IRGI4062DPBF

PD - 97347 IRGI4062DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 12A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 150°C n-channel C VCE(on) typ. = 1.34V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G Gate E C G TO-220 Full-Pak C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 600 22 12 44 44 22 12 44 ±20 ±30 48 19 -55 to +150 Units V c d A Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– Max. 2.6 4.2 ––– 65 Units °C/W 1 www.irf.com 10/14/08 IRGI4062DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.80 1.34 1.49 1.54 — -14 13 — — 1.70 1.22 — Max. Units — — 1.58 — — 6.5 — — 25 250 2.05 — ±100 nA V V V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 1mA (-55°C-150°C) IC = 12A, VGE = 15V, TJ = 25°C V IC = 12A, VGE = 15V, TJ = 125°C IC = 12A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 700µA e Ref.Fig CT6 CT6 5,6,7 9,10,11 VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 9, 10, 11, 12 gfe ICES VFM IGES mV/°C VCE = VGE, IC = 1.0mA (-55°C - 150°C) S VCE = 50V, IC = 12A, PW = 80µs µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IF = 12A IF = 12A, TJ = 150°C VGE = ±20V 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 48 13 18 31 183 214 41 18 100 27 130 275 405 39 16 119 39 1528 126 39 Max. Units 72 20 27 131 283 414 53 25 110 35 — — — — — — — — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 12A VGE = 15V VCC = 400V Conditions Ref.Fig 24 CT1 IC = 12A, VCC = 400V, VGE = 15V RG = 10Ω , L = 0.13mH, TJ = 25°C Energy losses include tail & diode reverse recovery CT4 IC = 12A, VCC = 400V, VGE = 15V RG = 10Ω , L = 0.13mH, TJ = 25°C CT4 IC = 12A, VCC = 400V, VGE=15V RG=10Ω , L= 0.13mH, TJ = 150°C IC = 12A, VCC = 400V, VGE = 15V RG = 10Ω , L = 0.13mH TJ = 150°C eà 13, 15 CT4 WF1, WF2 14, 16 CT4 WF1 WF2 23 Energy losses include tail & diode reverse recovery f = 1.0Mhz TJ = 150°C, IC = 44A VCC = 480V, Vp =600V Rg = 100Ω, VGE = +15V to 0V 4 CT2 FULL SQUARE 5 — — — — 362 56 30 — — — — µs µJ ns A VCC = 400V, Vp =600V Rg = 100Ω, VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 12A VGE = 15V, Rg = 10Ω , L = 0.13mH 22, CT3 WF4 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGI4062DPbF 25 50 20 40 Ptot (W) 15 IC (A) 30 10 20 5 10 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 Fig. 2 - Power Dissipation vs. Case Temperature 100 10µsec 10 100µsec IC (A) IC (A) 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 VCE (V) 100 1000 DC 10 1 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 150°C; VGE =15V 120 100 80 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 100 80 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) ICE (A) 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs VCE (V) VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs www.irf.com 3 IRGI4062DPbF 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 120 100 80 -40°c 25°C 150°C ICE (A) IF (A) 80 60 40 20 0 0 2 4 6 8 10 12 14 60 40 20 0 0.0 1.0 2.0 VF (V) 3.0 4.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 20 18 16 14 ICE = 6.0A ICE = 12A ICE = 24A Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 20 18 16 14 VCE (V) 10 8 6 4 2 0 5 10 VGE (V) VCE (V) 12 12 10 8 6 4 2 0 ICE = 48A ICE = 6.0A ICE = 12A ICE = 24A ICE = 48A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 18 16 14 ICE = 6.0A ICE = 12A 100 80 120 Fig. 10 - Typical VCE vs. VGE TJ = 25°C T J = 25°C T J = 150°C VCE (V) 10 8 6 4 2 0 5 10 VGE (V) ICE (A) 20 12 ICE = 24A ICE = 48A 60 40 20 0 15 0 5 10 VGE (V) 15 20 Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 4 www.irf.com IRGI4062DPbF 600 500 400 1000 Swiching Time (ns) Energy (µJ) EOFF 300 200 EON 100 0 0 5 10 IC (A) 15 20 25 td OFF 100 tdON tF 10 0 5 10 IC (A) tR 15 20 25 Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 0.13mH; VCE = 400V, RG = 10Ω; VGE = 15V 600 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 0.13mH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 500 Energy (µJ) 400 EOFF 300 Swiching Time (ns) tdOFF tdON 100 200 EON 100 0 25 50 75 100 125 tF tR 10 0 25 50 75 100 125 RG ( Ω) Rg ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 0.13mH; VCE = 400V, ICE = 12A; VGE = 15V 35 30 25 IRR (A) Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 0.13mH; VCE = 400V, ICE = 12A; VGE = 15V 30 R G = 10Ω 25 R G = 22Ω IRR (A) 20 20 R G = 47Ω 15 RG = 100Ω 10 5 5 10 15 IF (A) 20 25 15 10 5 0 25 50 75 100 125 RG (Ω) Fig. 17 - Typ. Diode IRR vs. IF TJ = 150°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 150°C www.irf.com 5 IRGI4062DPbF 30 3500 3000 2500 QRR (µC) 25 24A 10Ω 47Ω 100Ω 22Ω 12A IRR (A) 20 2000 1500 1000 15 10 500 0 6.0A 5 0 200 400 600 800 1000 diF /dt (A/µs) 0 200 400 600 800 1000 diF /dt (A/µs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 12A; TJ = 150°C 400 350 300 R G = 10Ω Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 150°C 280 240 200 16 14 R G = 22Ω Tsc Isc Energy (µJ) Time (µs) 250 200 150 100 50 0 5 10 12 10 8 Current (A) R G = 47Ω 160 120 80 40 8 10 12 14 16 18 VGE (V) RG = 100Ω 6 4 15 IF (A) 20 25 Fig. 21 - Typ. Diode ERR vs. IF TJ = 150°C 10000 Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 VGE, Gate-to-Emitter Voltage (V) Cies 1000 14 12 10 8 6 4 2 0 V CES = 300V V CES = 480V Capacitance (pF) 100 Coes 10 Cres 1 0 100 200 300 400 500 VCE (V) 0 5 10 15 20 25 30 35 40 45 50 Q G, Total Gate Charge (nC) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 12A; L = 1700µH 6 www.irf.com IRGI4062DPbF 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τJ τJ τ1 0.1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.167978 0.242228 0.922659 1.268352 0.000080 0.000772 0.059650 1.063 τi (sec) τ1 τ2 τ3 τ4 0.01 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.231912 0.956436 1.348286 1.663366 0.000145 0.001589 0.05534 1.0859 τi (sec) τ1 τ2 τ3 τ4 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGI4062DPbF L L 0 D UT 1K VC C 80 V Rg DU T 4 80V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T L 4x DC 360V - 5V DU T / D RIVER Rg DUT VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM C force 400µH D1 10K C sense DUT Rg VCC G force DUT 0.0075µ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com IRGI4062DPbF 600 tf 500 400 VCE (V) 300 200 100 0 -0.1 Eoff Loss 90% ICE 12 10 8 6 VCE (V) 450 400 350 300 250 tr TEST CURRENT 90% test current 10% test current 35 30 25 20 15 10 I CE (A) 5% ICE 5% VCE 4 2 0 -2 -4 0.3 I CE (A) 200 150 100 50 0 -50 -100 -0.1 0 time (µs) 5% VCE 5 0 Eon Loss -5 0.1 0.2 0 0.1 time(µs) 0.2 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 75 0 -75 -150 -225 VF (V) -300 -375 -450 -525 -600 -675 -0.10 0.00 Peak IRR 10% Peak IRR 25 QRR tRR 20 15 10 5 0 I F (A) -5 VCE (V) 500 250 400 VCE 300 ICE 200 200 150 ICE (A) -10 -15 -20 -25 -30 -35 -40 0.20 100 100 50 0 0 0.10 -100 -5.00 0.00 5.00 -50 10.00 time (µS) time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com 9 IRGI4062DPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#Bà XDUCÃ6TT@H7G`à GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃXXÃ!#Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S DSAD'#B !#F Ã"#ÃÃÃÃÃÃÃÃÃ"! I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ!# GDI@ÃF TO-220 Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/08 10 www.irf.com