IRG7S319UPBF

PD - 97155 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRG7S319UPbF Key Parameters 330 1.26 170 150 V V A °C VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max C G E G C E n-channel G Gate C Collector D2Pak IRG7S319UPbF E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds 300 Max. ±30 45 20 170 96 38 0.77 -40 to + 150 Units V A W W/°C °C c Thermal Resistance RθJC Junction-to-Case d Parameter Typ. ––– Max. 1.3 Units °C/W www.irf.com 1 10/2/09 IRG7S319UPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES ΔΒVCES/ΔTJ Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units 330 ––– ––– ––– ––– 0.38 1.26 1.34 1.65 ––– ––– ––– 2.02 2.79 1.39 ––– -8.8 1.0 50 ––– 125 ––– ––– 55 38 13 16 22 81 105 16 25 95 203 ––– 854 1083 ––– ––– 1.43 ––– ––– ––– ––– ––– 4.7 20 200 ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ns μJ ns ns S nC nA μA V ––– mV/°C V Conditions V VGE = 0V, ICE = 250μA V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 20A VGE = 15V, ICE = 25A VGE = 15V, ICE VGE = 15V, ICE VGE = 15V, ICE VCE(on) Static Collector-to-Emitter Voltage VGE = 15V, ICE = 25A, TJ = 150°C VCE = VGE, ICE = 1.3mA VCE = 330V, VGE = 0V e e = 45A e = 70A e = 120A e e VGE(th) ΔVGE(th)/ΔTJ ICES Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current 2.2 ––– ––– VCE = 330V, VGE = 0V, TJ = 125°C VCE = 330V, VGE = 0V, TJ = 150°C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15V IC = 25A, VCC = 196V RG = 10Ω, L=200μH TJ = 25°C IC = 25A, VCC = 196V RG = 10Ω, L=200μH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40μF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40μF, VGE = 15V IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– e Human Body Model ESD Machine Model Cies Coes Cres LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– VCC = 240V, RG= 5.1Ω, TJ = 100°C Class 1C (Per JEDEC standard JESD22-A114) Class B (Per EIA/JEDEC standard EIA/JESD22-A115) VGE = 0V 1098 ––– 56 32 4.5 7.5 ––– ––– ––– nH ––– pF VCE = 30V ƒ = 1.0MHz Between lead, 6mm (0.25in.) from package and center of die contact Notes:  Half sine wave with duty cycle = 0.05, ton=2μsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%. 2 www.irf.com IRG7S319UPbF 200 VGE = 18V VGE = 15V VGE = 12V 200 160 160 VGE = 18V VGE = 15V ICE (A) ICE (A) 120 80 VGE = 10V VGE = 8.0V VGE = 6.0V 120 VGE = 12V VGE = 10V VGE = 8.0V 80 VGE = 6.0V 40 40 0 0 2 4 6 VCE (V) 8 10 0 0 2 4 6 VCE (V) 8 10 Fig 1. Typical Output Characteristics @ 25°C 200 Fig 2. Typical Output Characteristics @ 75°C 200 160 VGE = 18V ICE (A) 160 VGE = 18V ICE (A) 120 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 120 80 80 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 40 40 0 0 2 4 6 VCE (V) 8 10 0 0 2 4 6 VCE (V) 8 10 Fig 3. Typical Output Characteristics @ 125°C 200 Fig 4. Typical Output Characteristics @ 150°C 10 IC = 25A 160 8 80 T J = 25°C T J = 150°C VCE (V) ICE (A) 120 6 TJ = 25°C TJ = 150°C 4 40 2 0 2 4 6 8 10 12 VGE (V) 0 0 5 10 V GE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRG7S319UPbF 50 200 Repetitive Peak Current (A) 40 160 30 IC (A) 120 20 80 ton= 2μs Duty cycle = 0.05 Half Sine Wave 10 40 0 0 25 50 75 TC (°C) 100 125 150 0 25 50 75 100 125 150 Case Temperature (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1100 VCC = 240V 1000 L = 220nH C = variable 100°C Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1400 1300 L = 220nH C = 0.4μF 100°C Energy per Pulse (μJ) Energy per Pulse (μJ) 900 800 25°C 700 600 500 160 170 180 190 200 210 220 230 1200 1100 1000 900 800 700 200 210 220 230 25°C 240 250 260 270 IC, Peak Collector Current (A) VCC, Collector-to-Supply Voltage (V) Fig 9. Typical EPULSE vs. Collector Current 1200 VCC = 240V 1000 L = 220nH t = 1μs half sine C= 0.4μF Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage 100 100 μs 10 μs Energy per Pulse (μJ) 10 IC (A) 800 C= 0.3μF 1ms 1 600 C= 0.2μF 400 25 50 75 100 125 150 TJ, Temperature (ºC) 0.1 1 10 V CE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRG7S319UPbF 10000 20 VGE, Gate-to-Source Voltage (V) ID= 25A VDS = 240V VDS = 200V VDS = 60V 16 Capacitance (pF) 1000 Cies 12 8 100 Coes Cres 10 0 100 200 4 0 0 10 20 30 40 QG Total Gate Charge (nC) VCE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Thermal Response ( ZthJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τι (sec) τ2 0.01 Ci= τ i/Ri Ci= τi/Ri 0.459659 0.000349 0.55727 0.001537 0.283959 0.00944 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRG7S319UPbF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRG7S319UPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECT IF IER LOGO AS SEMBLY LOT CODE PART NUMBER F 530S DAT E CODE P = DES IGNAT ES LEAD - F REE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMBLY S IT E CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRG7S319UPbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/2009 8 www.irf.com