IRGSL6B60K

PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K D2Pak IRGS6B60K TO-262 IRGSL6B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount‚ Junction-to-Ambient (PCB Mount, steady state)ƒ Weight Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 1.4 ––– 62 40 ––– Units °C/W g www.irf.com 1 8/18/04 IRG/B/S/SL6B60K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 ––– Temperature Coeff. of Breakdown Voltage ––– 0.3 Collector-to-Emitter Saturation Voltage 1.5 1.80 ––– 2.20 Gate Threshold Voltage 3.5 4.5 Temperature Coeff. of Threshold Voltage ––– -10 Forward Transconductance ––– 3.0 Zero Gate Voltage Collector Current ––– 1.0 ––– 200 Gate-to-Emitter Leakage Current ––– ––– Max. Units Conditions ––– V VGE = 0V, IC = 500µA ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-150°C) 2.20 V IC = 5.0A, VGE = 15V 2.50 IC = 5.0A,VGE = 15V, TJ = 150°C 5.5 V VCE = VGE, IC = 250µA ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-150°C) ––– S VCE = 50V, IC = 5.0A, PW=80µs 150 µA VGE = 0V, VCE = 600V 500 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Ref.Fig. 5, 6,7 8,9,10 8,9,10 11 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf Cies Coes Cres RBSOA SCSOA Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operting Area Short Circuit Safe Operting Area Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– IC = 5.0A ––– nC VCC = 400V ––– VGE = 15V 210 µJ IC = 5.0A, VCC = 400V 245 VGE = 15V,R G = 100Ω, L =1.4mH 455 Ls = 150nH TJ = 25°C „ 34 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 230 ns Ls = 150nH, TJ = 25°C 22 260 IC = 5.0A, VCC = 400V 300 µJ VGE = 15V,R G = 100Ω, L =1.4mH 560 Ls = 150nH TJ = 150°C „ 37 IC = 5.0A, VCC = 400V 26 VGE = 15V, RG = 100Ω L =1.4mH 255 ns Ls = 150nH, TJ = 150°C 27 ––– VGE = 0V ––– pF VCC = 30V ––– f = 1.0MHz TJ = 150°C, IC = 26A, Vp =600V FULL SQUARE VCC = 500V, VGE =+15V to 0V,RG = 100Ω µs TJ = 150°C, Vp =600V, RG = 100Ω 10 ––– ––– VCC = 360V, VGE = +15V to 0V Typ. 18.2 1.9 9.2 110 135 245 25 17 215 13.2 150 190 340 28 17 240 18 290 34 10 Ref.Fig. 17 CT1 CT4 CT4 CT4 12,14 WF1WF2 13, 15 CT4 WF1 WF2 16 4 CT2 CT3 WF3 Note  to „ are on page 13 2 www.irf.com IRG/B/S/SL6B60K 15 100 90 80 10 Ptot (W) IC (A) 70 60 50 40 30 20 10 5 0 0 20 40 60 80 100 120 140 160 T C (°C) 0 0 20 40 60 80 100 120 140 160 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 µs IC (A) IC A) 10 1 100 µs DC 1ms 0.1 1 10 100 VCE (V) 1000 10000 1 0 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRG/B/S/SL6B60K 20 18 16 14 ICE (A) 20 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V ICE (A) 18 16 14 12 10 8 6 4 2 0 12 10 8 6 4 2 0 0 VGE VGE VGE VGE VGE = 18V = 15V = 12V = 10V = 8.0V 1 2 3 VCE (V) 4 5 6 0 1 2 3 VCE (V) 4 5 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 20 18 16 14 ICE (A) 12 10 8 6 4 2 0 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1 2 3 VCE (V) 4 5 6 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80µs 4 www.irf.com IRG/B/S/SL6B60K 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 3.0A ICE = 5.0A ICE = 10A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 3.0A ICE = 5.0A ICE = 10A 12 10 8 6 4 2 0 Fig. 8 - Typical VCE vs. VGE TJ = -40°C Fig. 9 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 VCE (V) 40 35 30 ICE = 3.0A ICE = 5.0A ICE = 10A T J = 25°C T J = 150°C 10 8 6 4 2 0 5 10 VGE (V) ICE (A) 12 25 20 15 10 5 T J = 150°C T J = 25°C 0 5 10 VGE (V) 15 20 15 20 0 Fig. 10 - Typical VCE vs. VGE TJ = 150°C Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 IRG/B/S/SL6B60K 700 600 500 Energy (µJ) 1000 tdOFF Swiching Time (ns) EON 100 400 300 200 100 0 0 5 10 IC (A) 15 20 EOFF tF tdON 10 tR 1 0 5 10 15 20 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.4mH; VCE= 