IRGI4060DPBF

PD - 97153 IRGI4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses 5μs SCSOA Square RBSOA 100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 7.5A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.50V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation • Low EMI E C G TO-220AB Full-Pak G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC@ TC = 25°C IC@ TC = 100°C ICM ILM IF@TC=25°C IF@TC=100°C IFM VGE PD @ TC =25°C PD @ TC =100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 Screw Max. 600 14 7.5 23 30 14 7.5 30 ± 20 ± 30 37 15 -55 to + 150 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V c A d V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight e e Min. — — Typ. — — Max. 3.40 6.10 — Units °C/W g e — — — 0.5 — 65 — 2.0 1 www.irf.com 4/17/09 IRGI4060DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ΔV(BR)CES/ΔTJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.66 1.50 1.75 1.81 -12 5 1.0 400 2.18 1.60 — Max. — — 1.72 — — 6.5 — — 25 — 3.00 — ±100 Units V V/°C V V S μA μA V nA Conditions VGE = 0V,Ic =100 μA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage f o VGE = 0V, Ic = 250 μA ( -55 -150 C ) IC = 7.5A, VGE = 15V, TJ = 25°C IC = 7.5A, VGE = 15V, TJ = 125°C IC = 7.5A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 250 μA o f VCE(on) VGE(th) ΔVGE(th)/ΔTJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current mV/°C VCE = VGE, IC = 1.0mA ( -55 -150 C ) VCE = 50V, IC = 7.5A, PW =80μs VGE = 0V,VCE = 600V VGE = 0v, VCE = 600V, TJ =150°C IF = 7.5A IF = 7.5A, TJ = 150°C VGE = ± 20 V gfe ICES VFM IGES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Min. — — — — — — — — — — — — — — — — — — — — Typ. 19 4.3 8.3 47 141 188 29 16 101 28 107 196 304 28 17 118 53 537 47 16 Max. 29 6 12 89 248 337 38 25 112 37 — — — — — — — — — — Units IC = 7.5A nC VCC = 400V VGE = 15V Conditions IC = 7.5A, VCC = 400V, VGE = 15V μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C Energy losses include tail and diode reverse recovery IC = 7.5A, VCC = 400V ns RG = 47Ω, L=1mH, LS= 150nH TJ = 25°C IC = 7.5A, VCC = 400V, VGE = 15V μJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 150°C Energy losses include tail and diode reverse recovery IC = 7.5A, VCC = 400V ns RG = 47Ω, L=1mH, LS= 150nH TJ = 150°C VGE = 0V pF VCC = 30V f = 1Mhz TJ = 150°C, IC = 30A VCC = 480V, Vp =600V Rg = 47Ω, VGE = +20V to 0V VCC = 400V, Vp =600V RG = 47Ω, VGE = +15V to 0V TJ = 150 C VCC = 400V, IF = 7.5A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH o FULL SQUARE SCSOA Erec trr Irr Short Circuit Safe Operating Area Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current 5 — — — — 102 73 11 — — — — μs μJ ns A Notes: VCC = 80% (VCES), VGE = 20V, L = 28 μH, RG = 47 Ω ‚ Pulse width limited by max. junction temperature. ƒRθ is measured at TJ approximately 90°C „Refer to AN-1086 for guidelines for measuring V(BR)CES safely 2 www.irf.com IRGI4060DPbF 16 14 12 Ptot (W) 40 30 10 IC (A) 8 6 4 2 0 0 20 40 60 80 100 120 140 160 TC (°C) 20 10 0 0 20 40 60 80 100 120 140 160 TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 Fig. 2 - Power Dissipation vs. Case Temperature 10 100 μs 1ms 10 μs 10 IC (A) 1 DC 0.1 IC A) 1 0.01 1 10 VCE (V) 100 1000 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA, TC = 25°C; TJ ≤ 150°C 28 24 20 ICE (A) Fig. 4 - Reverse Bias SOA TJ = 150°C; VCE = 15V 28 24 20 ICE (A) 16 12 8 4 0 0 2 4 6 VCE (V) VGE = 18V 16 12 8 4 0 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 8 10 0 2 4 6 VCE (V) 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp