IRG7PH46UD-EP

PD - 97498 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient Ultra fast soft recovery co-pak diode Tight parameter distribution Lead-Free IRG7PH46UDPbF IRG7PH46UD-EP C VCES = 1200V I NOMINAL = 40A G E TJ(max) = 150°C Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation n-channel C VCE(on) typ. = 1.7V C Applications • • • • U.P.S. Welding Solar Inverter Induction Heating GC E TO-247AC IRG7PH46UDPbF E GC TO-247AD IRG7PH46UD-EP G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current (Silicon Limited) Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 1200 108 57 40 120 160 108 57 160 ±30 390 156 -55 to +150 Units V c A d Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance RθJC (IGBT) RθJC (Diode) RθCS RθJA f Thermal Resistance Junction-to-Case-(each Diode) f Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Parameter Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.32 0.66 ––– ––– Units °C/W 1 www.irf.com 04/26/2010 IRG7PH46UDPbF/IRG7PH46UD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 1200 — — — 3.0 — — — — — — — Typ. — 1.2 1.7 2.0 — -13 50 1.5 2.0 3.1 3.0 — Max. Units — — 2.0 — 6.0 — — 100 — 4.8 — ±200 nA V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage e VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current V/°C VGE = 0V, IC = 1.0mA (25°C-150°C) IC = 40A, VGE = 15V, TJ = 25°C V IC = 40A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 1.6mA V mV/°C VCE = VGE, IC = 1.6mA (25°C - 150°C) VCE = 50V, IC = 40A, PW = 20µs S µA mA V VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C IF = 40A IF = 40A, TJ = 150°C VGE = ±30V gfe ICES VFM IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 220 30 85 2610 1845 4455 45 40 410 45 3790 2905 6695 40 40 480 200 4820 150 110 Max. Units 320 50 130 3515 2725 6240 60 60 450 60 — — — — — — — — — — pF ns µJ ns µJ nC IC = 40A d Conditions VGE = 15V VCC = 600V IC = 40A, VCC = 600V, VGE = 15V RG = 10Ω , L = 200µH,TJ = 25°C g Energy losses include tail & diode reverse recovery IC = 40A, VCC = 600V, VGE=15V RG=10Ω , L=200µH, TJ = 150°C g Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 160A VCC = 960V, Vp ”1200V Rg = 10Ω , VGE = +20V to 0V FULL SQUARE — — — 1130 140 40 — — — µJ ns A TJ = 150°C VCC = 600V, IF = 40A Rg = 10Ω , L =1.0mH Notes:  VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. … Values influenced by parasitic L and C of the test circuit. 2 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 100 Duty cycle : 50% Tj = 150°C Tc = 100°C Vcc = 600V Gate drive as specified Power Dissipation = 154W 80 Load Current ( A ) Square Wave: 60 VCC 40 I 20 Diode as specified 0 0.1 1 f , Frequency ( kHz ) 10 100 Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 120 100 80 60 40 20 0 25 50 75 100 125 150 Ptot (W) 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 T C (°C) IC (A) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 T C (°C) Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 10µsec 100 IC (A) IC (A) 10 DC 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 VCE (V) 1000 10000 100µsec 1msec 10 1 10 100 VCE (V) 1000 10000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 150°C; VGE =15V Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V www.irf.com 3 IRG7PH46UDPbF/IRG7PH46UD-EP 160 140 120 100 ICE (A) 160 140 120 80 60 40 20 0 0 2 4 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 ICE (A) 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 6 8 10 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 30µs 160 140 120 100 VGE = 18V VGE = 15V VGE = 12V Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 30µs 160 140 120 100 -40°C 25°C 150°C ICE (A) 80 60 40 20 0 0 2 4 6 IF (A) 10 80 60 40 20 0 VGE = 10V VGE = 8.0V 8 0.0 1.0 2.0 3.0 VF (V) 4.0 5.0 6.