IRGP4068D-EPBF

PD - 97250 IRGP4068DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF Features • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package C VCES = 600V IC = 48A, TC = 100°C G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.65V Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C GC E TO-247AC IRGP4068DPbF E GC TO-247AD IRGP4068D-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 160°C IFSM IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current Max. 600 96 48 192 192 Units V c d d A Diode Continous Forward Current Diode Non Repetitive Peak Surge Current @ TJ = 25°C Diode Peak Repetitive Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 8.0 175 16 ±20 ±30 330 170 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) W V Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 80 Max. 0.45 2.0 ––– ––– Units °C/W 1 www.irf.com 08/16/06 IRGP4068DPbF/IRGP4068D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 0.30 1.65 2.0 2.05 — -21 32 1.0 450 0.96 0.81 — Max. Units — — 2.14 — — 6.5 — — 150 1000 1.05 0.86 ±100 nA V V S µA V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 48A, VGE = 15V, TJ = 25°C V IC = 48A, VGE = 15V, TJ = 150°C IC = 48A, VGE = 15V, TJ = 175°C VCE = VGE, IC = 1.4mA VCE = 50V, IC = 48A, PW = 80µs VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 8.0A IF = 8.0A, TJ = 150°C VGE = ±20V e Ref.Fig CT6 CT6 4,5,6 8,9,10 VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 8,9 10,11 mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe ICES VFM IGES 7 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eoff td(off) tf Eoff td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-Off Switching Loss Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min. — — — — — — — — — — — — Typ. 95 28 35 1275 145 35 1585 165 45 3025 245 90 Max. Units 140 42 53 1481 176 46 — — — — — — pF µJ µJ µJ µJ nC IC = 48A VGE = 15V VCC = 400V Conditions Ref.Fig 18 CT1 IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH,TJ = 25°C Energy losses include tail CT4 IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH,TJ = 25°C IC = 48A, VCC = 400V, VGE = 15V RG = 10Ω , L = 200µH,TJ = 175°C Energy losses include tail CT4 IC = 48A, VCC = 400V, VGE = 15V RG=10Ω , L=200µH, TJ = 175°C VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 192A VCC = 480V, Vp =600V Rg = 10Ω , VGE = +15V to 0V WF1 17 3 CT2 FULL SQUARE 5 — — µs VCC = 400V, Vp =600V Rg = 10Ω , VGE = +15V to 0V 16, CT3 WF2 Notes:  VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. 2 www.irf.com IRGP4068DPbF/IRGP4068D-EPbF 100 90 80 70 350 300 250 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 T C (°C) Ptot (W) 60 IC (A) 200 150 100 50 0 0 25 50 75 100 125 150 175 200 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 200 180 160 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 140 ICE (A) 10 1 10 100 VCE (V) 1000 120 100 80 60 40 20 0 0 2 4 6 IC (A) 8 10 Fig. 3 - Reverse Bias SOA TJ = 175°C; VGE =15V 200 180 160 140 ICE (A) Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 200 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VCE (V) 100 80 60 40 20 0 0 2 4 6 ICE (A) 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 160 140 120 100 80 60 40 20 0 8 10 0 2 4 6 8 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs www.irf.com 3 IRGP4068DPbF/IRGP4068D-EPbF 20 18 16 14 VCE (V) 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 24A ICE = 48A ICE = 96A 15 20 Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics 20 18 16 14 20 18 16 14 Fig. 8 - Typical VCE vs. VGE TJ = -40°C VCE (V) 10 8 6 4 2 0 5 10 VGE (V) VCE (V) 12 ICE = 24A ICE = 48A ICE = 96A 12 10 8 6 4 2 0 ICE = 24A ICE = 48A ICE = 96A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = 25°C 200 180 160 140 T J = 25°C T J = 175°C Fig. 10 - Typical VCE vs. VGE TJ = 175°C 6000 5000 4000 EOFF ICE (A) 120 100 80 60 40 20 0 0 5 VGE (V) 10 15 Energy (µJ) 3000 2000 1000 0 0 25 50 IC (A) 75 100 Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs Fig. 12 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 4 www.irf.com IRGP4068DPbF/IRGP4068D-EPbF 1000 5000 4500 4000 EOFF Swiching Time (ns) Energy (µJ) tdOFF 100 3500 3000 2500 2000 1500 tF 10 0 20 40 IC (A) 60 80 100 1000 0 25 50 75 100 125 Rg ( Ω) Fig. 13 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 tdOFF Swiching Time (ns) Fig. 14 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V 18 16 14 400 Tsc 350 Isc 300 Current (A) Time (µs) 12 10 8 6 250 200 150 100 50 8 10 12 14 16 18 VGE (V) 100 tF 10 0 25 50 75 100 125 RG ( Ω) 4 Fig. 15 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 48A; VGE = 15V 10000 16 Cies 14 12 10 8 6 4 2 0 0 20 40 60 80 100 Fig. 16 - VGE vs. Short Circuit VCC = 400V; TC = 25°C V CES = 300V V CES = 400V Capacitance (pF) 1000 Coes 100 Cres 10 VCE (V) VGE, Gate-to-Emitter Voltage (V) 0 25 50 75 100 Q G, Total Gate Charge (nC) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18 - Typical Gate Charge vs. VGE ICE = 48A; L = 600µH www.irf.com 5 IRGP4068DPbF/IRGP4068D-EPbF 1 Thermal Response ( Z thJC ) °C/W D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τJ τJ τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.0248 0.0652 0.1537 0.2065 τi (sec) 0.000014 0.000050 0.001041 0.013663 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.0400 0.7532 0.8317 0.3766 τi (sec) 0.000030 0.000717 0.004860 0.036590 0.01 τ1 τ2 τ3 τ4 0.001 SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 0.0001 1E-006 1E-005 t1 , Rectangular Pulse Duration (sec) Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com IRGP4068DPbF/IRGP4068D-EPbF L L 0 D UT 1K VC C 80 V Rg DU T 4 80V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit DIODE CLAMP / DUT L 4x DC 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM C force 400µH D1 10K C sense DUT Rg VCC G force DUT 0.0075µ E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit www.irf.com 7 IRGP4068DPbF/IRGP4068D-EPbF 700 600 500 400 VCE (V) 300 90% ICE 140 120 100 80 VCE (V) 600 500 400 300 200 100 0 -100 -5.00 VCE ICE 600 500 400 300 200 100 0 -100 10.00 tf 60 40 20 0 -20 1.10 200 100 0 -100 -0.40 5% VCE 5% ICE EOFF Loss 0.10 0.60 0.00 5.00 Time(µs) time (µS) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 8 www.irf.com ICE (A) IRGP4068DPbF/IRGP4068D-EPbF Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S ,5)3( DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. www.irf.com 9 IRGP4068DPbF/IRGP4068D-EPbF Dimensions are shown in millimeters (inches) TO-247AD Package Outline TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/06 10 www.irf.com