IRGP30B120KD-EP

PD- 95238 IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package • Lead-Free C Motor Control Co-Pack IGBT VCES = 1200V G E VCE(on) typ. = 2.28V VGE = 15V, IC = 25A, 25°C N-channel n-channel Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. 1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case (Fig.24) Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6 (0.21) Max. 0.42 0.83 ––– 40 ––– Units °C/W g (oz) www.irf.com 1 7/27/04 IRGP30B120KD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES / ∆Tj Temperature Coeff. of Breakdown Voltage Min. 1200 Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.86 1.87 2.01 Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) ∆VGE(th) / ∆Tj Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance 4.0 14.8 Max. Units V V/°C 2.48 2.66 4.00 V 3.10 3.35 6.0 V 19.0 250 675 2000 2.06 2.17 2.18 2.40 ±100 S µA Conditions VGE = 0V,Ic =250 µA VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 25A, VGE = 15V IC = 30A, VGE = 15V IC = 60A, VGE = 15V IC = 25A, VGE = 15V, TJ = 125°C IC = 30A, VGE = 15V, TJ = 125°C VCE = VGE, IC = 250 µA o Fig. 5, 6 7, 9 10 11 9 ,1 0 ,1 1 ,1 2 o mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C ) gfe ICES VCE = 50V, IC = 25A, PW=80µs VGE = 0V,VCE = 1200V VGE = 0v, VCE = 1200V, TJ =125°C VGE = 0v, VCE = 1200V, TJ =150°C IC = 25A Zero Gate Voltage Collector Current VFM Diode Forward Voltage Drop V IC = 30A IC = 25A, TJ = 125°C IC = 30A, TJ = 125°C 8 IGES Gate-to-Emitter Leakage Current nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-on Switching Loss Turn-off Switching Loss Total Switching Loss Turn - on delay time Rise time Turn - off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. 169 19 82 1066 1493 2559 1660 2118 3778 50 25 210 60 2200 210 85 Max. Units Conditions IC = 25A 254 29 nC VCC =600V VGE = 15V 123 IC = 25A, VCC = 600V 1250 1800 µJ VGE = 15V, Rg = 5Ω, L =200µH 3050 1856 2580 4436 65 35 230 75 ns µJ TJ = 25 C, Energy losses include tail and diode reverse recovery o Fig. 23 CT 1 CT 4 WF1 WF2 13, 15 CT 4 WF1 & 2 14, 16 CT 4 WF1 WF2 Ic =25A, VCC=600V VGE = 15V, Rg = 5Ω, L =200µH TJ = 125 C, Energy losses include tail and diode reverse recovery o Ic =25A, VCC=600V VGE = 15V, Rg = 5Ω, L =200µH TJ = 125oC, VGE = 0V pF VCC = 30V f = 1.0 MHz TJ =150oC, Ic = 120A 22 4 CT 2 Reverse bias safe operating area FULL SQUARE VCC = 1000V, VP = 1200V Rg = 5Ω, VGE = +15V to 0 V TJ = 150 C VCC = 900V,VP = 1200V Rg = 5Ω, VGE = +15V to 0 V TJ = 125oC VCC = 600V, Ic = 25A VGE = 15V, Rg = 5Ω, L =200µH Measured 5 mm from the package. o CT 3 WF4 SCSOA Erec trr Irr Le Short Circuit Safe Operating Area 10 ---1820 300 34 13 ---2400 38 µs µJ ns A nH Reverse recovery energy of the diode Diode Reverse recovery time Peak Reverse Recovery Current Internal Emitter Inductance 1 7 ,1 8 ,1 9 20, 21 CT 4 , WF3 2 www.irf.com IRGP30B120KD-EP Fig.1 - Maximum DC Collector Current vs. Case Temperature 70 Fig.2 - Power Dissipation vs. Case Temperature 320 280 240 200 60 50 (W) P tot (A) 40 160 120 C 30 I 20 80 10 40 0 0 0 40 80 120 160 0 40 80 T C (°C) 120 160 T C (°C) Fig.3 - Forward SOA T C =25°C; Tj < 150°C 1000 PULSED 2µs Fig.4 - Reverse Bias SOA Tj = 150°C, V GE = 15V 1000 100 10µ s 100 100µ s (A) 10 1ms I 1 10ms DC 0.1 1 10 100 V CE (V) 1000 10000 I 10 1 1 10 100 V CE (V) 1000 10000 www.irf.com C C (A) 3 IRGP30B120KD-EP Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µs 60 55 50 45 40 (A) 60 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300µs 55 50 45 40 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V (A) C 35 30 25 20 15 10 5 0 0 1 2 3 4 V CE (V) 5 6 35 30 25 20 15 10 5 0 0 1 2 3 4 V CE (V) 5 6 C I Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µs 60 55 50 45 40 V GE = 18V V GE = 15V V GE = 12V V GE = 10V V GE = 8V I 60 55 50 45 40 (A) 35 30 25 20 15 10 5 0 Fig.8 - Typical Diode Forward Characteristic tp=300µs - 40°C 25°C 125°C (A) C 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 I I F 0 1 V CE (V) 2 V F (V) 3 4 4 www.irf.com IRGP30B120KD-EP Fig.9 - Typical V CE vs V