IRGP50B60PD1

PD - 94625B SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C IRGP50B60PD1 VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies G E Features • • • • • • • NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability n-channel Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ ID (FET equivalent) = 50A Benefits G C E • Parallel Operation for Higher Current Applications • Lower Conduction Losses and Switching Losses • Higher Switching Frequency up to 150kHz TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFRM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref. Fig. C.T.4) Clamped Inductive Load Current Max. 600 75 45 150 150 40 15 60 ±20 390 156 -55 to +150 Units V d A Diode Continous Forward Current Diode Continous Forward Current Maximum Repetitive Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw e V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance Parameter RθJC (IGBT) RθJC (Diode) RθCS RθJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 6.0 (0.21) Max. 0.32 1.7 ––– 40 ––– Units °C/W g (oz) 1 www.irf.com 1/25/06 IRGP50B60PD1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES ∆V(BR)CES/∆TJ Min. 600 — — — — — — Typ. — 0.31 1.7 2.00 2.45 2.60 3.20 4.0 -10 41 5.0 1.0 1.30 1.20 — Max. Units — — — 2.35 2.85 2.95 3.60 5.0 — — 500 — 1.70 1.60 ±100 nA V V Ω Conditions VGE = 0V, IC = 500µA 1MHz, Open Collector IC = 33A, VGE = 15V IC = 50A, VGE = 15V IC = 33A, VGE = 15V, TJ = 125°C IC = 50A, VGE = 15V, TJ = 125°C Ref.Fig Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage V/°C VGE = 0V, IC = 1mA (25°C-125°C) 4, 5,6,8,9 RG VCE(on) Internal Gate Resistance Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current 3.0 — — — — — — — gfe ICES VFM IGES IC = 250µA V mV/°C VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 33A, PW = 80µs µA mA V VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 125°C IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 125°C VGE = ±20V, VCE = 0V 7,8,9 10 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qgc Qge Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Coes eff. Coes eff. (ER) RBSOA trr Qrr Irr Total Gate Charge (turn-on) Gate-to-Collector Charge (turn-on) Gate-to-Emitter Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Time Related) Min. — — — — — — — — — — — — — — — — — — — — Typ. 205 70 30 255 375 630 30 10 130 11 580 480 1060 26 13 146 15 3648 322 56 215 163 Max. Units 308 105 45 305 445 750 40 15 150 15 700 550 1250 35 20 165 20 — — — — — pF VGE = 0V VCC = 30V ns µJ ns µJ nC IC = 33A VCC = 400V VGE = 15V Conditions Ref.Fig 17 CT1 IC = 33A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 25°C CT3 fÃà IC = 33A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 25°C CT3 fÃà f IC = 33A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 125°C IC = 33A, VCC = 390V VGE = +15V, RG = 3.3Ω, L = 200µH TJ = 125°C CT3 11,13 WF1,WF2 CT3 12,14 WF1,WF2 ÃfÃà 16 Effective Output Capacitance (Energy Related) Reverse Bias Safe Operating Area Diode Reverse Recovery Time Diode Reverse Recovery Charge Peak Reverse Recovery Current g g — — f = 1Mhz VGE = 0V, VCE = 0V to 480V TJ = 150°C, IC = 150A 15 3 CT2 FULL SQUARE — — — — — — 42 74 80 220 4.0 6.5 60 120 180 600 6.0 10 A nC ns VCC = 480V, Vp =600V Rg = 22Ω, VGE = +15V to 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C IF = 15A, VR = 200V, di/dt = 200A/µs IF = 15A, VR = 200V, di/dt = 200A/µs IF = 15A, VR = 200V, di/dt = 200A/µs 19 21 19,20,21,22 CT5 Notes:  RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. ‚ VCC = 80% (VCES), VGE = 20V, L = 28 µH, RG = 22 Ω. ƒ Pulse width limited by max. junction temperature. „ Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06. … Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES. Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES. 2 www.irf.com IRGP50B60PD1 90 80 70 60 IC (A) 450 400 350 300 Ptot (W) 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 T C (°C) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 Fig. 2 - Power Dissipation vs. Case Temperature 200 180 160 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 100 140 ICE (A) 120 100 80 60 40 20 IC A) 10 1 10 100 1000 0 0 1 2 3 4 5 6 7 8 9 10 VCE (V) VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE =15V 200 180 160 140 ICE (A) Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs 200 180 160 140 ICE (A) 120 100 80 60 40 20 0 0 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 120 100 80 60 40 20 0 VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V VGE = 6.0V 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs