IRG7PH42UD1-EP

PD - 97480 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH42UD1PbF IRG7PH42UD1-EP VCES = 1200V I NOMINAL = 30A Features • • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA Ultra-low VF Diode 1300Vpk repetitive transient capacity 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead free package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.7V Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), low switching losses and Ultra-low VF • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation • Low EMI C GC E TO-247AC IRG7PH42UD1PbF E GC TO-247AD IRG7PH42UD1-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE=15V Diode Continous Forward Current Diode Continous Forward Current Diode Repetitive Peak Forward Current Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 1200 85 45 30 Units V g h d Clamped Inductive Load Current, VGE=20V c 90 120 70 35 120 ±30 313 125 -55 to +150 A V W °C Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA f Thermal Resistance Junction-to-Case-(each Diode) f Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Parameter Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.4 1.05 ––– ––– Units °C/W 1 www.irf.com 3/26/10 IRG7PH42UD1PbF/IRG7PH42UD1-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES VCES(Transient) ΔV(BR)CES/ΔTJ Min. 1200 — — — — 3.0 — — — — — — Typ. — — 1.2 1.7 2.0 — 32 1.0 230 1.15 1.10 — Max. Units — 1300 — 2.0 — 6.0 — 100 — 1.30 — ±100 Conditions Collector-to-Emitter Breakdown Voltage Repetitive Transient Collector-to-Emitter Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current VCE(on) VGE(th) gfe ICES VFM IGES V VGE = 0V, IC = 100μA V VGE = 0V, TJ=75°C, PW ≤ 10μs V/°C VGE = 0V, IC = 2.0mA (25°C-150°C) IC = 30A, VGE = 15V, TJ = 25°C V IC = 30A, VGE = 15V, TJ = 150°C V VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 30A, PW = 80μs VGE = 0V, VCE = 1200V μA VGE = 0V, VCE = 1200V, TJ = 150°C IF = 30A V IF = 30A, TJ = 150°C nA VGE = ±30V e e Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eoff td(off) tf Eoff td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-Off Switching Loss Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. — — — — — — — — — — — — Typ. 180 24 70 1210 270 35 1936 300 160 3390 130 83 Max. Units 270 36 110 1450 290 43 — — — — — — nC Conditions IC = 30A VGE = 15V VCC = 600V IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200μH,TJ = 25°C Energy losses include tail μJ ns μJ ns IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200μH,TJ = 25°C IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200μH,TJ = 150°C Energy losses include tail pF FULL SQUARE IC = 30A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200μH, TJ = 150°C VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 120A VCC = 960V, Vp =1200V Rg = 10Ω , VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. … Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. † Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions. 2 www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP 100 LIMITED BY PACKAGE 350 300 IC, Collector Current (A) 80 250 Ptot (W) 25 50 75 100 125 150 60 200 150 100 40 20 50 0 TC, Case Temperature (°C) 0 25 50 75 100 125 150 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature V GE(th), Gate Threshold Voltage (Normalized) Fig. 2 - Power Dissipation vs. Case Temperature 1000 1.0 IC = 1.0mA 0.9 100 0.8 IC (A) 10 1 0.7 0.6 0.5 25 50 75 100 125 150 TJ , Temperature (°C) 10 100 VCE (V) 1000 10000 Fig. 3 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 120 100 80 V GE = 18V V GE = 15V V GE = 12V V GE = 10V ICE (A) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V 120 V GE = 18V 100 80 60 40 20 0 V GE = 15V V GE = 12V V GE = 10V V GE = 8.0V ICE (A) 60 40 20 0 0 2 4 6 V GE = 8.0V 8 10 0 2 4 6 8 10 V CE (V) V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs www.irf.com 3 IRG7PH42UD1PbF/IRG7PH42UD1-EP 120 100 80 VGE = 18V VGE = 15V 140 120 100 25°C 150°C VGE = 12V VGE = 10V VGE = 8.0V IF (A) ICE (A) 80 60 40 20 0 60 40 20 0 0 2 4 6 8 10 0.0 0.5 1.0 VF (V) 1.5 2.0 V CE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80μs 20 18 16 14 VCE (V) VCE (V) Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics 20 18 16 14 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 15A ICE = 30A ICE = 60A 12 10 8 6 4 2 0 5 10 ICE = 15A ICE = 30A ICE = 60A 15 20 15 VGE (V) 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 ICE, Collector-to-Emitter Current (A) 120 100 80 60 40 20 0 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 18 16 14 VCE (V) 12 10 8 6 4 2 0 5 10 V GE (V) 15 20 ICE = 15A ICE = 30A ICE = 60A TJ = 25°C TJ = 150°C 2 4 6 8 10 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs 4 www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP 5000 1000 4000 Swiching Time (ns) EOFF Energy (μJ) 3000 tdOFF 2000 1000 100 tF 0 0 10 20 30 40 50 60 70 I C (A) 0 10 20 30 40 50 60 70 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V 6500 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 5500 tdOFF Swiching Time (ns) 1000 Energy (μJ) 4500 EOFF 3500 100 tF 2500 1500 0 25 50 75 100 125 RG (Ω) 10 0 20 40 60 RG (Ω) 80 100 120 Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V 10000 Cies Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V 16 14 12 10 8 6 4 2 0 V CES =600V V CES = 400V Capacitance (pF) 1000 100 Coes Cres 10 0 20 40 60 80 100 VCE (V) VGE, Gate-to-Emitter Voltage (V) 0 50 100 150 200 Q G, Total Gate Charge (nC) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18 - Typical Gate Charge vs. VGE ICE = 30A; L = 680μH www.irf.com 5 IRG7PH42UD1PbF/IRG7PH42UD1-EP 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.1306 0.1752 0.0814 0.0031 τi (sec) 0.000313 0.002056 0.008349 0.0431 τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.01186 0.39298 0.43450 0.22096 τi (sec) 0.00001 0.000547 0.003563 0.021596 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP L L 0 DUT 1K VCC 80 V + - DUT Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT L Fig.C.T.2 - RBSOA Circuit C force 100K D1 22K C sens e -5V DUT / DRIVER Rg VCC G force DUT 0.0075μF E sense E force Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - BVCES Filter Circuit 800 700 600 500 VCE (V) 400 90% ICE 80 tf 70 60 50 ICE (A) 40 30 20 5% VCE 5% ICE 300 200 100 0 10 0 -100 -1 -0.5 0 0.5 Eoff Loss -10 1.5 2 1 time(μ s) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.3 www.irf.com 7 IRG7PH42UD1PbF/IRG7PH42UD1-EP Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2001 IN THE AS SEMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" PART NUMBER IRFPE30 56 135H 57 INTERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRG7PH42UD1PbF/IRG7PH42UD1-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: T HIS IS AN IRGP30B120KD-E WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in as sembly line pos ition indicates "Lead-Free" PART NUMBER 035H 57 INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE 56 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/2010 www.irf.com 9