IRGI4064DPBF

PD - 97397A IRGI4064DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses 5 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM  Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 8.0A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 150°C n-channel C VCE(on) typ. = 1.51V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G Gate E C G TO-220 Full-Pak C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 600 15 8.0 24 32 15 8.0 32 ±20 ±30 38 15 -55 to +150 Units V c A d Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– Max. 3.29 6.1 ––– 65 Units °C/W 1 www.irf.com 10/01/09 IRGI4064DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.52 1.51 1.73 1.80 — -12 6.5 — — 2.23 1.64 — Max. Units — — 1.80 — — 6.5 — — 20 250 3.1 — ±100 nA V V S µA V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage e Ref.Fig CT6 CT6 5,6,7 9,10,11 V/°C VGE = 0V, IC = 100µA (-55°C-150°C) IC = 8.0A, VGE = 15V, TJ = 25°C V IC = 8.0A, VGE = 15V, TJ = 125°C IC = 8.0A, VGE = 15V, TJ = 150°C VCE = VGE, IC = 275µA VCE = 50V, IC = 8.0A, PW = 60µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IF = 8.0A IF = 8.0A, TJ = 150°C VGE = ±20V VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 9, 10, 11, 12 mV/°C VCE = VGE, IC = 1.0mA (-55°C - 150°C) gfe ICES VFM IGES 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 21 4.8 8.6 20 125 145 29 12 84 18 51 205 256 28 12 101 27 600 45 16 Max. Units 32 7.2 13 25 137 162 38 17 90 23 — — — — — — — — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 8.0A VGE = 15V VCC = 400V Conditions Ref.Fig 24 CT1 IC = 8.0A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH, TJ = 25°C Energy losses include tail & diode reverse recovery CT4 IC = 8.0A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH, TJ = 25°C CT4 IC = 8.0A, VCC = 400V, VGE=15V RG=22Ω, L=1.0mH, TJ = 150°C eà 13, 15 CT4 WF1, WF2 14, 16 CT4 WF1 WF2 23 Energy losses include tail & diode reverse recovery IC = 8.0A, VCC = 400V, VGE = 15V RG = 22Ω, L = 1.0mH TJ = 150°C f = 1.0Mhz TJ = 150°C, IC = 32A VCC = 480V, Vp =600V Rg = 90Ω, VGE = +20V to 0V 4 CT2 FULL SQUARE 5 — — — — 147 48 14 — — — — µs µJ ns A VCC = 400V, Vp =600V Rg = 90Ω, VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 8.0A VGE = 15V, Rg = 22Ω , L = 1.0mH 22, CT3 WF4 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 90Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGI4064DPbF 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 20 40 60 80 100 120 140 160 T C (°C) 10 30 40 Ptot (W) 10µsec 100µsec IC (A) 20 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 Fig. 2 - Power Dissipation vs. Case Temperature 100 10 IC (A) IC (A) 1000 1msec 1 Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 VCE (V) 100 DC 10 1 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 150°C; VGE =15V 70 60 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 40 Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE = 20V ICE (A) ICE (A) 40 30 20 10 0 0 1 2 3 4 5 6 30 20 10 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs VCE (V) VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs www.irf.com 3 IRGI4064DPbF 60 50 40 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V IF (A) 70 60 50 40 30 20 10 0 -40°c 25°C 150°C ICE (A) 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 0.0 1.0 2.0 3.0 4.0 5.0 VCE (V) VF (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 18 16 14 12 Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 18 16 14 12 ICE = 3.7A ICE = 8.0A ICE = 15A VCE (V) VCE (V) 10 8 6 4 2 0 5 10 VGE (V) ICE = 3.7A ICE = 8.0A ICE = 15A 10 8 6 4 2 0 5 10 VGE (V) 15 20 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 18 16 14 12 Fig. 10 - Typical VCE vs. VGE TJ = 25°C 50 40 VCE (V) 8 6 4 2 0 5 10 VGE (V) ICE = 15A ICE (A) 10 ICE = 3.7A ICE = 8.0A 30 T J = -40°C T J = 25°C T J = 150°C 20 10 0 15 20 2 4 6 8 10 12 14 16 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 4 www.irf.com IRGI4064DPbF 400 350 300 Swiching Time (ns) 1000 EOFF tdOFF tF tdON 10 tR Energy (µJ) 250 200 150 100 50 0 2 4 6 8 10 12 14 16 EON 100 1 2 4 6 8 10 12 14 16 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 22Ω; VGE = 15V 300 250 200 Energy (µJ) Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 22Ω; VGE = 15V 1000 EOFF Swiching Time (ns) 150 100 50 0 0 20 40 60 80 100 EON tdOFF 100 tdON tF 10 0 20 40 tR 60 80 100 Rg ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8.0A; VGE = 15V 20 18 16 14 RG = 10Ω Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8.0A; VGE = 15V 16 14 R G = 22Ω IRR (A) 12 10 8 6 4 2 4 6 8 10 R G = 47Ω IRR (A) 16 12 10 RG = 100Ω 8 6 12 14 0 25 50 RG (Ω) 75 100 IF (A) Fig. 17 - Typ. Diode IRR vs. IF TJ = 150°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 150°C www.irf.com 5 IRGI4064DPbF 16 600 14 500 QRR (µC) 15A 22Ω 10Ω IRR (A) 12 400 100Ω 300 47Ω 7.8A 10 8 3.8A 6 200 400 600 diF /dt (A/µs) 800 1000 200 0 200 400 600 800 1000 1200 diF /dt (A/µs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 8.0A; TJ = 150°C 250 R G = 10Ω R G = 22Ω Energy (µJ) Time (µs) Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 150°C 18 16 14 12 10 8 20 6 4 0 8 10 12 14 16 18 VGE (V) 100 200 Tsc Isc 80 150 R G = 47Ω 100 RG = 100Ω 60 Current (A) 40 50 0 2 4 6 8 10 12 14 16 IF (A) Fig. 21 - Typ. Diode ERR vs. IF TJ = 150°C 1000 Cies Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 14 12 10 8 6 4 2 0 V CES = 300V V CES = 480V Capacitance (pF) 100 Coes 10 Cres 1 0 50 100 150 200 250 300 350 400 VCE (V) VGE, Gate-to-Emitter Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 22 Q G, Total Gate Charge (nC) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 8.0A; L = 1900µH 6 www.irf.com IRGI4064DPbF 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.3188 0.5528 1.0389 1.3807 0.000064 0.000607 0.032948 0.9865 τi (sec) 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 D = 0.50 Thermal Response ( Z thJC ) 1 0.20 0.10 0.05 0.02 0.01 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.4072 1.9745 1.7918 1.9280 0.1 τi (sec) 0.000069 0.001087 0.021611 1.5076 τJ 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGI4064DPbF L L 0 D UT 1K VC C 80 V Rg DU T 4 80V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T L 4x DC 360V 400V - 5V DU T / D RIVER Rg DUT VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM Cf orce 100K D1 22K C sense DUT Rg VCC Gf orce DUT 0.0075µ E sense Ef orce Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com IRGI4064DPbF 500 tf 400 300 V CE (V) 200 90% ICE 25 20 15 500 tr 400 300 VCE (V) I CE (A) TEST CURRENT 25 20 15 10 5 5% V CE 90% test current 10% test current 10 5% V CE 200 100 0 -100 -0.1 100 0 5 5% ICE 0 Eoff Loss 0 Eon Loss 0.1 time (µs) -5 -100 -0.2 -5 0.6 0.8 0 0.2 0.4 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 100 0 -100 -200 -300 -400 -500 -600 -0.05 Peak IRR 20 QRR t RR 10% Peak IRR 600 500 VCE 400 Vce (V) ICE 100 80 60 40 20 0 -20 -5 0 5 10 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 15 10 5 0 -5 -10 -15 0.15 300 200 100 0 0.00 0.05 time (µS) 0.10 Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 www.irf.com Ice (A) VF (V) I F (A) I CE (A) 9 IRGI4064DPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAD'#Bà XDUCÃ6TT@H7G`à GPUÃ8P9@Ã"#"! 6TT@H7G@9ÃPIÃXXÃ!#Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅFÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S DSAD'#B !#F Ã"#ÃÃÃÃÃÃÃÃÃ"! I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ!# GDI@ÃF TO-220 Full-Pak package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/09 10 www.irf.com