IRGP4069D-EPBF

PD - 97425 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 µS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight Parameter Distribution Lead Free Package C IRGP4069DPbF IRGP4069D-EPbF VCES = 600V IC(Nominal) = 35A G E tSC ≥ 5µs, TJ(max) = 175°C n-channel C VCE(on) typ. = 1.6V Benefits • High Efficiency in a Wide Range of Applications • Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses • Rugged Transient Performance for Increased Reliability • Excellent Current Sharing in Parallel Operation C GC E TO-247AC IRGP4069DPbF E GC TO-247AD IRGP4069D-EPbF G Gate C Collector Max. 600 76 50 35 105 140 76 50 140 ±20 ±30 268 134 -55 to +175 E Emitter Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C INOMINAL ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Nominal Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) c A d Continuous Gate-to-Emitter Voltage V W °C Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) f f Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 40 Max. 0.56 1.0 ––– ––– Units °C/W Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) 1 www.irf.com 10/2/09 IRGP4069DPbF/IRGP4069D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — 4.0 — — — — — — — Typ. — 1.3 1.6 1.9 2.0 — -18 25 1.0 770 2.2 1.4 — Max. — — 1.85 — — 6.5 — — 70 — 3.8 — ±100 Units V Conditions VGE = 0V, IC = 100µA Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage e d d = 175°C d mV/°C VGE = 0V, IC = 1mA (25°C-175°C) IC = 35A, VGE = 15V, TJ = 25°C V V IC = 35A, VGE = 15V, TJ = 150°C IC = 35A, VGE = 15V, TJ VCE = VGE, IC = 1.0mA VCE(on) VGE(th) ∆VGE(th)/∆TJ Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current gfe ICES VFM IGES mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) VCE = 50V, IC = 35A, PW = 60µs S µA V nA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C IF = 35A IF = 35A, TJ = 175°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Erec trr Irr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Min. — — — — — — — — — — — — — — — — — — — — Typ. 69 18 29 390 632 1022 46 33 105 44 1013 929 1942 43 35 127 61 2113 197 65 Max. 104 27 44 508 753 1261 56 42 117 54 — — — — — — — — — — Units IC = 35A nC VGE = 15V VCC = 400V Conditions IC = 35A, VCC = 400V, VGE = 15V µJ RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C IC = 35A, VCC = 400V, VGE=15V µJ RG=10Ω, L=200µH, LS=150nH, TJ = 175°C Energy losses include tail & diode reverse recovery IC = 35A, VCC = 400V, VGE = 15V ns RG = 10Ω, L = 200µH, LS = 150nH TJ = 175°C pF VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 140A VCC = 480V, Vp =600V Rg = 10Ω, VGE = +20V to 0V FULL SQUARE 5 — — — — 304 120 25 — — — — µs µJ ns A VCC = 400V, Vp =600V Rg = 10Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 35A VGE = 15V, Rg = 10Ω , L =210µH, Ls = 150nH Notes:  VCC = 80% (VCES), VGE = 20V, L = 19µH, RG = 10Ω. ‚ Pulse width limited by max. junction temperature. ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely. „ Rθ is measured at TJ of approximately 90°C. 2 www.irf.com IRGP4069DPbF/IRGP4069D-EPbF 80 70 60 50 40 30 20 10 0 25 50 75 100 T C (°C) 125 150 175 300 250 200 Ptot (W) IC (A) 150 100 50 0 25 50 75 100 T C (°C) 125 150 175 Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 1000 100 100µsec 10µsec 100 IC (A) 10 1msec DC IC (A) 10 1 1000 1 Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10 VCE (V) 100 10 100 VCE (V) 1000 Fig. 3 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE =15V 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE =20V 140 120 100 80 60 40 20 0 VGE = 18V VGE = 15V VGE = 12V ICE (A) 80 60 40 20 0 0 2 4 VGE = 10V VGE = 8.0V 6 8 10 0 2 4 6 8 10 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = ≤60µs VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = ≤60µs VCE (V) www.irf.com 3 IRGP4069DPbF/IRGP4069D-EPbF 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 140 120 100 IF (A) ICE (A) 80 60 40 20 0 0 80 60 40 20 0 -40°C 25°C 175°C 2 4 6 8 10 0.0 1.0 2.0 VF (V) 3.0 4.