IRGP20B120U-E

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast Non Punch Through (NPT) Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 3.05V VGE = 15V, IC = 20A, 25°C Benefits • Benchmark efficiency above 20KHz • Optimized for Welding, UPS, and Induction Heating applications • Rugged with UltraFast performance • Low EMI • Significantly Less Snubber required • Excellent Current sharing in Parallel operation • Longer leads for easier mounting n-channel TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EAS @ TC =25°C Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Gate-to-Emitter Voltage Avalanche Energy, single pulse IC = 25A, VCC = 50V, RGE = 25ohm L = 200µH (Fig. CT.6) Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 1200 40 20 120 120 ± 20 65 Units V A V mJ PD @ TC = 25°C PD @ TC = 100°C TJ TSTG 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt ZθJC Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case Min. ––– ––– ––– ––– (Fig.18) Typ. ––– 0.24 ––– 6 (0.21) Max. 0.42 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 03/06/01 IRGP20B120U-E Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES / ∆Tj Temperature Coeff. of Breakdown Voltage Min. 1200 Typ. +1.2 3.05 3.37 4.23 3.89 4.31 5.0 - 1.2 15.7 Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) ∆VGE(th) / ∆Tj Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance 4.0 13.6 Max. Units V V/°C 3.45 3.80 4.85 V 4.50 5.06 6.0 V o Conditions VGE = 0V,Ic =250 µA VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 20A, VGE = 15V IC = 25A, VGE = 15V IC = 40A, VGE = 15V IC = 20A, VGE = 15V, TJ = 125°C IC = 25A, VGE = 15V, TJ = 125°C VCE = VGE, IC = 250 µA o Fig. 5, 6 7, 8 9 10 8,9,10,11 mV/ C VCE = VGE, IC = 1 mA (25 -125 C) gfe ICES IGES Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current 17.8 250 420 750 1482 2200 ±100 S VCE = 50V, IC = 20A, PW=80µs VGE = 0V, VCE = 1200V µA VGE = 0V, VCE = 1200V, TJ =125°C VGE = 0V, VCE = 1200V, TJ =150°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss * Turn-Off Switching Loss * Total Switching Loss * Turn-on Switching Loss * Turn-off Switching Loss * Total Switching Loss * Turn - on delay time Rise time Turn - off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 169 24 82 850 425 Max. Units Conditions IC = 20A 254 36 nC VCC = 600V VGE = 15V 126 IC = 20A, VCC = 600V 1050 650 µJ VGE = 15V, Rg = 5Ω, L = 200µH TJ = 25 C, Energy losses include tail and diode reverse recovery o Fig. 17 CT 1 CT 4 WF 1 WF 2 12, 14 CT 4 WF 1 & 2 13, 15 CT 4 WF 1 WF 2 1275 1800 1350 1550 610 875 1960 2425 50 20 204 24 2200 210 85 65 30 230 35 ns µJ Ic = 20A, VCC = 600V VGE = 15V, Rg = 5Ω, L = 200µH TJ = 125 C, Energy losses include tail and