IRGI4065PBF

PD - 97187 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package IRGI4065PbF Key Parameters 300 1.25 170 150 V V A °C VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25°C TJ max C G E E C G n-channel G Gate C Collector TO-220AB Full-Pak E Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter VGE IC @ TC = 25°C IC @ TC = 100°C IRP @ TC = 25°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N Max. ±30 28 14 170 39 16 0.31 -40 to + 150 Units V A W W/°C °C Thermal Resistance Parameter RθJC Junction-to-Case d Typ. ––– Max. 3.20 Units °C/W www.irf.com 1 02/17/06 IRGI4065PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVCES V(BR)ECS ∆ΒVCES/∆TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltagee Breakdown Voltage Temp. Coefficient Min. 300 18 ––– ––– ––– Typ. Max. Units ––– ––– 0.23 1.05 1.25 1.75 2.25 2.75 ––– -12 2.0 50 ––– ––– 26 62 20 ––– 875 975 2200 110 55 5.0 13 ––– ––– ––– ––– 1.45 ––– ––– ––– 5.0 ––– 25 ––– 100 -100 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC nA V V mV/°C µA V Conditions VGE = 0V, ICE = 1 mA VGE = 0V, ICE = 1 A V V/°C Reference to 25°C, ICE = 1mA VGE = 15V, ICE = 15A e V VGE = 15V, ICE = 28A e V V VGE = 15V, ICE = 70A e VGE = 15V, ICE = 110A e VGE = 15V, ICE = 110A, TJ = 150°C e VCE = VGE, ICE = 0.5mA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150°C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve VCC = 240V, VGE = 15V, RG= 5.1Ω L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 25°C L = 220nH, C= 0.40µF, VGE = 15V VCC = 240V, RG= 5.1Ω, TJ = 100°C VGE = 0V VCE = 30V ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13 VCE(on) Static Collector-to-Emitter Voltage ––– ––– ––– VGE(th) ∆VGE(th)/∆TJ ICES IGES gfe Qg Qgc tst EPULSE Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Shoot Through Blocking Time Energy per Pulse 2.6 ––– ––– ––– ––– ––– ––– ––– ––– 100 ––– ––– Ciss Coss Crss LC LE Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance ––– ––– ––– ––– ––– Notes:  Half sine wave with duty cycle = 0.10, ton=2µsec. ‚ Rθ is measured at TJ of approximately 90°C. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. 2 www.irf.com IRGI4065PbF 280 TOP 280 V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE TOP 240 200 ICE (A) BOTTOM 240 200 ICE (A) BOTTOM V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 1. Typical Output Characteristics @ 25°C 280 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE Fig 2. Typical Output Characteristics @ 75°C 360 TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE 240 200 ICE (A) BOTTOM 320 280 240 ICE (A) BOTTOM 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) 200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V) Fig 3. Typical Output Characteristics @ 125°C 600 ICE, Collector-to-Emitter Current (A) Fig 4. Typical Output Characteristics @ 150°C 20 IC = 25A 500 15 400 300 200 T J = 25°C T J = 125°C VCE (V) 10 T J = 25°C T J = 150°C 5 100 0 0 5 10 15 20 VGE, Gate-to-Emitter Voltage (V) 0 0 5 10 VGE (V) 15 20 Fig 5. Typical Transfer Characteristics Fig 6. VCE(ON) vs. Gate Voltage www.irf.com 3 IRGI4065PbF 30 25 20 15 10 5 0 0 25 50 75 100 125 150 180 160 Repetitive Peak Current (A) IC, Collector Current (A) 140 120 100 80 60 40 20 0 25 50 75 ton= 2µs Duty cycle