IRGB4B60KD1PBF

PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C E n-channel VCE(on) typ. = 2.1V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. D2Pak TO-220 IRGB4B60KD1PbF IRGS4B60KD1 TO-262 IRGSL4B60KD1 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 11 7.6 Units V A c 22 22 11 6.7 22 ±20 63 31 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Storage Temperature Range, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state) Min. ––– ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– ––– 1.44 Max. 2.4 6.1 ––– 62 40 ––– Units °C/W d g www.irf.com 1 8/10/04 IRGB4B60KD1PbF, IRGS/SL4B60KD1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units — 0.28 2.1 2.5 2.6 4.5 -8.1 1.7 1.0 136 722 1.4 1.3 1.2 — — — 2.5 2.8 2.9 5.5 — — 150 600 2400 2.0 1.8 1.7 ±100 nA V µA V V Conditions VGE = 0V, IC = 500µA Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — — VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop — — 3.5 — — — — — — — — IGES Gate-to-Emitter Leakage Current — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 4.0A, VGE = 15V, TJ = 25°C V IC = 4.0A, VGE = 15V, TJ = 150°C IC = 4.0A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 250µA 5,6,7 9,10,11 9,10,11 12 mV/°C VCE = VGE, IC = 1mA (25°C-150°C) S VCE = 50V, IC = 4.0A, PW = 80µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C IF = 4.0A IF = 4.0A, TJ = 150°C IF = 4.0A, TJ = 175°C VGE = ±20V 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — 12 1.7 6.5 73 47 120 22 18 100 66 130 83 220 22 18 120 79 190 25 6.2 — — — 80 53 130 28 23 110 80 150 140 280 27 22 130 89 — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 4.0A VCC = 400V VGE = 15V Conditions Ref.Fig. 23 CT1 IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C CT4 e CT4 CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 e 22 FULL SQUARE 10 — — — — 81 93 6.3 — 100 — 7.9 µs µJ ns A f = 1.0MHz TJ = 150°C, IC = 22A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 100Ω TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 4.0A, L = 2.5mH VGE = 15V, RG = 100Ω 4 CT2 CT3 WF4 17,18,19 20,21 CT4,WF3 Note  to ƒ are on page 16 2 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 70 60 50 Ptot (W) 12 10 8 IC (A) 40 30 20 10 0 6 4 2 0 0 20 40 60 80 100 120 140 160 180 T C (°C) 0 20 40 60 80 100 120 140 160 180 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 100µs 10 IC A) IC (A) 1 1ms 0.1 10ms DC 1 0.01 0 1 10 100 1000 10000 VCE (V) 0 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGB4B60KD1PbF, IRGS/SL4B60KD1 30 25 20 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 30 25 20 15 10 5 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 15 10 5 0 0 2 4 6 VCE (V) 8 10 12 0 2 4 6 VCE (V) 8 10 12 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 25 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 35 30 25 IF (A) ICE (A) 15 20 15 10 -40°C 25°C 150°C 10 5 5 0 0 2 4 6 VCE (V) 8 10 12 0 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 4 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 2.0A ICE = 4.0A ICE = 8.0A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 2.0A ICE = 4.0A ICE = 8.0A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 ID, Drain-to-Source Current (Α) 30 16 14 VCE (V) 25 T J = 25°C 20 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 2.0A ICE = 4.0A ICE = 8.0A 15 TJ = 150°C 10 5 0 15 20 0 5 10 15 20 VGS , Gate-to-Source Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 360V; tp = 10µs www.irf.com 5 IRGB4B60KD1PbF, IRGS/SL4B60KD1 350 300 Swiching Time (ns) 1000 250 Energy (µJ) EON td OFF 100 tF tdON 200 150 100 50 0 1 2 3 4 5 6 7 8 9 10 IC (A) EOFF 10 tR 1 0 2 4 6 8 10 