IRGMVC50U

PD -90825A IRGMVC50U INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz Switching-loss rating includes all "tail" losses Ceramic Eyelets C Ultra Fast Speed IGBT VCES = 600V G E VCE(on) max = 3.0V @VGE = 15V, IC = 27A Description n-ch an nel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight TO-258AA Max. 600 45* 27 220 180 ±20 200 80 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 10.5 (typical) Units V A V W °C g *Current is limited by pin diameter Thermal Resistance Parameter RthJC RthJC RthCS RthJA Junction-to-Case-IGBT Junction-to-Case-Diode Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — — — 0.21 — 0.625 1.0 — 30 Test Conditions °C/W For footnotes refer to the last page www.irf.com 1 02/20/02 IRGMVC50U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 ––– ––– V VGE = 0V, IC = 1.0 mA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.6 ––– V/°C VGE = 0V, IC = 1.0 mA ––– ––– 3.0 IC = 27A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– ––– 3.25 IC = 45A See Fig. 5 V ––– ––– 2.85 IC = 27A , TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 ––– 5.5 VCE = VGE, IC = 250 µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250 µA gfe Forward Transconductance ➂ 16 ––– ––– S VCE = 100V, IC = 27A ––– ––– 250 VGE = 0V, VCE = 480V µA ICES Zero Gate Voltage Collector Current ––– ––– 5000 VGE = 0V, VCE = 480V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20 VFM Diode Forward Voltage Drop ––– ––– 1.7 IC = 27A V ––– ––– 1.5 IC = 27A , TJ = 125°C Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– 0.12 1.6 1.7 24 27 180 130 2.7 6.8 Max. Units Conditions 140 IC = 27A 35 nC VCC = 300V See Fig. 8 70 VGE = 15V 50 IC = 27A, VCC = 480V 75 VGE = 15V, RG = 2.35Ω ns 300 Energy losses include "tail" 210 See Fig. 10, 11, 13 ––– mJ ––– 2.8 ––– TJ = 125°C ––– IC = 27A, VCC = 480V ns ––– VGE = 15V, RG = 2.35Ω ––– Energy losses include "tail" mJ See Fig. 11, 13 ––– ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– VGE = 0V ––– pF VCC = 30V See Fig. 7 ––– ƒ = 1.0MHz ns 100 di/dt = 200A/µS, IF = 27A VR ≤ 200V 375 nC di/dt = 200A/µS, IF = 27A TJ = 125°C, VR ≤ 200V Cies Coes Cres T rr Q rr Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Peak Reverse Recovery Time Diode Peak Reverse Recovery Charge ––– 2900 ––– 330 ––– 41 ––– ––– ––– ––– Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGMVC50U Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRGMVC50U Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGMVC50U Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRGMVC50U 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 www.irf.com IRGMVC50U L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 12a - Clamped Inductive Load Test Circuit Fig. 12b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 13a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 13b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRGMVC50U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. S Pulse width ≤ 5µs; duty factor ≤ 0.1%. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω Case Outline and Dimensions — TO-258AA A 4.19 [.165] 3.93 [.155] 17.65 [.695] 17.39 [.685] 6.85 [.270] 6.09 [.240] 0.12 [.005] 1.14 [.045] 0.88 [.035] 26.59 [1.047] 25.33 [ .997] 17.95 [.707] 17.70 [.697] 21.20 [.835] 20.70 [.815] 13.97 [.550] 13.46 [.530] B R 3.68 [.145] 3.18 [.125] 8.63 [.340] 7.62 [.300] C 3X 1.65 [.065] 1.39 [.055] CA C B 3.68 [.145] 3.43 [.135] 14.22 [.560] 11.43 [.450] 5.08 [.200] 2X 0.50 [.020] 0.25 [.010] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHE S ]. CONT ROLLING DIME NS ION: INCH. CONF ORMS T O JE DEC OUT LINE T O-258AA BE FORE LE ADFORMING. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com