IRGSL14C40L

PD - 93891A Ignition IGBT Features •Most Rugged in Industry •Logic-Level Gate Drive •> 6KV ESD Gate Protection •Low Saturation Voltage •High Self-clamped Inductive Switching Energy The advanced IGBT process family includes a MOS gated, N-channel logic level device which is intended for coil-on-plug automotive ignition applications and small-engine ignition circuits. Unique features include on-chip active voltage clamps between the Gate-Emitter and Gate-Collector which provide over voltage protection capability in ignition circuits. Absolute Maximum Ratings Parameter Max Clamped 20 14 1 10 Clamped 125 54 - 40 to 175 - 40 to 175 6 11.5 Unit V A A mA IGBT with on-chip Gate-Emitter and Gate-Collector clamps TERMINAL DIAGRAM Collector IRGS14C40L IRGSL14C40L IRGB14C40L •BVCES = 370V min, 430V max •IC @ TC = 110°C = 14A •VCE(on) typ= 1.2V @7A @25°C • IL(min)=11.5A @25°C,L=4.7mH Gate R1 R2 Description Emitter JEDEC TO-263AB JEDEC TO-262AA JEDEC TO-220AB IRGS14C40L IRGSL14C40L IRGB14C40L NOTE: IRGS14C40L is available in tape and reel. Add a suffix of TRR or TRL to the part number to determine the orientation of the device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL. Condition RG = 1K ohm VGE = 5V VGE = 5V VCES IC @ TC = 25°C IC @ TC = 110°C IG IGp VGE PD @ TC = 25°C TJ TSTG VESD IL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Continuous Gate Current Peak Gate Current Gate-to-Emitter Voltage Maximum Power Dissipation mA tPK = 1ms, f = 100Hz V W W °C °C KV C = 100pF, R = 1.5K ohm A L = 4.7mH, T = 25°C PD @ T = 110°C Maximum Power Dissipation Operating Junction and Storage Temperature Range Electrostatic Voltage Self-clamped Inductive Switching Current Thermal Resistance Parameter Min Typ Max 1.2 40 °C/W Unit RθJC RθJA ZθJC www.irf.com Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (PCB Mounted, Steady State) Transient Thermal Impedance, Juction-to-Case (Fig.11) Page 1 4/7/2000 Ignition IGBT Parameter BVCES Collector-to-Emitter Breakdown Voltage BVGES Gate-to-Emitter Breakdown Voltage I CES Collector-to-Emitter Leakage Current 24 10 28 75 20 30 Min Typ Max 370 400 10 12 15 100 BVCER Emitter-to-Collector Breakdown Voltage R1 R2 Gate Series Resistance Gate-to-Emitter Resistance 430 Unit V V µA µA V ohm K ohm I G=2m A IRGS14C40L IRGSL14C40L IRGB14C40L Conditions R G = 1K ohm, I C=7A, VGE = 0V R G=1K ohm, VCE = 250V R G=1K ohm, VCE = 250V, TJ =150°C I C = -10m A Fig Off-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) On-State Electrical Charasteristics @ TJ = 25°C (unless otherwise specified) Parameter VCE(on) Collector-to-Emitter Saturation Voltage Min Typ Max 1.2 1.40 V 1.35 1.55 1.35 1.55 1.5 1.6 VGE(th) Gate Threshold Voltage gfs IC Transconductance Collector Current 1.3 0.75 10 20 15 1.8 1.7 1.8 2.2 1.8 19 S A V 1.55 1.75 Unit Conditions I C = 7A, VGE = 4.5V I C = 10A, VGE = 4.5V I C = 10A, VGE = 4.5V, TC= -40 C I C = 14A, VGE = 5.0V, TC= -40 C I C = 14A, VGE = 5.0V o I C = 14A, VGE = 5.0V, TC=150 C VCE = VGE, I C = 1 m A, TC=25 C o VCE = VGE, I C = 1 m A, TC=150 C VCE = 25V, I C = 10A, TC=25 C VCE = 10V, VGE = 4.5V o o o o Fig 1 2 4 3, 5 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Q ge Q gc Total Gate charge Gate - Emitter Charge Gate - Collector Charge 0.6 1.6 3.7 Min Typ Max 27 2.5 10 0.9 2.8 6 550 100 12 25 IL Self-Clamped Inductive Switching Current 15.5 11.5 16.5 7.5 6 t SC Short Circuit Withstand Time 120 µs A 1.35 4 8.3 825 150 18 pF µs nC Unit Conditions I C = 10A, VCE=12V, VGE=5V I C = 10A, VCE=12V, VGE=5V I C = 10A, VCE=12V, VGE=5V VGE=5V, RG=1K ohm, L=1mH, VCE=14V VGE=5V, RG=1K ohm, L=1mH, VCE=14V VGE=5V, RG=1K ohm, L=1mH, VCE=300V VGE=0V, VCE=25V, f=1M H z VGE=0V, VCE=25V, f=1M H z