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=2.5mH; VCE= 400V, RG= 100Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=2.5mH; VCE= 400V RG= 100Ω; VGE= 15V 350 300 250 1000 EON 200 150 100 50 0 0 100 200 300 400 500 Swiching Time (ns) Energy (µJ) 100 tdOFF tF EOFF tdON tR 10 0 100 200 300 400 500 RG ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V 6 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 10 9 8 7 7 RG = 100Ω RG = 200Ω RG = 330Ω RG = 470Ω 6 IRR (A) 6 5 4 3 2 1 0 1 2 3 4 5 6 IRR (A) 5 4 3 2 7 8 9 10 0 100 200 300 400 500 IF (A) RG (Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 4.0A 7 700 600 200Ω 500 Q RR (µC) 6 100Ω 8.0A 330Ω 470Ω IRR (A) 5 400 300 4.0A 4 3 2.0A 200 100 100 150 200 250 300 2 0 50 100 150 200 250 300 350 400 diF /dt (A/µs) diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; IF = 4.0A; TJ = 150°C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 7 IRGB4B60KD1PbF, IRGS/SL4B60KD1 150 125 100Ω 200Ω 330Ω 470 Ω 100 Energy (µJ) 75 50 25 0 0 1 2 3 4 5 6 7 8 9 10 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C 1000 16 Cies 14 300V 12 400V VGE (V) 40 60 80 100 Capacitance (pF) 100 Coes 10 8 6 4 2 10 Cres 1 0 20 0 0 2 4 6 8 10 12 14 VCE (V) Q G , Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 4.0A; L = 3150µH 8 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.0429 0.000001 1.3417 1.0154 0.000178 0.000627 0.1 τ1 τ2 Ci= τi /Ri Ci i/Ri 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.02 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Ri (°C/W) 0.0904 1.6662 3.5994 0.7454 τi (sec) 0.000003 0.000117 0.001610 0.048846 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGB4B60KD1PbF, IRGS/SL4B60KD1 L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 700 tf 600 Vce 500 90% Ice 400 Vce (V) 300 200 Ice 100 0 Eoff Loss -100 0.4 0.6 0.8 Time (uS) 1 1.2 -2 -100 0.35 14 12 10 8 Ice (A) Vce (V) 700 600 500 400 300 200 100 0 tr Vce Ice 90% Ice 10% Ice 5% Vce 14 12 10 8 6 4 2 0 -2 0.55 Time (uS) 0.65 Ice (A) I (A) ICE (A) 5% Vce 5% Ice 6 4 2 0 Eon Loss 0.45 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 100 tR R 6 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 400 350 300 40 35 30 25 20 15 10 5 0 -5 30 40 50 Time (uS) 60 70 QR R Vce 0 4 -100 2 250 -200 Vf (V) 0 If (A) VCE (V) Ice 200 150 100 -300 Peak IR R 10% Peak IR R -2 -400 -4 50 -500 -6 0 -50 -600 0.05 0.15 Time (uS) 0.25 -8 0.35 Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com 11 IRGB4B60KD1PbF, IRGS/SL4B60KD1 TO-220AB Package Outline 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 12 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT CODE 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD -F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 W E E K 02 A = AS S E M B L Y S IT E CO D E www.irf.com 13 IRGB4B60KD1PbF, IRGS/SL4B60KD1 TO-262 Package Outline TO-262 Part Marking Information E X AMP L E : T H IS IS AN IR L 3 1 03 L L OT COD E 17 8 9 AS S E M B L E D ON WW 19 , 1 9 97 IN T H E AS S E MB L Y L IN E "C" N ote: "P " in as s em bly line pos ition indicates "L ead-F ree" IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U MB E R D AT E COD E Y E AR 7 = 1 9 97 WE E K 19 L IN E C OR IN T E R N AT ION AL R E CT IF I E R L OGO AS S E M B L Y L OT COD E P AR T N U MB E R D AT E COD E P = D E S I GN AT E S L E AD -F R E E P R OD U CT (OP T ION AL ) Y E AR 7 = 1 9 9 7 WE E K 19 A = AS S E MB L Y S IT E COD E 14 www.irf.com IRGB4B60KD1PbF, IRGS/SL4B60KD1 D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 100Ω. ‚ When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ƒ Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 www.irf.com 15