IRGP4050

PD-95882 IRGP4050 PDP Switch Features § § § § § § Key parameters optimized for PDP sustain & Energy recovery applications 104A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of VCE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching C VCES = 250V G E VCE(on) typ. = 1.64V @VGE = 15V, IC = 30A n-channel Description This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of VCE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current Max. 250 104* 56 208 290 ±20 1240 330 130 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A Ù Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy d Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Solder Temperature Range, for 10 sec. e V mJ W °C Thermal / Mechanical Characteristics Parameter RθJC RθCS RθJA Wt Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– Typ. ––– 0.24 ––– 6 (0.21) Max. 0.38 ––– 40 ––– Units °C/W g (oz.) *Package limited to 60A. 1 www.irf.com 07/05/04 IRGP4050 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage Min. Typ. Max. Units Conditions fà VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current gà IGES Gate-to-Emitter Leakage Current 250 18 — — — — 3.0 — 34 — — — — — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.0A 8.2 — mV/°C VGE = 0V, IC = 1mA IC = 30A 1.64 1.90 IC = 56A VGE = 15V 2.04 — V IC = 104A, TJ = 150°C See Fig. 2, 5 2.60 — VCE = VGE, IC = 250µA — 6.0 -11 — mV/°C VCE = VGE, IC = 0.25mA 51 — S VCE = 100V, IC = 56A VGE = 0V, VCE = 250V — 250 — 2.0 µA VGE = 0V, VCE = 10V VGE = 0V, VCE = 250V, TJ = 150°C — 5000 — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff ETS td(on) tr td(off) tf ETS LE Cies Coes Cres Notes: Min. Typ. Max. Units — — — — — — — — — — — — — — — — — — — 230 37 78 37 35 120 59 45 125 170 35 35 130 120 280 13 4650 480 92 350 56 120 — — 180 89 — — — — — — — — — — — — nC Conditions IC = 56A VCC = 200V See Fig. 8 VGE = 15V TJ = 25°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 9, 10, 14 Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance ns µJ TJ = 150°C IC = 30A, VCC = 180V VGE = 15V, RG = 5.0Ω Energy losses include "tail" See Fig. 11, 14 Measured 5mm from package VGE = 0V VCC = 30V, See Fig. 7 f = 1.0MHz ns µJ nH pF  ‚ ƒ „ … Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES ), VGE = 20V, L = 10µH, RG = 5.0Ω, (See fig. 13a). Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 2.5ms; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. 2 www.irf.com IRGP4050 140 Triangular wave: 120 100 Clamp voltage: 80% of rated Load Current ( A ) For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 73W 80 60 Square wave: 60% of rated voltage 40 20 0 0.1 Ideal diodes 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 IC, Collector-to-Emitter Current (A) 1000 IC, Collector-to-Emitter Current (A) 100 T J = 150°C 100 10 T J = 150°C 1 TJ = 25°C 10 1 T J = 25°C 0.1 V GE = 15V 20µs PULSE WIDTH 0.1 0.1 1 10 100 V CE, Collecto-to-Emitter Voltage (V) VCC = 50V 20µs PULSE WIDTH 0 2 4 6 8 10 12 14 16 0.01 VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRGP4050 120 4.0 100 VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) LIMITED BY PACKAGE VGE = 15V 80µs PULSE WIDTH 80 3.0 IC = 112A 60 IC = 56A 2.0 40 IC = 28A 20 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature (°C) T J , Junction Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.01 0.02 0.01 τJ τ1 τ2 Ri (°C/W) τi (sec) 0.0906 0.000350 0.0906 0.002209 0.2003 0.028536 0.001 Ci= τi /Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGP4050 100000 VGS = 0V, f = 1 MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + Cgc 16 14 12 10 8 6 4 2 0 VCES = 200V IC = 56A 10000 Cies 1000 Coes 100 Cres 10 0 50 100 150 200 VGE, Gate-to-Emitter Voltage (V) Capacitance (pF) 0 50 100 150 200 VCE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 2400 2200 VCE = 200V VGE = 15V 7000 6000 Total Swiching Losses (µJ) 2000 1800 1600 1400 1200 1000 800 0 Total Swiching Losses (µJ) TJ = 25°C I C = 56A RG = 5.0Ω V GE = 15V à IC = 112A 5000 4000 3000 2000 1000 0 IC = 56A IC = 28A -55 -5 45 95 145 5 10 15 20 25 30 RG, Gate Resistance (Ω) T J, Juntion Temperature (°C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRGP4050 6000 1000 5000 V CE= 200V 4000 V GE = 15V IC, Collector-to-Emitter Current (A) RG = 5.0Ω TJ = 150°C VGE = 20V T J = 125° 100 Total Swiching Losses (µJ) 3000 2000 10 SAFE OPERATING AREA 1000 0 20 40 60 80 100 120 1 1 10 100 1000 IC, Collecto-to-Emitter (A) VDS, Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRGP4050 L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X I C@25°C c 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V ™Ã d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5µs E off www.irf.com 7 IRGP4050 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ Note: "P" in assembly line position indicates "Lead-Free" DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)3( Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/04 8 www.irf.com