VGE=0V, VCE=25V, f=1M H z L=0.7m H, TC=25°C L=2.2m H, TC=25°C L=4.7m H, TC=25°C L=1.5m H, TC=150°C L=4.7m H, TC=150°C L=8.7m H, TC=150°C TJ =150 C, VCC = 16V, L = 10µH R G = 1K ohm, VGE = 5V 14 o Fig 7 15 12 14 t d(on) Turn - on delay time Rise time tr t d(off) Turn - off delay time C ies C oes C res Input Capacitance Output Capacitance Reverse Transfer Capacitance 6 9 10 13 14 www.irf.com Page 2 4/7/2000 Ignition IGBT Fig.1 - Typ. Output Characteristics TJ=25°C 60 VGE = 10 V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V IRGS14C40L IRGSL14C40L IRGB14C40L Fig.2 - Typ. Output Characteristics TJ=125°C 60 VGE = 10 V VGE = 5.0V VGE = 4.5V VGE = 4.0V VGE = 3.7V 50 50 40 IC (A) 40 IC (A) 0 1 2 3 VCE (V) 4 5 6 30 30 20 20 10 10 0 0 0 1 2 3 VCE (V) 4 5 6 Fig.3 - Transfer Characteristics VCE=20V; tp=20µs 100 90 80 70 TJ = 25° C TJ = 125°C Fig.4 - Typical VCE vs TJ VGE=4.5V 1.6 1.5 I C = 10A 1.4 V CE ( V ) I CE (A ) 60 50 40 30 20 10 0 0 2 4 6 8 10 VGE (V) 1.3 1.2 1.1 I C = 7A 1.0 -50 0 50 100 150 200 TJ (°C) Page 3 4/7/2000 www.irf.com Ignition IGBT Fig.5 - Typical VGE(th) vs TJ I C=1mA 2.2 IRGS14C40L IRGSL14C40L IRGB14C40L Fig.6 - Typ. Capacitance vs VCE VGE=0V; VCE=25V; f=1MHz 1000 2.0 Capacitance (pF) C ies 1.8 V GE(th) ( V ) 100 C oes 1.6 1.4 10 C res 1.2 1.0 -50 0 50 100 150 200 TJ (°C) 1 1 10 VCE (V) 100 Fig.7 - Typ. Gate Charge vs VGE I C=10A; VCE=12V; VGE=5V 5.5 5.0 4.5 4.0 3.5 V GE (V ) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 QG, Total Gate Charge (nC) www.irf.com Page 4 Fig.8 - Typical VCE vs VGE 20 18 16 14 V CE (V ) 12 10 8 6 4 2 0 2.5 3 3.5 VGE (V) 4/7/2000 I C= 7A; 125°C I C = 7A; 25°C I C=10A; 125°C I C=10A; 25°C 4 4.5 Ignition IGBT Fig.9 - Self-clamp Avalance Current vs Inductance @ 25°C 40 Open-secondary Current (A) IRGS14C40L IRGSL14C40L IRGB14C40L Fig.10 - Self-clamp Avalance Current vs Inductance @ 150°C 20 35 Open-secondary Current (A) 18 16 14 12 10 8 6 4 Minimum Typical 30 25 Typical 20 15 Minimum 10 0 1 2 3 4 5 Inductance (mH) 0 2 4 6 8 Inductance (mH) 10 Fig.11 - Transient Thermal Impedance, Junction-to-Case 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1, Rectangular Pulse Duration (sec) www.irf.com Page 5 4/7/2000 Ignition IGBT IRGS14C40L IRGSL14C40L IRGB14C40L Fig.12 - Switching Waveform for Time Measurement VGE= 5V; RG= 1KΩ; L= 1mH; VCE= 14V; used circuit in Fig.14 450 400 350 (V) 300 250 200 150 100 50 0 -50 -14 -10 -6 t d (o f f ) tr -2 t (µs) 2 6 10 14 Vcl (measured) 8 VClamp 7 6 5 4 V GE (V ) clamp VGE 3 2 1 0 -1 -2 V Fig.13 - Self-clamped Inductive Switching Waveform L=4.7mH; TC=25°C; used circuit in Fig.14 12 10 8 (A) CE 500 I CE V clamp 400 V clamp (V ) 300 200 100 0 -100 6.E-05 6 4 2 0 -2.E-05 I -1.E-05 0.E+00 1.E-05 2.E-05 time 3.E-05 4.E-05 5.E-05 www.irf.com Page 6 4/7/2000 Ignition IGBT Fig.14 - Test Circuit IRGS14C40L IRGSL14C40L IRGB14C40L 0.47 Ω L 1KΩ D.U.T. Ice Fig.15 - Gate Charge Circuit L VC C 0 DUT 1K www.irf.com Page 7 4/7/2000 Ignition IGBT IRGS14C40L IRGSL14C40L IRGB14C40L TO-263AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A2 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) 10.16 (.400) REF. 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X www.irf.com Page 8 4/7/2000 Ignition IGBT IRGS14C40L IRGSL14C40L IRGB14C40L TO-263AB Package Outline in Tape and Reel Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com Page 9 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 4/7/2000 Ignition IGBT IRGS14C40L IRGSL14C40L IRGB14C40L TO-262AA Package Outline Dimensions are shown in millimeters (inches) www.irf.com Page 10 4/7/2000 Ignition IGBT IRGS14C40L IRGSL14C40L IRGB14C40L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. www.irf.com Page 11 4/7/2000