IRGPS60B120KD

PD- 94239A IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Super-247 Package. VCES = 1200V VCE(on) typ. = 2.50V G E @ VGE = 15V, N-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation. ICE = 60A, Tj=25°C Super-247™ Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1200 105 ‚ 60 240 240 120 60 240 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Le Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package) Min. ––– ––– ––– ––– 20 (2) ––– ––– Typ. ––– ––– 0.24 ––– ––– 6.0 (0.21) 13 Max. 0.20 0.41 ––– 40 ––– ––– ––– Units °C/W N(kgf) g (oz) nH www.irf.com 1 8/18/04 IRGPS60B120KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 1200 ––– Temperature Coeff. of Breakdown Voltage ––– 0.40 Collector-to-Emitter Saturation Voltage ––– 2.33 ––– 2.50 ––– 2.79 ––– 3.04 Gate Threshold Voltage 4.0 5.0 Temperature Coeff. of Threshold Voltage ––– -12 Forward Transconductance ––– 34.4 Zero Gate Voltage Collector Current ––– ––– ––– 650 Diode Forward Voltage Drop ––– 1.82 ––– 1.93 ––– 1.96 ––– 2.13 Gate-to-Emitter Leakage Current ––– ––– Ref.Fig. Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, I C = 1.0mA, (25°C-125°C) 5, 6 2.50 IC = 50A VGE = 15V 7, 9 2.75 V IC = 60A 10 3.1 IC = 50A, TJ = 125°C 3.5 IC = 60A, TJ = 125°C 11 9,10 6.0 VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, I C = 1.0mA, (25°C-125°C) 11 ,12 ––– S VCE = 50V, IC = 60A, PW=80µs 500 µA VGE = 0V, VCE = 1200V 1350 VGE = 0V, VCE = 1200V, TJ = 125°C 2.10 IC = 50A 8 2.20 V IC = 60A 2.20 IC = 50A, TJ = 125°C 2.40 IC = 60A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions 340 510 IC = 60A 40 60 nC VCC = 600V 165 248 VGE = 15V 3214 4870 µJ IC = 60A, VCC = 600V 4783 5450 VGE = 15V,RG = 4.7Ω, L =200µH 8000 10320 Ls = 150nH T J = 25°C 5032 6890 TJ = 125°C 7457 8385 µJ Energy losses include "tail" and 12500 15275 diode reverse recovery. 72 94 IC = 15A, VCC = 600V 32 45 VGE = 15V, RG = 4.7Ω L =200µH 366 400 ns Ls = 150nH, TJ = 125°C 45 58 4300 ––– VGE = 0V 395 ––– pF VCC = 30V 160 ––– f = 1.0MHz TJ = 150°C, IC = 240A, Vp =1200V FULL SQUARE VCC = 1000V, VGE = +15V to 0V RG = 4.7 Ω TJ = 150°C, Vp =1200V 10 ––– ––– µs VCC = 900V, VGE = +15V to 0V, RG = 4.7 Ω ––– 3346 ––– µJ TJ = 125°C ––– 180 ––– ns VCC = 600V, IF = 60A, L =200µH ––– 50 ––– A VGE = 15V,RG = 4.7Ω, Ls = 150nH Ref.Fig. 23 CT1 CT4 WF1 WF2 13,15 14, 16 CT4 WF1 WF2 22 4 CT2 CT3 WF4 17,18,19 SCSOA Erec trr Irr Short Circuit Safe Operting Area Reverse Recovery energy of the diode Diode Reverse Recovery time Diode Peak Reverse Recovery Current 20, 21 CT4,WF3 2 www.irf.com IRGPS60B120KD 140 LIMITED BY PACKAGE 120 100 600 500 700 P tot (W) 0 20 40 60 80 100 120 140 160 IC (A) 80 60 40 20 0 400 300 200 100 0 0 50 100 150 200 T C (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature† Fig. 2 - Power Dissipation vs. Case Temperature 1000 1000 100 2 µs 10 µs 100 IC (A) 10 DC 1 100 µs 1ms IC A) 10 1 10 100 1000 10000 10ms 0.1 1 10 100 VCE (V) 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJS ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGPS60B120KD 120 100 80 ICE (A) 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 80 ICE (A) VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 40 20 0 0 1 2 3 VCE (V) 4 5 60 40 20 0 0 1 2 3 VCE (V) 4 5 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 120 100 80 ICE (A) 120 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 100 80 IF (A) -40°C 25°C 125°C 60 40 20 0 0 1 2 3 VCE (V) 4 5 60 40 20 0 0 1 VF (V) 2 3 Fig. 7 - Typ. IGBT Output Characteristics TJ = 125°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics tp = 80µs 4 www.irf.com IRGPS60B120KD 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 30A ICE = 60A ICE = 120A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 30A ICE = 60A ICE = 120A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 500 450 400 350 ICE (A) T J = 25°C T J = 125°C VCE (V) 12 10 8 6 4 2 5 10 VGE (V) ICE = 30A ICE = 60A ICE = 120A 300 250 200 150 100 50 0 0 5 10 VGE (V) T J = 125°C T J = 25°C 15 20 15 20 Fig. 11 - Typical VCE vs. VGE TJ = 125°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 IRGPS60B120KD 12000 10000 8000 Energy (µJ) 1000 tdOFF 6000 4000 2000 0 0 20 EOFF Swiching Time (ns) 100 tdON tF tR EON 40 IC (A) 60 80 100 10 20 40 60 80 100 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 