GE Tj= -40°C 20 18 16 14 Fig.10 - Typical V CE vs V GE Tj= 25°C 20 18 16 14 V CE ( V ) 12 10 8 6 4 2 0 (V) 12 10 8 6 4 2 0 6 8 10 12 14 16 18 20 I CE =10A I CE =25A I CE =50A I CE =10A I CE =25A I CE =50A V CE V GE (V) 6 8 10 12 14 V GE (V) 16 18 20 Fig.11 - Typical V CE v s V GE Tj= 125°C 20 18 16 14 V CE ( V ) 12 10 8 6 4 2 0 6 8 10 12 14 V GE (V) 16 18 20 I CE =10A I CE =25A I CE =50A Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20µs 250 225 200 175 150 (A) 125 100 75 50 25 0 0 4 8 12 V GE (V) 16 20 Tj=125°C Tj=25°C Tj=25°C Tj=125°C www.irf.com I C 5 IRGP30B120KD-EP Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ; V GE =15V 8000 7000 6000 Eon tdoff Fig.14 - Typical Switching Time vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ;V GE =15V 1000 Eoff tf 100 Energy (µJ) 5000 t (nS) 4000 3000 2000 1000 0 0 10 20 30 40 50 60 tr tdon 10 0 10 20 30 40 50 60 I C (A) Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =25A; V GE =15V 3500 3300 3100 2900 Energy (uJ) 2700 2500 2300 2100 1900 1700 1500 0 5 10 15 20 25 30 35 40 45 50 55 I C (A) Fig.16 - Typical Switching Time vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =25A; V GE =15V 1000 Eon tdoff t (nS) Eoff 100 tdon tr tf 10 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Rg (ohms) 6 www.irf.com IRGP30B120KD-EP Fig.17 - Typical Diode I RR vs I F Tj=125°C 45 Fig.18 - Typical Diode I RR vs Rg Tj=125°C; I F =25A 45 40 35 40 35 Rg=5 Ω 30 30 IRR ( A ) 25 Rg=10 Ω Rg=22 Ω 20 15 10 Rg=51 Ω I RR ( A ) 25 20 15 10 5 0 5 0 0 10 20 I F (A) 30 40 50 60 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Fig.19 - Typical Diode I RR vs dI F /dt V CC =600V; V GE =15V I F =25A; Tj=125°C Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V; Tj=125°C 7000 6500 45 40 35 30 (A) 25 22 Ω 51 Ω 10 Ω 5Ω 50A 40A 30A 25A 20A Rg=5 Ω 6000 5500 QRR ( n C ) 5000 4500 4000 3500 3000 2500 I RR Rg=10 Ω 20 15 10 5 0 0 500 1000 dI F / dt (A/µs) 1500 Rg=51 Ω Rg=22 Ω 0 500 1000 1500 dI F / dt (A/µs) www.irf.com 7 IRGP30B120KD-EP Fig.21 - Typ. Diode E rec v s. I F Tj=125°C 2400 5Ω 2200 10 Ω 22 Ω 51 Ω 2000 Energy (uJ) 1800 1600 1400 1200 1000 800 0 10 20 I F (A) 30 40 50 60 Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 10000 Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600µH 16 14 600V 800V C ies 12 CapacItance (pF) 1000 10 V GE ( V ) 8 6 C oes 100 4 C res 2 10 0 20 40 60 80 100 0 0 40 80 120 160 200 V CE (V) Q G , Total Gate Charge (nC) 8 www.irf.com IRGP30B120KD-EP Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case 10 θ 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 0.01 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) www.irf.com 9 IRGP30B120KD-EP Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L DUT 0 VCC 80 V Rg DUT 1000V 1K Fig. CT.3 - S.C. SOA Circuit Fig. CT.4 - Switching Loss Circuit Driver D C diode clamp / DUT L 900V - 5V DUT / DRIVER Rg DUT VCC Fig. CT.5 - Resistive Load Circuit R= VCC ICM DUT Rg VCC 10 www.irf.com IRGP30B120KD-EP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 800 40 700 35 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 900 800 700 TEST CURRENT 45 40 35 30 25 20 tr 15 10% test current 600 90% ICE 500 30 25 600 500 (V) V CE ( V ) I CE ( A ) CE tf 300 15 400 300 V 200 5% VCE 100 5% ICE 10 200 5% VCE 10 5 0 Eon Loss 5 100 0 0 Eoff Loss -100 -0.5 0 -100 4.0 4.1 4.2 4.3 4.4 4.5 t I me (µs) -5 0.0 0.5 1.0 t I me (µs) 1.5 2.0 2.5 -5 Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 0 30 Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 1200 250 -200 QRR tRR -400 20 1000 200 10 800 V CE ( V ) 150 V C E( V ) I C E( A ) ICE ( A ) 400 20 90% test current -600 10% Peak IRR Peak IRR 0 600 100 -800 -10 400 50 -1000 -20 200 0 -1200 -0.5 -30 0.0 0.5 t I me (µS) 1.0 0 -10 0 10 t i me (µs) 20 30 -50 www.irf.com ICE ( A ) 11 IRGP30B120KD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: THIS IS AN IRGP30B120KD-E WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIF IER LOGO 56 035H 57 AS SEMBLY LOT CODE DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 12 www.irf.com