www.irf.com 3 IRGP50B60PD1 900 800 700 600 ICE (A) 10 T J = 25°C T J = 125°C 9 8 7 VCE (V) 500 400 300 200 100 0 0 5 10 VGE (V) 15 20 T J = 125°C T J = 25°C 6 5 4 3 2 1 0 5 10 VGE (V) ICE = 15A ICE = 33A ICE = 50A 15 20 Fig. 7 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 10 9 8 7 VCE (V) I sa t n o sF r adCr e t -I ( ) n t na e u owr ur n A F 100 Fig. 8 - Typical VCE vs. VGE TJ = 25°C 6 5 4 3 2 1 0 5 10 VGE (V) ICE = 15A ICE = 33A ICE = 50A 10 TJ = 150°C TJ = 125°C TJ = 25°C 1 15 20 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 9 - Typical VCE vs. VGE TJ = 125°C 1200 1000 800 Energy (µJ) Swiching Time (ns) 1000 Fig. 10 - Maximum. Diode Forward Characteristics tp = 80µs EON 600 EOFF 400 200 0 0 10 20 30 IC (A) 40 50 60 tdOFF 100 tF tdON tR 10 0 10 20 30 40 50 60 IC (A) Fig. 11 - Typ. Energy Loss vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) Fig. 12 - Typ. Switching Time vs. IC TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V. Diode clamp used: 30ETH06 (See C.T.3) 4 www.irf.com IRGP50B60PD1 1000 900 800 1000 Energy (µJ) EON 700 600 500 400 300 0 5 10 15 20 25 Swiching Time (ns) tdOFF 100 EOFF tdON tF tR 0 5 10 15 20 25 10 RG ( Ω) RG ( Ω) Fig. 13 - Typ. Energy Loss vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 40 Fig. 14 - Typ. Switching Time vs. RG TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V Diode clamp used: 30ETH06 (See C.T.3) 10000 Cies 30 Capacitance (pF) 1000 Eoes (µJ) 20 Coes 100 10 Cres 0 0 100 200 300 400 500 600 700 VCE (V) 10 0 20 40 60 80 100 VCE (V) Fig. 15- Typ. Output Capacitance Stored Energy vs. VCE 16 14 Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 1.4 Normalized V CE(on) (V) 250 12 10 VGE (V) 400V 1.2 8 6 4 2 0 0 50 100 150 200 Q G , Total Gate Charge (nC) 1.0 0.8 -50 0 50 100 150 200 T J (°C) Fig. 17 - Typical Gate Charge vs. VGE ICE = 33A Fig. 18 - Normalized Typ. VCE(on) vs. Junction Temperature IC = 33A, VGE= 15V www.irf.com 5 IRGP50B60PD1 100 100 VR = 200V TJ = 125°C TJ = 25°C 80 VR = 200V TJ = 125°C TJ = 25°C I F = 30A I F = 30A 60 I IRRM - (A) t rr - (ns) I F = 15A 10 IF = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/µs) 1000 1 100 di f /dt - (A/µs) 1000 Fig. 19 - Typical Reverse Recovery vs. dif/dt Fig. 20 - Typical Recovery Current vs. dif/dt 800 1000 VR = 200V TJ = 125°C TJ = 25°C 600 VR = 200V TJ = 125°C TJ = 25°C IF = 30A di(rec)M/dt - (A/µs) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/µs) 1000 100 100 di f /dt - (A/µs) 1000 Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt, 6 www.irf.com IRGP50B60PD1 1 Thermal Response ( Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 R1 R1 τJ τ1 τ2 R2 R2 τC τ τ2 0.01 0.01 0.02 SINGLE PULSE ( THERMAL RESPONSE ) τJ Ri (°C/W) τi (sec) 0.157 0.000346 0.163 4.28 τ1 0.001 Ci= τi/Ri Ci i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 0.0001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.01 0.02 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 Ri (°C/W) τi (sec) 0.363 0.000112 0.864 0.473 0.001184 0.032264 τ1 τ2 0.01 Ci= τi/Ri Ci τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 1000 IC, Collector-to-Emitter Current (A) 100 10 100µsec 1 0.1 0.01 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 1msec 10msec 1000 10000 VCE , Collector-to-Emitter Voltage (V) www.irf.com Fig. 25 - Forward SOA, TC = 25°C; TJ ≤ 150°C 7 IRGP50B60PD1 L L 0 DUT 1K VCC 80 V Rg DUT 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R= VCC ICM DUT / DRIVER Rg VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT VR = 200V 0.01 Ω L = 70µH D.U.T. dif/dt ADJUST D G IRFP250 S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit 8 www.irf.com IRGP50B60PD1 600 550 500 450 400 350 VCE (V) 300 250 200 150 100 50 0 -50 -100 -0.20 0.00 Eoff 5% V CE tf 90% ICE 60 50 40 30 20 10 0 -10 0.40 450 400 350 300 250 VCE (V) ICE (A) 90% ICE 90 80 70 60 50 40 30 5% V CE 10% ICE tr TEST CURRENT 200 150 100 50 0 Eon Loss 20 10 0 -10 0.20 5% ICE 0.20 -50 -0.10 0.00 0.10 Time (µs) Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 25°C using Fig. CT.3 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 25°C using Fig. CT.3 3 IF 0 trr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Fig. WF3 - Reverse Recovery Waveform and Definitions www.irf.com I CE (A) 9 IRGP50B60PD1 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC package is not recommended for Surface Mount Application. TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECTIFIER LOGO AS SEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 1/06 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/