IRGB4064DPBF

PD - 97113 IRGB4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 10A, TC = 100°C tsc > 5µs, Tjmax = 175°C n-channel C VCE(on) typ. = 1.6V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI E G C TO-220AB G C E Gate Collector Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25° PD @ TC =100° TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current d Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. 600 20 10 40 40 20 10 40 ±20 ±30 101 50 -55 to + 175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT e Junction-to-Case - Diode e Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount e Weight Min. ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 1.44 Max. 1.49 3.66 ––– 62 Units °C/W g 1 www.irf.com 11/28/06 IRGB4064DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. Typ. Max. Units 600 — — — — 4.0 — — — — — — — — 0.47 1.6 1.9 2.0 — -11 6.9 — 328 2.5 1.7 — — — 1.91 — — 6.5 — — 25 — 3.1 — ±100 nA V V S µA V V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage f Ref.Fig CT6 V/°C VGE = 0V, IC = 500µA (-55°C-175°C) IC = 10A, VGE = 15V, TJ = 25°C IC = 10A, VGE = 15V, TJ = 150°C IC = 10A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 275µA VCE = 50V, IC = 10A, PW = 80µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 10A IF = 10A, TJ = 175°C VGE = ±20V mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 5,6,7,9, 10 ,11 9,10,11,12 gfe ICES VFM IGES 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — 21 5.3 8.9 29 200 229 27 15 79 21 99 316 415 27 16 98 33 594 49 17 32 8.0 13 71 308 339 37 23 90 30 — — — — — — — — — — pF VGE = 0V VCC = 30V f = 1.0Mhz ns µJ ns µJ nC IC = 10A VGE = 15V VCC = 400V Conditions Ref.Fig 24 CT1 IC = 10A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH, TJ = 25°C Energy losses include tail & diode reverse recovery CT4 IC = 10A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH, TJ = 25°C CT4 IC = 10A, VCC = 400V, VGE = 15V RG=22Ω, L=1.0mH, TJ = 175°C fà 13,15 CT4 WF1,WF2 14,16 CT4 WF1,WF2 Energy losses include tail & diode reverse recovery IC = 10A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH, TJ = 175°C 22 TJ = 175°C, IC = 40A FULL SQUARE 5 — — — — 191 62 16 — — — — µs µJ ns A VCC = 480V, Vp =600V Rg = 22Ω, VGE = +15V to 0V VCC = 400V, Vp =600V Rg = 22Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 10A VGE = 15V, Rg = 22Ω, L=1.0mH 4 CT2 22, CT3 WF4 17,18,19 20,21 WF3 Notes: VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω. ‚ Pulse width limited by max. junction temperature. ƒRθ is measured at TJ approximately 90°C „Refer to AN-1086 for guidelines for measuring V(BR)CES safely 2 www.irf.com IRGB4064DPbF 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 180 TC (°C) Ptot (W) IC (A) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 180 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 Fig. 2 - Power Dissipation vs. Case Temperature 10µsec 10 IC (A) 100µsec IC A) 1msec DC 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VCE (V) 100 1000 10 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA, TC = 25°C; TJ ≤ 175°C 40 VGE = 18V 40 Fig. 4 - Reverse Bias SOA TJ = 175°C; VCE = 15V VGE = 18V 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 20 20 10 10 0 0 2 4 6 VCE (V) 8 10 0 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs www.irf.com 3 IRGB4064DPbF 40 VGE = 18V 30 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 IF (A) 80 70 60 50 40 30 -40°C 25°C 175°C ICE (A) 10 20 10 0 0 2 4 6 VCE (V) 8 10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VF (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 20 18 16 14 VCE (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 20 18 16 ICE = 5.0A VCE (V) 14 12 10 8 6 4 