IRGVH50F

PD -90928A IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses C Fast Speed IGBT VCES = 1200V G E VCE(on) max = 2.9V @VGE = 15V, IC = 25A Description n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device. TO-258AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current ➀ Clamped Inductive Load Current ➁ Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max. 1200 45 25 180 90 ±20 200 80 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 10.5 (typical) Units V A V W °C g Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units — — — — 0.625 0.21 — — 30 °C/W Test Conditions For footnotes refer to the last page www.irf.com 1 02/20/02 IRGVH50F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 ––– ––– V VGE = 0V, IC = 100 µA Emitter-to-Collector Breakdown Voltage ➂ 22 ––– ––– V VGE = 0V, IC = 1.0 A ––– 2.1 2.9 IC = 25A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage ––– 2.5 ––– IC = 45A See Fig.2, 5 V ––– 2.4 ––– IC = 25A , TJ = 125°C VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250 µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -14 ––– mV/°C VCE = VGE, IC = 250 µA gfe Forward Transconductance T 7.5 ––– ––– S VCE = 100V, IC = 25A ––– ––– 100 VGE = 0V, VCE = 960V µA ICES Zero Gate Voltage Collector Current ––– ––– 1200 VGE = 0V, VCE = 960V, TJ = 125°C IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Max. Units Conditions 100 IC = 25A 21 nC VCC = 400V See Fig. 8 ➄ 43 VGE = 15V 68 IC = 25A, VCC = 400V 26 VGE = 15V, RG = 2.35Ω ➄ ns 480 Energy losses include "tail" 330 See Fig. 9, 10, 14 ––– mJ ––– 8.2 ––– TJ = 125°C ––– IC = 25A, VCC = 400V ns ➄ ––– VGE = 15V, RG = 2.35Ω ––– Energy losses include "tail" ––– mJ See Fig. 11, 14 ––– nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) ––– 2400 ––– VGE = 0V ––– 140 ––– pF VCC = 30V See Fig. 7 ––– 28 ––– ƒ = 1.0MHz Typ. ––– ––– ––– ––– ––– ––– ––– 1.4 4.5 5.9 33 15 590 500 13 6.8 Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page 2 www.irf.com IRGVH50F Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRGVH50F Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRGVH50F Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRGVH50F 125°C Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRGVH50F L 50V 1 00 0V VC * D .U .T. RL = 0 - 960V 960V 4 X IC@25°C 480µF 960V R Q * Driver s am e ty p e as D .U .T.; Vc = 80% of V ce ( m ax ) * Note: D ue to the 50V p ow er s u p p l y , p ulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 960V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t =5µ s E o ff www.irf.com 7 IRGVH50F Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. ➄ Equipment limitation. R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω Case Outline and Dimensions — TO-258AA A 4.19 [.165] 3.93 [.155] 17.65 [.695] 17.39 [.685] 6.85 [.270] 6.09 [.240] 0.12 [.005] 1.14 [.045] 0.88 [.035] 26.59 [1.047] 25.33 [ .997] 17.95 [.707] 17.70 [.697] 21.20 [.835] 20.70 [.815] 13.97 [.550] 13.46 [.530] B R 3.68 [.145] 3.18 [.125] 8.63 [.340] 7.62 [.300] C 3X 1.65 [.065] 1.39 [.055] CA C B 3.68 [.145] 3.43 [.135] 14.22 [.560] 11.43 [.450] 5.08 [.200] 2X 0.50 [.020] 0.25 [.010] NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET E RS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUT LINE T O-258AA B EFORE LEADFORMING. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com