IRGP4063DPBF

PD - 97210 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package C IRGP4063DPbF VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel VCE(on) typ. = 1.65V Benefits • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI G Gate C E C G TO-247AC C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Max. 600 96 48 192 192 96 48 192 ±20 ±30 330 170 -55 to +175 Units V c e A Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 80 Max. 0.45 0.92 ––– ––– Units °C/W 1 www.irf.com 05/11/06 IRGP4063DPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.30 1.65 2.0 2.05 — -21 32 1.0 450 1.95 1.45 — Max. Units — — 2.14 — — 6.5 — — 150 1000 2.91 — ±100 nA V V V Conditions VGE = 0V, IC = 150µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage f Ref.Fig CT6 CT6 5,6,7 9,10,11 V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 48A, VGE = 15V, TJ = 25°C V IC = 48A, VGE = 15V, TJ = 150°C IC = 48A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 1.4mA VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 9, 10, 11, 12 gfe ICES VFM IGES mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) S VCE = 50V, IC = 48A, PW = 80µs µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 48A IF = 48A, TJ = 175°C VGE = ±20V 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 95 28 35 625 1275 1900 60 40 145 35 1625 1585 3210 55 45 165 45 3025 245 90 Max. Units 140 42 53 1141 1481 2622 78 56 176 46 — — — — — — — — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 48A VGE = 15V VCC = 400V Conditions Ref.Fig 24 CT1 IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery CT4 IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH, LS = 150nH, TJ = 25°C CT4 IC = 48A, VCC = 400V, VGE=15V RG=10Ω , L=200µH, LS=150nH, TJ = 175°C IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH, LS = 150nH TJ = 175°C fà 13, 15 CT4 WF1, WF2 14, 16 CT4 WF1 WF2 23 Energy losses include tail & diode reverse recovery f = 1.0Mhz TJ = 175°C, IC = 192A VCC = 480V, Vp =600V Rg = 10Ω , VGE = +15V to 0V 4 CT2 FULL SQUARE 5 — — — — 845 115 40 — — — — µs µJ ns A VCC = 400V, Vp =600V Rg = 10Ω , VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 48A VGE = 15V, Rg = 10Ω , L =200µH, Ls = 150nH 22, CT3 WF4 17, 18, 19 20, 21 WF3 Notes:  VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω. ‚ This is only applied to TO-247AC package. ƒ Pulse width limited by max. junction temperature. „ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGP4063DPbF 100 90 80 70 350 300 250 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 T C (°C) Ptot (W) 60 IC (A) 200 150 100 50 0 0 25 50 75 100 125 150 175 200 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 10µsec 100µsec 100 IC (A) IC (A) 10 1msec DC 10 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VCE (V) 100 1000 1 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 200 180 160 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =15V 200 180 160 140 ICE (A) ICE (A) 120 100 80 60 40 20 0 0 2 4 6 120 100 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 8 10 0 2 4 6 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs VCE (V) VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs www.irf.com 3 IRGP4063DPbF 200 180 160 140 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 200 180 160 140 120 -40°c 25°C 175°C ICE (A) 120 100 80 60 40 20 0 0 2 4 6 8 10 IF (A) 100 80 60 40 20 0 0.0 1.0 2.0 VF (V) 3.0 4.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 20 18 16 14 Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 20 18 16 14 VCE (V) 10 8 6 4 2 0 5 10 VGE (V) VCE (V) 12 ICE = 24A ICE = 48A ICE = 96A 12 10 8 6 4 2 0 ICE = 24A ICE = 48A ICE = 96A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 18 16 14 VCE (V) ICE (A) 200 180 160 140 Fig. 10 - Typical VCE vs. VGE TJ = 25°C T J = 25°C T J = 175°C 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 24A ICE = 48A ICE = 96A 120 100 80 60 40 20 0 15 20 0 5 VGE (V) 10 15 Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 4 www.irf.com IRGP4063DPbF 6000 5000 EOFF 4000 1000 Swiching Time (ns) Energy (µJ) tdOFF 100 tdON tF tR 3000 2000 1000 0 0 50 IC (A) EON 10 100 150 0 20 40 IC (A) 60 80 100 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 5000 4500 4000 EOFF EON Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 tdOFF Swiching Time (ns) Energy (µJ) 3500 3000 2500 2000 1500 1000 0 25 50 75 tR 100 tF tdON 10 100 125 0 25 50 75 100 125 Rg ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V 45 40 35 30 IRR (A) Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V 45 R G = 10Ω 40 35 IRR (A) 25 20 15 10 5 0 0 20 R G = 22Ω R G = 47Ω RG = 100Ω 30 25 20 15 10 40 IF (A) 60 80 100 0 25 50 75 100 125 RG (Ω) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C www.irf.com 5 IRGP4063DPbF 45 40 35 4000 3500 96A 3000 QRR (µC) 48A IRR (A) 30 25 20 15 10 0 200 400 600 800 1000 diF /dt (A/µs) 10Ω 2500 2000 1500 1000 100Ω 47Ω 22Ω 24A 0 500 1000 1500 diF /dt (A/µs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 48A; TJ = 175°C 900 800 700 600 R G = 22Ω R G = 10Ω Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 18 16 14 Time (µs) 400 350 300 Energy (µJ) Current (A) 500 400 300 200 100 0 0 20 40 IF (A) 60 80 100 RG = 100Ω RG = 47Ω 12 10 8 6 4 8 10 12 14 16 18 VGE (V) 250 200 150 100 50 Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 10000 Cies Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 14 12 10 8 6 4 2 0 V CES = 300V V CES = 400V Capacitance (pF) 1000 Coes 100 Cres 10 0 20 40 60 80 100 VCE (V) VGE, Gate-to-Emitter Voltage (V) 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 48A; L = 600µH 6 www.irf.com IRGP4063DPbF 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.01 τJ τ1 τ2 Ri (°C/W) τi (sec) 0.0872 0.000114 0.1599 0.001520 0.2020 0.020330 0.001 Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.01 Ri (°C/W) τi (sec) 0.2774 0.000908 0.3896 0.2540 0.003869 0.030195 τ1 τ2 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi /Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP4063DPbF L L 0 D UT 1K VC C 80 V Rg DU T 4 80V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit d io d e clamp / DU T L 4x DC 360V - 5V DU T / D RIVER Rg DUT VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM C force 400µH D1 10K C sense DUT Rg VCC G force DUT 0.0075µ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com IRGP4063DPbF 700 600 500 400 VCE (V) 300 90% ICE 140 120 100 80 600 500 tr 400 300 200 10% test TEST CURRE 90% test 120 100 80 60 40 20 0 EON -20 7.00 60 40 20 0 -20 1.10 200 100 0 -100 -0.40 5% VCE 5% ICE VCE (V) tf 100 0 -100 6.20 5% VCE EOFF Loss 0.10 0.60 6.40 6.60 Time (µs) 6.80 Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 60 50 40 30 20 IRR (A) 10 0 -10 -20 -30 -40 -0.15 Peak IRR 10% Peak IRR 600 500 QRR tRR 600 500 VCE ICE 400 300 200 100 0 -100 10.00 400 300 200 100 0 -100 -5.00 VCE (V) -0.05 0.05 0.15 0.25 0.00 5.00 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 time (µS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 www.irf.com ICE (A) 9 IRGP4063DPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S ,5)3( à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/06 10 www.irf.com