2 0 ICE = 5.0A ICE = 10A ICE = 20A 12 10 8 6 4 2 0 5 10 ICE = 10A ICE = 20A 15 VGE (V) 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 18 16 14 VCE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C 40 TJ = 25°C TJ = 175°C ICE = 5.0A ICE = 10A ICE = 20A ICE (A) 30 12 10 8 6 4 2 0 5 10 20 10 0 15 VGE (V) 20 0 5 10 VGE (V) 15 20 Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 4 www.irf.com IRGB4064DPbF 600 500 400 Energy (µJ) Swiching Time (ns) 100 1000 tdOFF tF tdON 300 200 100 0 0 4 EOFF 10 tR EON 8 12 I C (A) 16 20 24 1 0 4 8 12 16 20 24 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V. 350 300 250 200 150 100 50 0 0 25 50 75 100 125 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L=1mH; VCE= 400V RG= 22Ω; VGE= 15V 1000 EOFF EON Swiching Time (ns) Energy (µJ) 100 tdOFF tdON tF tR 10 0 25 50 75 100 125 RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V 24 Fig. 16- Typ. Switching Time vs. RG TJ = 175°C; L=1mH; VCE= 400V ICE= 10A; VGE= 15V 20 RG (Ω) 20 RG =10 Ω RG =22 Ω RG =47 Ω RG = 100 Ω 16 16 IRR (A) 12 IRR (A) 20 24 12 8 8 4 4 0 0 4 8 12 16 0 0 25 50 75 100 125 IF (A) RG (Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 175°C Fig. 18 - Typical Diode IRR vs. RG TJ = 175°C; IF = 10A www.irf.com 5 IRGB4064DPbF 20 900 800 47 Ω 22Ω 10Ω 20A 15 700 QRR (nC) 100Ω IRR (A) 10A 600 500 5.0A 400 10 5 0 200 400 600 800 1000 1200 diF /dt (A/µs) 300 0 500 1000 1500 diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 175°C 300 250 200 IRR (A) Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V; TJ = 175°C 16 RG = 10Ω RG = 22Ω RG = 47Ω 80 Tsc Isc 70 60 50 40 30 20 10 0 8 10 12 VGE (V) 14 16 Current (A) 14 12 Time (µs) 10 8 6 4 2 0 150 100 RG = 100Ω 50 0 0 2 4 6 8 10 12 14 16 18 20 22 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 175°C 1000 Fig. 22- Typ. VGE vs Short Circuit Time VCC=400V, TC =25°C 16 Cies 14 12 300V 400V Capacitance (pF) 100 VGE (V) 10 8 6 Coes 10 Cres 4 2 1 0 20 40 60 80 100 0 0 4 8 12 16 20 24 Q G, Total Gate Charge (nC) Fig. 23- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz VCE (V) Fig. 24 - Typical Gate Charge vs. VGE ICE = 10A, L=600µH 6 www.irf.com IRGB4064DPbF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ1 τ2 τ3 τ4 τ4 τ 0.1 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 Ci= τi/Ri Ci i/Ri Ri (°C/W) τι (sec) 0.007362 0 0.342317 0.000048 0.647826 0.000192 0.493231 0.001461 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.01 1E-006 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 Ri (°C/W) τι (sec) τ1 1.939783 0.000975 1.721867 0.006135 0.01 Ci= τi/ Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGB4064DPbF L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - Typical Filter Circuit for V(BR)CES Measurement 8 www.irf.com IRGB4064DPbF 500 tf 400 90% ICE 10 TEST CURRENT 350 25 tr 8 275 300 VCE (V) 6 ICE (A) VCE (V) 200 90% test current 20 200 5% ICE 4 125 10 10% test current 5% VCE 100 5% VCE Eoff Loss 2 50 5 0 -0.04 0 0.16 0.06 time(µs) -25 -0.1 Eon Loss 0.1 time (µs) 0 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 10 -25 -100 -175 Vce (V) 110 90 70 450 QRR tRR 5 0 VC E 375 300 225 150 75 0 Ice (A) VF (V) -250 -325 -400 -475 -0.05 -5 Peak IRR IF (A) 50 30 10 -10 -5 0 IC 10% Peak IRR -10 -15 -20 0.15 time (µS) 0.35 5 Time (uS) 10 WF.3- Typ. Reverse Recovery Waveform @ TJ = 175°C using CT.4 WF.4- Typ. Short Circuit Waveform @ TJ = 25°C using CT.3 www.irf.com ICE (A) 15 9 IRGB4064DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 IN THE ASS EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead - Free" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 0 = 2000 WEEK 19 LINE C TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/06 10 www.irf.com