IRGIB10B60KD1P

PD - 94913 IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free C VCES = 600V IC = 10A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.7V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current TO-220 Full-Pak Max. 600 16 10 A 32 32 16 10 32 2500 ±20 44 22 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Units V c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2.0 Max. 3.4 5.3 ––– 62 ––– Units °C/W g www.irf.com 1 12/29/03 IElectrical Characteristics @ T = 25°C (unless otherwise specified) RGIB10B60KD1P J Parameter Min. Typ. Max. Units — 0.99 1.70 2.05 2.06 4.5 -10 5.0 1.0 90 150 1.80 1.32 1.23 — Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 1.50 VCE(on) Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe Forward Transconductance — — ICES Zero Gate Voltage Collector Current — — VFM Diode Forward Voltage Drop — — — IGES Gate-to-Emitter Leakage Current — — V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 10A, VGE = 15V, TJ = 25°C 2.10 2.35 V IC = 10A, VGE = 15V, TJ = 150°C IC = 10A, VGE = 15V, TJ = 175°C 2.35 5.5 V VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) — S VCE = 50V, IC = 10A, PW = 80µs VGE = 0V, VCE = 600V 150 250 µA VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C 400 2.40 V IF = 5.0A, VGE = 0V IF = 5.0A, VGE = 0V, TJ = 150°C 1.74 IF = 5.0A, VGE = 0V, TJ = 175°C 1.62 ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge Min. Typ. Max. Units — 41 62 — 4.6 6.9 — 19 29 — 156 264 — 165 273 — 321 434 — 25 33 — 24 34 — 180 250 — 62 87 — 261 372 — 313 425 — 574 694 — 22 31 — 24 34 — 240 340 — 48 67 — 7.5 — — 610 915 — 66 99 — 23 35 FULL SQUARE 10 — — — — — — 100 99 79 14 553 — — 128 103 18 719 nC Conditions IC = 10A VCC = 400V VGE = 15V IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 25°C IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.1mH Ls= 150nH, TJ = 25°C µJ d ns µJ ns IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C d nH pF µs A µJ ns A nC Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50Ω TJ = 150°C, Vp = 600V, RG = 50Ω VCC=360V,VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 10A, L = 1.07mH VGE = 15V, RG = 50Ω di/dt = 500A/µs  Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 50Ω. ‚ Energy losses include "tail" and diode reverse recovery. 2 www.irf.com IRGIB10B60KD1P 20 50 45 16 40 35 Ptot (W) 12 IC (A) 30 25 20 15 8 4 10 5 0 0 20 40 60 80 100 120 140 160 180 T C (°C) 0 0 20 40 60 80 100 120 140 160 180 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 µs 100 µs IC (A) 1 1ms 0.1 DC IC A) 1 10 100 VCE (V) 1000 10000 10 0.01 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 175°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGIB10B60KD1P 20 18 16 14 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 20 18 16 14 12 10 8 6 4 2 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 12 10 8 6 4 2 0 0 2 VCE (V) 4 6 0 2 VCE (V) 4 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 20 18 16 14 ICE (A) 40 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 35 30 25 IF (A) -40°C 25°C 150°C 12 10 8 6 4 2 0 0 20 15 10 5 0 2 VCE (V) 4 6 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 4 www.irf.com IRGIB10B60KD1P 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 5.0A ICE = 10A ICE = 20A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 5.0A ICE = 10A ICE = 20A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 VCE (V) 100 90 80 70 ICE = 10A ICE = 20A TJ = 25°C TJ = 150°C 12 10 8 6 4 2 0 5 10 VGE (V) ICE (A) ICE = 5.0A 60 50 40 30 20 10 T J = 150°C T J = 25°C 0 5 10 VGE (V) 15 20 15 20 0 Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 IRGIB10B60KD1P 700 600 500 Energy (µJ) 1000 tdOFF EOFF Swiching Time (ns) 100 400 300 200 100 0 0 5 10 IC (A) 15 EON tF tdON 10 tR 20 1 0 5 10 15 20 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 50Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 50Ω; VGE= 15V 1000 10000 800 EOFF Swiching Time (ns) EON 1000 Energy (µJ) 600 tdOFF 400 100 200 tF tR tdON 10 0 100 200 300 400 500 0 100 200 300 400 500 0 RG ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V 6 www.irf.com IRGIB10B60KD1P 15 16 RG = 50 Ω RG = 150 Ω RG = 270 Ω 5 14 12 10 10 IRR (A) IRR (A) 20 8 6 RG = 470 Ω 4 2 0 0 5 10 15 0 0 100 200 300 400 500 IF (A) RG ( Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 10A 16 14 1000 150Ω 800 270 Ω 470Ω 50Ω 20A 10A 12 8 6 4 2 0 0 200 400 600 Q RR (nC) 10 600 IRR (A) 400 5.0A 200 0 0 100 200 300 400 500 600 diF /dt (A/µs) diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150°C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 7 IRGIB10B60KD1P 200 160 Energy (µJ) 120 470 Ω 80 270 Ω 150 Ω 50 Ω 40 0 5 10 15 20 25 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C 1000 16 Cies 14 12 300V 400V Capacitance (pF) 10 VGE (V) 100 8 6 4 Coes Cres 10 1 10 100 2 0 0 10 20 30 40 50 Q G , Total Gate Charge (nC) VCE (V) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 10A; L = 2500µH 8 www.irf.com IRGIB10B60KD1P 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.3628 0.2582 1.1008 1.6973 τi (sec) 0.00018 0.000695 0.075305 1.781 0.1 0.02 0.01 τJ 0.01 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.9004 1.3642 1.4540 1.5805 τi (sec) 0.000103 0.000693 0.033978 1.6699 0.1 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 100 0.01 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGIB10B60KD1P L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGIB10B60KD1P 600 tf 500 400 90% Ice 300 Vce (V) 5% Vce 200 5% Ice 100 0 -100 -200 0.4 0.6 0.8 Time (uS) 1 1.2 Eoff Loss Ice 2.5 0 -2.5 -5 100 5% Vce 5 15 12.5 10 7.5 Ice (A) Ice (A) Vce (V) 600 30 Vce 500 tr Vce Ice 25 400 90% Ice 10% Ice 20 5 200 10 0 Eon Loss -100 0.05 0 -5 0.15 0.25 Time (uS) 0.35 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 100 QRR 0 tRR -100 5 10 300 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 15 400 200 150 Vce (V) Vf (V) 200 100 -300 Peak IRR 10% Peak IRR -5 -400 -10 100 50 -500 -15 0 0.00 0 50.00 -600 0.20 0.30 0.40 Time (uS) 0.50 -20 0.60 10.00 20.00 30.00 40.00 Time (uS) Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com 11 Ice (A) -200 0 If (A) Ice (A) 300 15 IRGIB10B60KD1P TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L OT CODE P AR T N U M B E R IR F I8 4 0 G 924K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D AT E C O D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K TO-220 Full-Pak package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/