RG DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRG7I313UPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#Bà XDUCÃ6TT@H7G`à GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃXXÃ!#Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S DSAD'#B !#F Ã"#ÃÃÃÃÃÃÃÃÃ"! I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ!# GDI@ÃF TO-220 Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2009 www.irf.com 7