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 30µs 12 10 8 VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 30µs 12 10 8 VCE (V) 6 4 2 0 4 8 ICE = 20A ICE = 40A ICE = 80A 6 4 2 0 ICE = 20A ICE = 40A ICE = 80A 12 VGE (V) 16 20 4 8 12 VGE (V) 16 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 4 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 12 ICE, Collector-to-Emitter Current (A) 120 100 80 60 40 20 0 T J = 25°C T J = 150°C 10 8 VCE (V) 6 4 2 0 4 8 ICE = 20A ICE = 40A ICE = 80A 12 VGE (V) 16 20 4 5 6 7 8 9 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 9000 8000 7000 6000 Energy (µJ) Fig. 12 - Typ. Transfer Characteristics VCE = 50V 1000 tdOFF Swiching Time (ns) 5000 4000 3000 2000 1000 0 0 10 20 30 EON tF 100 tdON EOFF tR 10 40 IC (A) 50 60 70 80 0 10 20 30 40 IC (A) 50 60 70 80 Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 9000 8000 Energy (µJ) Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V 10000 EOFF Swiching Time (ns) 1000 tdOFF 7000 6000 5000 4000 3000 2000 0 20 40 60 80 100 RG ( Ω) EON tF 100 tdON tR 10 0 20 40 60 80 100 RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V www.irf.com 5 IRG7PH46UDPbF/IRG7PH46UD-EP 50 40 40 35 RG = 5.0Ω IRR (A) 30 RG = 10Ω RG = 47Ω IRR (A) 30 25 20 20 RG = 100Ω 10 10 20 30 40 50 60 70 80 IF (A) 15 0 20 40 60 80 100 RG (Ω) Fig. 17 - Typ. Diode IRR vs. IF TJ = 150°C 40 6000 Fig. 18 - Typ. Diode IRR vs. RG TJ = 150°C 35 5000 80A QRR (µC) IRR (A) 30 4000 40A 10Ω 20A 5.0Ω 25 3000 47Ω 100Ω 20 2000 15 200 300 400 500 600 700 800 diF /dt (A/µs) 1000 100 200 300 400 500 600 700 800 900 1000 diF /dt (A/µs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 600V; VGE = 15V; IF = 40A; TJ = 150°C 1600 RG = 5.0 Ω RG = 10 Ω 1200 Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 600V; VGE = 15V; TJ = 150°C RG = 47Ω RG = 100Ω Energy (µJ) 800 400 0 20 30 40 50 IF (A) 60 70 80 Fig. 21 - Typ. Diode ERR vs. IF TJ = 150°C 6 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 10000 Cies Capacitance (pF) VGE, Gate-to-Emitter Voltage (V) 16 14 12 10 8 6 4 2 0 VCES = 600V VCES = 400V 1000 100 Coes Cres 10 0 100 200 300 VCE (V) 400 500 600 0 40 80 120 160 200 240 Q G, Total Gate Charge (nC) Fig. 22 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1 Fig. 23 - Typical Gate Charge vs. VGE ICE = 40A; L = 2400H D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.01330 0.08573 0.12712 0.09903 0.000031 0.001470 0.002625 0.012121 τi (sec) τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.007488 0.235126 0.280054 0.136283 τi (sec) 0.000016 0.00057 0.00409 0.022342 τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRG7PH46UDPbF/IRG7PH46UD-EP L L 0 DUT 1K VCC 80 V + - DUT Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L R= V CC ICM -5V DUT / DRIVER Rg VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit C force 100K D1 DUT 0.0075µF 22K C sens e G force E sense E force Fig.C.T.5 - BVCES Filter Circuit 8 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP 900 800 700 600 500 V CE (V) 400 300 200 100 0 -100 -0.5 Eoff Loss 5% VCE 90 tf 80 70 60 50 V CE (V) 900 800 700 600 500 tr TEST CURRENT 90 80 70 60 50 90% test current I CE (A) 90% ICE 40 30 20 400 300 200 100 0 -100 -2 -1 0 1 1 tes t 0% current 40 30 20 10 0 -10 5 5% V CE 5% ICE 10 0 -10 1.5 2 Eon Loss 2 3 4 0 0.5 1 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 50 40 30 20 10 IF (A) 0 -10 -20 -30 -40 -50 -0.20 0.00 0.20 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Peak IRR 10% Peak IRR EREC tRR 0.40 0.60 www.irf.com I CE (A) 9 IRG7PH46UDPbF/IRG7PH46UD-EP Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)3( à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRG7PH46UDPbF/IRG7PH46UD-EP Dimensions are shown in millimeters (inches) TO-247AD Package Outline TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/2010 www.irf.com 11