IRGP35B60PD

PD - 94623B SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C IRGP35B60PD VCES = 600V VCE(on) typ. = 1.85V @ VGE = 15V IC = 22A Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies G E Features • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters RCE(on) typ. = 84mΩ ID (FET equivalent) = 35A E Benefits G C • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150kHz TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current Max. 600 60 34 120 120 40 15 60 ±20 308 123 -55 to +150 Units V d A Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw e V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6.0 (0.21) Max. 0.41 1.7 ––– 40 ––– Units °C/W g (oz) 1 www.irf.com 8/18/04 IRGP35B60PD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — — — Typ. — 0.78 1.7 1.85 2.25 2.37 3.00 4.0 -10 36 3.0 0.35 1.30 1.20 — Max. Units — — — 2.15 2.55 2.80 3.45 5.0 — — 375 — 1.70 1.60 ±100 nA V S µA mA V V V Ω Conditions VGE = 0V, IC = 500µA 1MHz, Open Collector IC = 22A, VGE = 15V IC = 35A, VGE = 15V IC = 22A, VGE = 15V, TJ = 125°C IC = 35A, VGE = 15V, TJ = 125°C IC = 250µA VCE = 50V, IC = 22A, PW = 80µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125°C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125°C VGE = ±20V, VCE = 0V Ref.Fig Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 1mA (25°C-125°C) 4, 5,6,8,9 RG VCE(on) Internal Gate Resistance Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 3.0 — — — — — — — 7,8,9 mV/°C VCE = VGE, IC = 1.0mA gfe ICES VFM IGES 10 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Min. — — — — — — — — — — — — — — — — — — — — Typ. 160 55 21 220 215 435 26 6.0 110 8.0 410 330 740 26 8.0 130 12 3715 265 47 135 179 Max. Units 240 83 32 270 265 535 34 8.0 122 10 465 405 870 34 11 150 16 — — — — — pF VGE = 0V VCC = 30V f = 1Mhz ns µJ ns µJ nC IC = 22A VCC = 400V VGE = 15V Conditions Ref.Fig 17 CT1 IC = 22A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 25°C CT3 f IC = 22A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 25°C CT3 fÃà f IC = 22A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 125°C IC = 22A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 125°C CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2 ÃfÃà 16 g Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current g — — VGE = 0V, VCE = 0V to 480V TJ = 150°C, IC = 120A 15 3 CT2 FULL SQUARE — — — — — — 42 74 80 220 4.0 6.5 60 120 180 600 6.0 10 A nC ns VCC = 480V, Vp =600V Rg = 22Ω, VGE = +15V to 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 15A, VR = 200V, di/dt = 200A/µs IF = 15A, VR = 200V, di/dt = 200A/µs IF = 15A, VR = 200V, di/dt = 200A/µs 19 21 19,20,21,22 CT5 Notes:  RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 1.85V and IC =22A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. ‚ VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 3.3Ω. ƒ Pulse width limited by max. junction temperature. „ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. … Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. 2 www.irf.com IRGP35B60PD 70 60 50 IC (A) 350 300 250 Ptot (W) 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (°C) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 70 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 100 ICE (A) 10 1 10 100 1000 IC A) 40 30 20 10 0 0 1 2 3 VCE (V) 4 5 VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE =15V 70 60 50 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 70 60 50 Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V ICE (A) 30 20 10 0 0 1 2 3 VCE (V) 4 5 ICE (A) 40 40 30 20 10 0 0 1 2 3 VCE (V) 4 5 Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs www.irf.com 3 IRGP35B60PD 800 700 600 500 VCE (V) ICE (A) 10 T J = 25°C T J = 125°C 9 8 7 6 5 4 TJ = 125°C T J = 25°C 0 5 10 VGE (V) 15 20 3 2 1 0 5 10 VGE (V) 15 20 ICE = 11A ICE = 22A ICE = 35A 400 300 200 100 0 Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 10 9 8 7 VCE (V) I sa t n o sF r adCr e t -I ( ) n t n e u owr ur n a A F 100 Fig. 8 - Typical VCE vs. VGE TJ = 25°C 6 5 4 3 2 1 0 5 10 VGE (V) ICE = 11A ICE = 22A ICE = 35A 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 0.8 1.2 1.6 2.0 2.4 15 20 F orward Voltage Drop - V FM (V) Fig. 9 - Typical VCE vs. VGE TJ = 125°C 800 700 600 Energy (µJ) Fig. 10 - Typ. Diode Forward Characteristics tp = 80µs 1000 Swiching Time (ns) EON td OFF 100 500 400 EOFF 300 200 100 0 0 5 10 15 20 IC (A) 25 30 35 40 tdON 10 tF tR 1 0 10 20 30 40 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) Fig. 12 - Typ. Switching Time vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 4 www.irf.com IRGP35B60PD 800 700 600 1000 tdOFF Swiching Time (ns) EON Energy (µJ) 500 400 100 tdON tF tR EOFF 300 200 100 0 0 10 20 30 40 50 10 1 0 10 20 30 40 50 RG ( Ω) RG ( Ω) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 30 25 Fig. 14 - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 22A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 10000 Cies Capacitance (pF) 20 Eoes (µJ) 1000 15 10 5 0 0 100 200 300 400 500 600 700 VCE (V) Coes 100 Cres 10 0 20 40 60 80 100 VCE (V) Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE 16 14 Normalized V CE(on) (V) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1.4 12 10 VGE (V) 400V 1.2 8 6 4 2 0 0 50 100 150 200 Q G , Total Gate Charge (nC) 1.0 0.8 -50 0 50 100 150 200 T J (°C) Fig. 17 - Typical Gate Charge vs. VGE ICE = 22A Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 22A, VGE= 15V www.irf.com 5 IRGP35B60PD 100 100 VR = 200V TJ = 125°C TJ = 25°C 80 VR = 200V TJ = 125°C TJ = 25°C I F = 30A I F = 30A 60 I IRRM - (A) t rr - (ns) 10 IF = 15A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt 800 1000 VR = 200V TJ = 125°C TJ = 25°C 600 VR = 200V TJ = 125°C TJ = 25°C IF = 30A di(rec)M/dt - (A/µs) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/µs) 1000 100 100 di f /dt - (A/µs) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 6 www.irf.com IRGP35B60PD 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 0.01 0.02 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.139 0.000257 0.077 0.194 0.001418 0.020178 τ1 τ2 0.001 Ci= τi /Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264 τ1 τ2 0.01 Ci= τi /Ri Ci= i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP35B60PD L L DUT 0 VCC 80 V Rg DUT 480V 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R= VCC ICM DUT / DRIVER Rg VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 Ω L = 70µH D.U.T. D G IRFP250 S dif/dt ADJUST Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8 www.irf.com IRGP35B60PD 450 400 350 300 250 VCE (V) 200 5% VCE 90% ICE 45 40 tf 35 30 25 VCE (V) 450 400 350 300 250 tr 90% test current 10% test current TEST CURRENT 45 40 35 30 25 20 15 10 5% VCE Eon Loss ICE (A) 20 15 5% ICE 200 150 100 50 0 -50 9.00 150 100 50 0 Eoff Loss 10 5 0 -5 0.80 5 0 -5 9.60 -50 -0.20 0.00 0.20 0.40 0.60 9.20 9.40 Time(µs) Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25°C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25°C using Fig. CT.3 3 IF 0 trr ta tb 4 Q rr 2 I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. WF3 - Reverse Recovery Waveform and Definitions www.irf.com ICE (A) 9 IRGP35B60PD TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN T HE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/