IRGB4055PBF

PD - 97058B PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (E PULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package C IRGB4055PbF IRGS4055PbF K ey Param eters 300 1.70 270 150 V V A °C V CE m in V CE (O N) t yp. @ 110A I RP m ax @ T C = 25°C T J m ax c C C G E E C G E C G D2Pak IRGS4055DPbF n-channel TO-220 IRGB4055DPbF G Gate C Collector E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. ±30 110 60 270 Units V A f c 255 102 2.04 -40 to + 150 300 W W/°C °C 10lb in (1.1N m) x x N Thermal Resistance RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Junction-to-Ambient (PCB Mount) , D2Pak d Parameter Typ. ––– 0.50 ––– ––– Max. 0.50 ––– 62 40 Units °C/W d d www.irf.com 1 03/16/07 IRGB/S4055PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES ∆ΒVCES/∆TJ VCE(on) Collector-to-Emitter Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. 300 ––– ––– ––– ––– ––– 2.6 ––– ––– ––– ––– ––– ––– ––– ––– — — — — — — — — 100 ––– ––– Typ. Max. Units ––– 0.23 1.10 1.70 2.35 1.95 ––– -11 2.0 100 ––– ––– 38 132 42 44 39 245 152 42 40 362 309 ––– 705 915 4280 200 125 5.0 13 ––– ––– 1.30 2.10 ––– ––– 5.0 ––– 25 ––– 100 -100 ––– ––– ––– 57 55 308 198 — — — — ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ ns Conditions Static Collector-to-Emitter Voltage VGE = 0V, ICE = 1 mA V V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 35A V VGE = 15V, ICE = 110A V V V V VGE = 15V, ICE VGE = 15V, ICE = 110A, TJ = 150°C VCE = VGE, ICE = 1mA e e = 200A e VGE(th) ∆VGE(th)/∆TJ ICES IGES gfe Qg Qgc td(on) tr td(off) tf td(on) tr td(off) tf tst EPULSE Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On delay time Rise time Turn-Off delay time Fall time Shoot Through Blocking Time Energy per Pulse mV/°C µA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C nA S nC VGE = 30V VGE = -30V VCE = 25V, ICE = 35A VCE = 200V, IC = 35A, VGE = 15V IC = 35A, VCC = 180V ns RG = 10Ω , L=250µH, LS= 150nH TJ = 25°C IC = 35A, VCC = 180V RG = 10Ω , L=250µH, LS= 150nH TJ = 150°C VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C VGE = 0V VCE = 30V ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 e Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– Notes:  Half sine wave with duty cycle = 0.25, ton=1µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 70A. 2 www.irf.com IRGB/S4055PbF 200 Top VGE = 18V V = 15V GE V = 12V GE VGE = 10V V = 8.0V GE V = 6.0V GE 200 Top V = 18V GE V = 15V GE VGE = 12V 150 Bottom 150 Bottom V = 10V GE VGE = 8.0V V = 6.0V GE ICE (A) ICE (A) 100 100 50 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V) Fig 1. Typical Output Characteristics @ 25°C 200 Top VGE = 18V V = 15V GE V = 12V GE VGE = 10V Fig 2. Typical Output Characteristics @ 75°C 200 Top V = 18V GE V = 15V GE VGE = 12V VGE = 10V V = 8.0V GE V = 6.0V GE 150 Bottom 150 Bottom V = 8.0V GE VGE = 6.0V ICE (A) ICE (A) 100 100 50 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V CE (V) Fig 3. Typical Output Characteristics @ 125°C 300 IC, Collector-to-Emitter Current (A) Fig 4. Typical Output Characteristics @ 150°C 20 T J = 25°C 250 200 150 100 5 IC = 35A T J = 150°C V CE (V) 15 TJ = 25°C TJ = 150°C 10 50 10µs PULSE WIDTH 0 0 5 10 15 VGE, Gate-to-Emitter Voltage (V) 0 5 10 V GE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGB/S4055PbF 120 100 IC, Collector Current (A) 300 280 Limited By Package Repetitive Peak Current (A) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 ton= 1µs Duty cycle = 0.25 Half Sine Wave 80 60 40 20 0 0 25 50 75 100 125 150 TC , Case Temperature (°C) 25 50 75 100 125 150 Case Temperature (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1000 900 Energy per Pulse (µJ) Fig 8. Typical Repetitive Peak Current vs. Case Temperature 1000 L = 220nH C = 0.4µF V CC = 240V L = 220nH C = variable Energy per Pulse (µJ) 900 800 700 800 700 600 25°C 500 400 300 160 170 180 190 200 210 220 230 Ic , Peak Collector Current (A) 100°C 100°C 600 500 25°C 400 300 200 150 160 170 180 190 200 210 220 230 240 V CE, Collector-to-Emitter Voltage (V) Fig 9. Typical EPULSE vs. Collector Current 1200 V CC = 240V 1000 Energy Pulse (µJ) Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage 1000 OPERATION IN THIS AREA LIMITED BY V CE(on) L = 220nH t = 1µs half sine C= 0.4µF 100 800 C= 0.3µF 600 C= 0.2µF 400 1µsec 10µsec IC (A) 100µsec 10 200 25 50 75 100 125 150 TJ, Temperature (ºC) 1 1 10 VCE (V) 100 1000 Fig 11. EPULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4 www.irf.com IRGB/S4055PbF 100000 VGS = 0V, f = 1 MHZ C ies = C ge + Cgd , C ce SHORTED C res = C gc C oes = C ce + Cgc 16 VGE, Gate-to-Emitter Voltage (V) 14 12 10 8 6 4 2 0 IC = 35A 200V 240V 10000 Capacitance (pF) Cies 1000 100 Coes Cres 10 0 50 100 150 200 0 25 50 75 100 125 150 V CE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nC) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thJC ) °C/W D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ2 τ3 τ4 τ4 Ri (°C/W) 0.00773 0.05408 0.23564 0.20216 τi (sec) 0.000009 0.000120 0.002452 0.022464 Ci= τi/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRGB/S4055PbF A RG DRIVER L C PULSE A VCC B PULSE B RG Ipulse DUT tST Fig 16a. tst and EPULSE Test Circuit Fig 16b. tst Test Waveforms VCE Energy IC Current 0 L DUT 1K VCC Fig 16c. EPULSE Test Waveforms Fig. 17 - Gate Charge Circuit (turn-off) 6 www.irf.com IRGB/S4055PbF Dimensions are shown in millimeters (inches) TO-220AB Package Outline TO-220AB Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSA  à GPUÃ8P9@à &'( 6TT@H7G@9ÃPIÃXXà (Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅ8Å I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqÃÃA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S 96U@Ã8P9@ `@6SÃÃ2Ã! X@@Fà ( GDI@Ã8 TO-220AB package is not recommended for Surface Mount Application. www.irf.com 7 IRGB/S4055PbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P9@Ã'!# 6TT@H7G@9ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S A$"T 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG 25 DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ 8 Q6SUÃIVH7@S A$"T 96U@Ã8P9@ QÃ2Ã9@TDBI6U@TÃG@69ÃÃAS@@ QSP9V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@ www.irf.com IRGB/S4055PbF D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/07 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/