125°C; L=200µH; VCE= 600V RG= 4.7Ω; VGE= 15V 25000 10000 20000 tdOFF Swiching Time (ns) EON Energy (µJ) 15000 1000 EOFF 10000 tdON tR 100 tF 5000 0 0 50 100 150 10 0 50 100 150 RG ( Ω) RG ( Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 60A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 125°C; L=200µH; VCE= 600V ICE= 60A; VGE= 15V 6 www.irf.com IRGPS60B120KD 70 60 50 40 60 RG = 4.7Ω 50 IRR (A) IRR (A) 60 80 100 40 30 20 10 0 0 20 RG = 22 Ω RG = 47 Ω RG = 100 Ω 30 20 10 0 40 0 50 100 150 IF (A) RG ( Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 125°C Fig. 18 - Typical Diode IRR vs. RG TJ = 125°C; IF = 60A 60 12 RG = 4.7Ω 50 11 10 9 47 Ω 22Ω 4.7Ω 90A 60A 40 Q RR (µC) RG = 22 Ω 8 7 6 5 100Ω 30A IRR (A) 30 RG = 47 Ω 20 RG = 100 Ω 10 4 3 2 0 500 1000 1500 0 0 500 1000 1500 diF /dt (A/µs) diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 600V; VGE= 15V; ICE= 60A; TJ = 125°C Fig. 20 - Typical Diode QRR VCC= 600V; VGE= 15V;TJ = 125°C www.irf.com 7 IRGPS60B120KD 4000 3500 3000 Energy (µJ) 2500 2000 1500 1000 500 0 0 4.7Ω 22Ω 47Ω 100Ω 20 40 60 80 100 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 125°C 10000 16 Cies 14 12 600V 800V Capacitance (pF) 1000 10 Coes Cres 100 VGE (V) 8 6 4 2 10 0 20 40 60 80 100 0 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) VCE (V) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 60A; L = 600µH 8 www.irf.com IRGPS60B120KD 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.01 0.02 0.1 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 0.1 1 0.01 1E-005 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 24. Normalized Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.01 0.02 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 0.001 0.01 0.01 1E-005 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 25. Normalized Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGPS60B120KD L L DUT 0 VCC 80 V Rg DUT 1000V 1K Fig.C.T.1 - Gate Charge Circuit (turn-on) Fig.C.T.2 - RBSOA Circuit Driver D C diode clamp / DUT L 900V - 5V DUT / DRIVER Rg VCC DUT Fig.C.T.3 - RBSOA Circuit Fig.C.T.4 - RBSOA Circuit R= VCC ICM DUT Rg VCC Fig.C.T.5 - RBSOA Circuit 10 www.irf.com IRGPS60B120KD Fig. WF1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 900 800 700 600 tr 500 VCE (V) 400 300 200 5% V CE 90% ICE Fig. WF2 - Typ. Turn-On Loss Waveform @ Tj=125°C using Fig. CT.4 90 80 70 60 800 700 600 500 TEST CURRENT 120 105 90 75 90% test current 50 ICE (A) VCE (V) 40 30 20 5% ICE Eof f Loss 300 200 100 0 Eon Loss tr 10% test current 5% V CE 45 30 15 0 100 0 -100 -0.50 10 0 -10 2.50 0.50 1.50 -100 4.10 4.30 4.50 -15 4.70 Time (µs) Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 400 200 QRR 0 tRR VCE (V) Time (µs) Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 1000 900 V CE 800 700 600 ICE 400 350 300 250 200 150 100 50 0 5.00 10.00 15.00 ICE (A) 500 450 80 60 40 20 0 Peak IRR 10% Peak IRR VF (V) IF (A) -200 -400 -600 -800 500 400 300 200 -20 -40 -60 100 0 -5.00 -1000 -0.25 0.25 time (µS) 0.75 0.00 time (µS) www.irf.com 11 ICE (A) 400 60 IRGPS60B120KD Super-247™ Package Outline 0.13 [.005] 16.10 [.632] 15.10 [.595] 5.50 [.216] 4.50 [.178] 2.15 [.084] 1.45 [.058] 0.25 [.010] 13.90 [.547] 13.30 [.524] BA 2X R 3.00 [.118] 2.00 [.079] A 1.30 [.051] 0.70 [.028] 20.80 [.818] 19.80 [.780] 4 16.10 [.633] 15.50 [.611] 4 C 1 2 3 B Ø 1.60 [.063] MAX. E E 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 2X 3X 1.60 [.062] 1.45 [.058] BA 3X 1.30 [.051] 1.10 [.044] 0.25 [.010] SECT ION E-E NOT ES: 1. DIMENS IONING AND T OLERANCING PER AS ME Y14.5M-1994. 2. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ] 3. CONT ROLLING DIMENS ION: MILLIMET ER 4. OUT LINE CONFORMS T O JEDEC OUT LINE T O-274AA 2.35 [.092] 1.65 [.065] LEAD ASS IGNMENT S MOSFET 1 - GAT E 2 - DRAIN 3 - S OURCE 4 - DRAIN IGBT 1 - GAT E 2 - COLLECT OR 3 - EMIT T ER 4 - COLLECT OR Super-247™ Part Marking Information EXAMPLE: THIS IS AN IRFPS37N50A WITH ASSEMBLY LOT CODE A8B9 INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPS37N50A PART NUMBER A8B9 0020 Notes:  VCC = 80% (VCES), VGE = 20V, L = 100 µH, RG = 4.7Ω. ‚ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 105A. DATE CODE (YYWW) YY = YEAR WW = WEEK TOP Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 12 www.irf.com