IRGB4B60KPBF

PD - 95643 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as a Lead-Free. C IRGB4B60KPbF IRGS4B60K IRGSL4B60K VCES = 600V IC = 6.8A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 2.1V D2Pak TO-220 IRGB4B60KPbF IRGS4B60K TO-262 IRGSL4B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Max. 600 12 6.8 Units V A c 24 24 ±20 63 31 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient Weight Junction-to-Ambient (PCB Mount, steady state) Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 2.4 ––– 62 40 ––– Units °C/W d g www.irf.com 1 7/26/04 IRGB4B60KPbF IRGS/SL4B60K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units — 0.28 2.1 2.5 2.6 4.5 -8.1 1.7 1.0 54 300 — — — 2.5 2.8 2.8 5.5 — — 150 300 800 ±100 nA µA V V Conditions VGE = 0V, IC = 500µA Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — — VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Collector-to-Emitter Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current — — 3.5 — — — — — — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 4.0A, VGE = 15V, TJ = 25°C V IC = 4.0A, VGE = 15V, TJ = 150°C IC = 4.0A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 250µA 5,6,7 9,10,11 9,10,11 12 mV/°C VCE = VGE, IC = 1mA (25°C-150°C) S VCE = 50V, IC = 4.0A, PW = 80µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — — 12 1.7 6.5 73 47 120 22 18 100 66 130 83 220 22 18 120 79 190 25 6.2 — — — 80 53 130 28 23 110 80 150 140 280 27 22 130 89 — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 4.0A VCC = 400V VGE = 15V Conditions Ref.Fig. 23 CT1 IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C CT4 e IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 25°C IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 CT4 e IC = 4.0A, VCC = 400V VGE = 15V, RG = 100Ω, L = 2.5mH TJ = 150°C 22 FULL SQUARE 10 — — µs f = 1.0MHz TJ = 150°C, IC = 24A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 100Ω TJ = 150°C, Vp = 600V, RG = 100Ω VCC=360V,VGE = +15V to 0V 4 CT2 CT3 WF3 Note  to ƒ are on page 16 2 www.irf.com IRGB4B60KPbF IRGS/SL4B60K 12 10 8 6 4 70 60 50 Ptot (W) 0 20 40 60 80 100 120 140 160 180 T C (°C) IC (A) 40 30 20 2 0 10 0 0 20 40 60 80 100 120 140 160 180 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 100µs IC (A) IC A) 10 1 1ms 0.1 10ms 1 DC 0.01 0 1 10 100 1000 10000 VCE (V) 0 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGB4B60KPbF IRGS/SL4B60K 30 25 20 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 30 25 20 15 10 5 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 15 10 5 0 0 2 4 6 VCE (V) 8 10 12 0 2 4 6 VCE (V) 8 10 12 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 25 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 20 ICE (A) 15 10 5 0 0 2 4 6 VCE (V) 8 10 12 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 4 www.irf.com IRGB4B60KPbF IRGS/SL4B60K 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 2.0A ICE = 4.0A ICE = 8.0A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 2.0A ICE = 4.0A ICE = 8.0A 12 10 8 6 4 2 0 Fig. 8 - Typical VCE vs. VGE TJ = -40°C Fig. 9 - Typical VCE vs. VGE TJ = 25°C 20 18 ID, Drain-to-Source Current (Α) 30 16 14 VCE (V) 25 T J = 25°C 20 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 2.0A ICE = 4.0A ICE = 8.0A 15 TJ = 150°C 10 5 0 15 20 0 5 10 15 20 VGS , Gate-to-Source Voltage (V) Fig. 10 - Typical VCE vs. VGE TJ = 150°C Fig. 11 - Typ. Transfer Characteristics VCE = 360V; tp = 10µs www.irf.com 5 IRGB4B60KPbF IRGS/SL4B60K 350 300 Swiching Time (ns) 1000 250 Energy (µJ) EON 100 td OFF tF tdON 10 200 150 100 50 0 1 2 3 4 5 6 7 8 9 10 IC (A) EOFF tR 1 0 2 4 6 8 10 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150°C; L=2.5mH; VCE= 