400V RG= 100Ω; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150°C; L=1.4mH; VCE= 400V RG= 100Ω; VGE= 15V 250 1000 200 EOFF Swiching Time (ns) 100 tdOFF Energy (µJ) 150 EON 100 tdON tR tF 10 50 0 0 50 100 150 200 1 0 50 100 150 200 R G ( Ω) RG ( Ω) Fig. 14 - Typ. Energy Loss vs. RG TJ = 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V Fig. 15 - Typ. Switching Time vs. RG TJ = 150°C; L=1.4mH; VCE= 400V ICE= 5.0A; VGE= 15V 6 www.irf.com IRG/B/S/SL6B60K 1000 16 Cies 14 300V 12 400V Capacitance (pF) 100 10 Coes VGE (V) 8 6 4 2 0 Cres 10 1 1 10 100 0 5 10 15 20 VCE (V) Q G , Total Gate Charge (nC) Fig. 16- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 17 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600µH 10 Thermal Response ( Z thJC ) 1 D = 0.50 0.20 0.10 0.05 0.01 0.02 R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 τJ Ri (°C/W) τi (sec) 0.708 0.00022 0.447 0.219 0.00089 0.01037 τ1 τ2 Ci= τi /Ri Ci= i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-4 1E-3 1E-2 1E-1 0.001 1E-6 1E-5 t1 , Rectangular Pulse Duration (sec) Fig 18. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) www.irf.com 7 IRG/B/S/SL6B60K L L DUT 0 VCC 80 V + - DUT 480V 1K Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT Driver DC L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= VCC ICM DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 8 www.irf.com IRG/B/S/SL6B60K 450 400 350 300 250 VCE (V) tf 4 5% V CE 5% ICE 90% ICE 9 8 7 6 5 500 25 400 20 300 TEST CURRENT 15 ICE (A) 200 150 100 50 0 -50 -0.20 Eof f Loss VCE (V) I CE (A) 200 90% test current 10 3 2 1 100 tr 0 10% test current 5% V CE 5 0 Eon Loss 0 -1 0.80 0.30 time(µs) -100 16.00 16.10 16.20 time (µs) 16.30 -5 16.40 Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 500 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 50 400 VCE 300 VCE (V) ICE 40 30 ICE (A) 200 20 100 10 0 -5.00 0.00 5.00 time (µS) 10.00 0 15.00 Fig. WF3- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com 9 IRG/B/S/SL6B60K TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS HEXFET GATE 1LEAD ASSIGNMENTS IGBTs, CoPACK 1234GATE COLLECTOR EMITTER COLLECTOR 14.09 (.555) 13.47 (.530) 21- GATE DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMP L E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C 10 www.irf.com IRG/B/S/SL6B60K D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMB LED ON WW 02, 2000 IN T HE AS S EMB LY LINE "L" Note: "P" in as sembly line pos ition indicates "L ead-F ree" INT ERNAT IONAL RECT IFIER LOGO AS S EMB LY LOT CODE PART NUMB E R F 530S DAT E CODE YEAR 0 = 2000 WEEK 02 L INE L OR INT E RNAT IONAL RE CT IF IER LOGO ASS E MB LY LOT CODE PART NUMBER F530S DAT E CODE P = DE SIGNAT E S LE AD-F RE E PRODUCT (OPT IONAL) YEAR 0 = 2000 WEE K 02 A = AS SE MBLY SIT E CODE www.irf.com 11 IRG/B/S/SL6B60K TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking InformaEXAMPLE: THIS IS AN IRL 3103L LOT CODE 1789 AS S EMB LED ON WW 19, 1997 IN T HE AS S EMB LY LINE "C" Note: "P" in ass embly line position indicates "L ead-F ree" INTERNATIONAL RECT IF IER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEE K 19 LINE C OR INTE RNATIONAL RECT IFIER L OGO PART NUMBER DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBL Y S IT E CODE AS S EMBL Y LOT CODE 12 www.irf.com IRG/B/S/SL6B60K D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes:  VCC= 80% (VCES), VGE =20V, L = 100µH, RG = 100Ω ‚ This is only applied to TO-220AB package ƒ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. „ Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE. TO-220 package is not recommended for Surface Mount Application Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/04 www.irf.com 13