diode reverse recovery o Ic = 20A, VCC = 600V VGE = 15V, Rg = 5Ω, L = 200µH TJ = 125oC VGE = 0V pF VCC = 30V f = 1.0 MHz TJ = 150oC, Ic = 120A VCC = 1000V, VP = 1200V Rg = 5Ω, VGE = +15V to 0V TJ = 150oC VCC = 900V, VP = 1200V Rg = 5Ω, VGE = +15V to 0V 16 4 CT 2 Reverse bias safe operating area FULL SQUARE CT 3 WF 3 SCSOA Le Short Circuit Safe Operating Area 10 ---13 ---- µs Internal Emitter Inductance nH Measured 5 mm from the package. * Used Diode HF40D120ACE 2 www.irf.com IRGP20B120U-E F i g .1 - M a x im u m D C C o lle c to r C u rre n t v s . C a s e T e m p e ra tu re 50 45 40 F i g .2 - P o w e r D is s ip a tio n v s . C a s e T e m p e ra tu re 320 280 240 35 (W) P 120 80 40 0 0 40 80 120 160 0 40 T C to t (A ) 30 25 20 15 10 5 0 200 160 I C 80 (°C ) 120 160 T C (° C ) F i g .3 - F o rw a rd S O A T C =2 5 °C ; T j < 1 5 0 °C 1000 PULSED 2µ s F i g .4 - R e v e rs e B i a s S O A T j = 1 5 0 °C , V GE = 1 5 V 1000 100 10 µ s 100 100 µ s (A ) 10 1m s C I I 10 1 1 1 10m s DC 0 .1 1 10 V CE 100 (V ) 1000 10000 C (A ) 10 V CE 100 (V ) 1000 10000 www.irf.com 3 IRGP20B120U-E F i g .5 - T y p i c a l IG B T O u tp u t C h a ra c te ri s ti c s T j= -4 0 ° C ; tp = 3 0 0 µs 60 55 50 45 40 (A ) 35 30 25 20 15 10 5 0 0 1 2 V 3 CE F i g .6 - T y p ic a l IG B T O u tp u t C h a ra c te ris tic s T j= 2 5 ° C ; tp = 3 0 0 µs 60 55 50 45 40 V V V V V GE GE GE GE GE V V V V V GE GE GE GE GE = 1 8V = 1 5V = 1 2V = 1 0V = 8V = 1 8V = 1 5V = 1 2V = 1 0V = 8V (A ) C 35 30 25 20 15 10 5 0 I C 4 (V ) 5 6 I 0 1 2 V 3 CE 4 (V ) 5 6 F i g .7 - T y p ic a l IG B T O u tp u t C h a ra c te ris tic s T j= 1 2 5 ° C ; tp = 3 0 0 µs 60 55 50 45 40 V V V V V GE GE GE GE GE = 1 8V = 1 5V = 1 2V = 1 0V = 8V (A) C 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 I V CE (V ) 4 www.irf.com IRGP20B120U-E F i g .9 - T y p ic a l V C E v s V 8 T j= -4 0 ° C 20 18 16 14 (V ) (V) GE F i g .1 0 - T y p ic a l V C E v s V 9 T j= 2 5 ° C 20 18 16 14 12 10 8 6 4 2 0 GE 12 10 8 6 4 2 0 6 8 10 12 14 V G E (V ) 16 18 20 I CE =1 0 A I CE =2 0 A I CE =4 0 A I CE =1 0 A I CE =2 0 A I CE =4 0 A CE V V CE 6 8 10 12 14 V GE (V ) 16 18 20 F i g .1 1 - T y p ic a l V C E v s V 10 T j= 1 2 5 ° C 20 18 16 14 (V ) GE Fi g.12 - T y p. Trans fer C harac teris tic s 11 V C E = 20V ; tp= 20µ s 250 225 200 175 (A ) 150 125 100 75 50 25 0 6 8 10 12 14 V G E (V ) 16 18 20 0 4 8 V GE T j= 2 5 ° C T j= 1 2 5 ° C 12 10 8 6 4 2 0 I CE =1 0 A I CE =2 0 A I CE =4 0 A CE V I C T j= 1 2 5 ° C T j= 2 5 ° C 12 (V ) 16 20 www.irf.com 5 IRGP20B120U-E F i g .1 3 - T y p ic a l E n e r g y L o s s v s Ic 12 T j= 1 2 5 ° C ; L = 2 0 0 µH ; V C E = 6 0 0 V ; R g=22 Ω ; V GE =15V 6000 E on tdoff F i g .1 4 - T y p ic a l S