400V, RG= 100Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150°C; L=2.5mH; VCE= 400V RG= 100Ω; VGE= 15V 350 300 250 1000 EON 200 150 100 50 0 0 100 200 300 400 500 Swiching Time (ns) Energy (µJ) tdOFF 100 EOFF tF tdON tR 10 0 100 200 300 400 500 RG ( Ω) RG ( Ω) Fig. 14 - Typ. Energy Loss vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V Fig. 15 - Typ. Switching Time vs. RG TJ = 150°C; L=2.5mH; VCE= 400V ICE= 4.0A; VGE= 15V 6 www.irf.com IRGB4B60KPbF IRGS/SL4B60K 1000 16 Cies 14 300V 12 400V 10 Capacitance (pF) 100 Coes VGE (V) 40 60 80 100 8 6 4 2 10 Cres 1 0 20 0 0 2 4 6 8 10 12 14 VCE (V) Q G , Total Gate Charge (nC) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE ICE = 4.0A; L = 3150µH 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ri (°C/W) τi (sec) 0.0429 0.000001 1.3417 1.0154 0.000178 0.000627 τ1 τ2 Ci= τi /Ri Ci= i/Ri 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRGB4B60KPbF IRGS/SL4B60K L L DUT 0 VCC 80 V + - DUT 480V 1K Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT Driver DC L 360V - 5V DUT / DRIVER Rg VCC DUT Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRGB4B60KPbF IRGS/SL4B60K 700 tf 600 Vce 500 90% Ice 400 5% Vce Vce (V) Ice (A) Vce (V) 14 12 10 8 6 4 Ice 2 0 Eoff Loss -2 0.4 0.6 0.8 Time (uS) 1 1.2 700 600 500 400 300 200 100 0 -100 0.35 Eon Loss 0.45 0.55 Time (uS) 0.65 tr Vce Ice 90% Ice 10% Ice 5% Vce 14 12 10 8 6 4 2 0 -2 Ice (A) 300 200 100 0 -100 5% Ice Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 400 350 300 250 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 40 35 30 25 20 15 10 5 0 -5 (A) ICE (A) I Vce VCE (V) Ice 200 150 100 50 0 -50 30 40 50 Time (uS) 60 70 Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com 9 IRGB4B60KPbF IRGS/SL4B60K TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 11234LEAD ASSIGNMENTS IGBTs, CoPACK 14.09 (.555) 13.47 (.530) 2GATE DRAIN 3DRAINSOURCE SOURCE 4 - DRAIN DRAIN 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR 4.06 (.160) 3.55 (.140) 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 10 www.irf.com D2Pak Package Outline Dimensions are shown in millimeters (inches) IRGB4B60KPbF IRGS/SL4B60K D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MBL E D ON WW 02, 2000 IN T H E AS S E MB LY LINE "L" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E RNAT IONAL RE CT IF IE R LOGO AS S E MB LY LOT CODE PART NUMB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 LINE L OR INT E RNAT IONAL RE CT IFIER LOGO AS S E MBL Y L OT CODE PART NU MBE R F 530S DAT E CODE P = DES IGNATE S LE AD-F R EE PRODUCT (OPT IONAL ) YEAR 0 = 2000 WE EK 02 A = AS S EMB LY S IT E CODE www.irf.com 11 IRGB4B60KPbF IRGS/SL4B60K TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPLE : T HIS IS AN IRL 3103L L OT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-F ree" INT E R NAT IONAL RE CT IF IE R LOGO AS S E MB LY LOT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 LINE C OR INT E R NAT IONAL R E CT IF IE R LOGO AS S E MB L Y LOT CODE PAR T NU MB E R DAT E CODE P = DE S IGNAT E S L E AD-F RE E PR ODU CT (OPT IONAL) YE AR 7 = 1997 WE E K 19 A = AS S E MB L Y S IT E CODE 12 www.irf.com D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) IRGB4B60KPbF IRGS/SL4B60K 0.368 (.0145) 0.342 (.0135) F EED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) F EED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 50Ω. ‚ When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ƒ Energy losses include "tail" and diode reverse recovery, using Diode FD059H06A5. TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 www.irf.com 13 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/