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = ≤60µs 20 18 16 14 Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 20 18 16 14 VCE (V) VCE (V) 12 10 8 6 4 2 0 5 10 VGE (V) ICE = 18A 12 10 8 6 4 2 0 ICE = 35A ICE = 70A ICE = 18A ICE = 35A ICE = 70A 15 20 5 10 VGE (V) 15 20 Fig. 9 - Typical VCE vs. VGE TJ = -40°C 20 IC, Collector-to-Emitter Current (A) Fig. 10 - Typical VCE vs. VGE TJ = 25°C 140 120 100 80 60 40 20 0 T J = 175°C TJ = 25°C 18 16 14 VCE (V) 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 ICE = 18A ICE = 35A ICE = 70A 4 5 6 7 8 9 10 11 12 13 14 VGE, Gate-to-Emitter Voltage (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 60µs 4 www.irf.com IRGP4069DPbF/IRGP4069D-EPbF 4000 3500 3000 Swiching Time (ns) 1000 Energy (µJ) 2500 2000 1500 1000 500 0 0 10 20 30 EON tdOFF 100 tF EOFF tdON tR 10 40 50 60 70 0 10 20 30 40 50 60 70 IC (A) IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 3000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V 1000 2500 Swiching Time (ns) EON Energy (µJ) 2000 EOFF 1500 tdOFF 100 tF tdON 1000 tR 10 500 0 25 50 Rg ( Ω) 75 100 0 10 20 30 40 50 RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V 35 R G = 10Ω Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V 26 24 22 IRR (A) 30 IRR (A) 25 R G = 22Ω 20 18 20 R G = 47Ω 15 RG = 100Ω 10 10 20 30 40 IF (A) 50 60 70 16 14 0 20 40 60 80 100 RG (Ω) Fig. 17 - Typ. Diode IRR vs. IF TJ = 175°C Fig. 18 - Typ. Diode IRR vs. RG TJ = 175°C www.irf.com 5 IRGP4069DPbF/IRGP4069D-EPbF 26 24 22 QRR (nC) 2500 2250 10Ω 2000 70A 1750 47Ω 1500 1250 1000 100Ω 22Ω 18A 35A IRR (A) 20 18 16 14 200 300 400 500 600 700 diF /dt (A/µs) 100 200 300 400 500 600 700 800 900 diF /dt (A/µs) Fig. 19 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C Fig. 20 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C 20 300 Isc 15 400 R G = 10Ω 350 300 Energy (µJ) R G = 22Ω Time (µs) 10 Tsc 225 Current (A) 250 200 150 100 10 20 30 40 IF (A) 50 60 70 R G = 47Ω 150 5 75 RG = 100Ω 0 8 10 12 14 16 18 VGE (V) 0 Fig. 21 - Typ. Diode ERR vs. IF TJ = 175°C 10000 VGE, Gate-to-Emitter Voltage (V) Fig. 22 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 14 12 10 8 6 4 2 0 VCES = 400V VCES = 300V Cies Capacitance (pF) 1000 100 Coes Cres 10 0 100 200 300 400 500 VCE (V) 0 10 20 30 40 50 60 70 Q G, Total Gate Charge (nC) Fig. 23 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 24 - Typical Gate Charge vs. VGE ICE = 35A; L = 740µH 6 www.irf.com IRGP4069DPbF/IRGP4069D-EPbF 1 D = 0.50 Thermal Response ( Z thJC ) 0.1 0.20 0.10 0.05 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ1 τ2 τ3 τ4 τ4 Ri (°C/W) 0.01041 0.15911 0.23643 0.15465 0.000006 0.002035 τi (sec) 0.01 0.02 0.01 0.000142 0.013806 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ4 Ri (°C/W) 0.01716 0.35875 0.41334 0.000031 0.004192 τi (sec) 0.01 τ2 0.000517 τ3 τ4 Ci= τi/Ri Ci i/Ri 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.20121 0.024392 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 7 IRGP4069DPbF/IRGP4069D-EPbF L L 0 DUT 1K VCC 80 V + - DUT Rg VCC Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC DUT VCC -5V DUT / DRIVER Rg VCC SCSOA Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= V CC ICM 100K D1 DUT Rg 22K C sens e VCC G force DUT 0.0075µF E sense E force Fig.C.T.5 - Resistive Load Circuit Fig.C.T.6 - BVCES Filter Circuit 8 www.irf.com IRGP4069DPbF/IRGP4069D-EPbF 600 500 400 90% ICE 60 tf 50 40 30 20 5% V CE 600 500 400 ICE (A) TEST CURRENT 60 50 40 30 tr VCE (V) V CE (V) 200 100 0 Eoff Loss 200 100 0 -100 6.4 6.6 6.8 10% test current 90% test current 5% V CE 20 10 0 -10 5% ICE 10 0 -10 -100 -0.5 Eon Loss 7 7.2 0 0.5 1 1.5 2 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 40 30 20 10 0 -10 -20 -30 -0.3 Peak IRR 10% Peak IRR 700 QRR t RR 350 ICE 300 250 200 VCE 150 100 50 0 -50 0.5 5.5 Time (uS) Fig. WF4 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 600 500 400 Vce (V) 300 200 100 0 -100 -4.5 -0.2 -0.1 0 0.1 0.2 10.5 time (µS) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 www.irf.com ICE (A) 9 V F (V) ICE (A) 300 300 IRGP4069DPbF/IRGP4069D-EPbF Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSAQ@"à XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ Q6SUÃIVH7@S ,5)3( DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ à "$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6Sà Ã2Ã! X@@FÃ"$ GDI@ÃC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com IRGP4069DPbF/IRGP4069D-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information @Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@ XDUCÃ6TT@H7G`à GPUÃ8P9@Ã$%$& 6TT@H7G@9ÃPIÃXXÃ"$Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ I‚‡r)ÃÅQÅÃvÃh††r€iy’Ãyvr†v‡v‚ vqvph‡r†ÃÅGrhqA…rrÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P9@ Q6SUÃIVH7@S Ã"$C $%ÃÃÃÃÃÃÃÃÃÃÃ$& 96U@Ã8P9@ `@6SÃÃ2Ã! X@@FÃ"$ GDI@ÃC TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 10/09 www.irf.com 11