w itc h in g T im e v s Ic 13 T j= 1 2 5 ° C ; L = 2 0 0 µH ; V C E = 6 0 0 V ; R g=22 Ω ; V GE =15V 1000 5000 E nergy (µJ 4000 3000 E off t (nS ) 100 tr tdon tf 2000 1000 0 0 10 20 30 40 50 10 0 10 20 30 40 50 I C (A ) I C (A ) F i g .1 6 - T y p i c a l S w i tc h i n g T i m e v s R g 15 T j= 1 2 5 ° C ; L = 2 0 0 µ H ; V C E = 6 0 0 V ; I C E = 2 0 A ; V GE = 1 5 V F i g .1 5 - T y p ic a l E n e r g y L o s s v s R g 14 T j= 1 2 5 ° C ; L = 2 0 0 µH ; V C E = 6 0 0 V ; I CE =2 0 A ; V GE =1 5 V 3000 2800 2600 2400 2200 Energy (uJ 2000 1600 1400 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 35 40 45 50 55 1000 E on tdoff t (nS) 1800 E off 100 tdon tr tf 10 0 5 10 15 20 25 30 35 40 45 50 55 R g (o h m s ) R g (o h m s ) 6 www.irf.com IRGP20B120U-E F i g .2 2 - T y p i c a l C a p a c i ta n c e v s V 16 V G E = 0 V ; f= 1 M H z 10000 CE F i g .2 3 - T y p . G a te C h a r g e v s . V 17 I C = 2 0 A ; L = 6 0 0 µH 16 14 GE 600V 800V C C a p a cIta n ce (p ie s 12 1000 (V) V 10 8 6 C 100 oes GE 4 C re s 2 0 10 0 20 40 60 CE 80 100 0 40 80 120 160 200 V (V ) Q G , T o ta l G a te C h a r g e (n C ) F i g .2 4 - N o rm a liz e d T ra n s ie n t T h e rm a l Im p e d a n c e , J u n c tio n -to -C a s e 18 10 θ 1 D = 0.5 0 .2 0 .1 0 .1 0 .0 5 P 0 .0 2 0 .0 1 DM t1 0 .0 1 t2 N o te s : 1 . D u t y f a c to r D = t 1 / t 2 2 . P e a k T J = P D M x Z thJC + T S IN G L E P U LS E C 0 .0 0 1 0 .0 0 0 0 1 0 .0 0 0 1 0 0 .0 0 1 0 0 0 .0 1 0 0 0 0 .1 0 0 0 0 1 .0 0 0 0 0 1 0 .0 0 0 0 0 t 1 , R e c ta n g u la r P u ls e D u ra tio n (s e c ) www.irf.com 7 IRGP20B120U-E Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC 0 DUT 1K 80 V + - DUT 1000V Rg Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit Driver DC DIODE CLAMP L 900V DUT / DRIVER Rg DUT VCC Fig. CT.5 - Resistive Load Circuit R = VCC ICM Fig. CT.6 - Unclamped Inductive Load Circuit L DUT Rg VCC DUT Rg VCC 8 www.irf.com IRGP20B120U-E Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 1000 25 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 800 80 9 0 % IC E 800 20 600 9 0 % te s t c u r r e n t 60 600 t f 15 400 (V tr 40 T E S T C UR R E NT (V 400 10 E E E VC VC IC 5% VCE 200 1 0 % te s t c u r r e n t 20 5 % VCE 200 5 % IC E 5 0 0 E of f L o s s 0 Eon Loss 0 -2 0 0 -0 .2 0 .0 0 .2 0 .4 0 .6 0 .8 t i m e (µ s ) -5 -2 0 0 -0 .2 -0 .1 0 .0 0 .1 0 .2 0 .3 t i m e (µ s ) -2 0 Fig. WF.3- Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 1200 250 1000 200 800 150 (V 600 100 E VC 400 50 200 0 0 -1 0 0 10 t i m e (µ s ) 20 30 -5 0 www.irf.com IC E (A IC E (A (A 9 IRGP20B120U-E TO-247AD Case Outline and Dimensions DRG. No: Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/01 10 www.irf.com