IRH4054

PD - 90883B RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA/AE) Product Summary Part Number Radiation Level IRH7054 100K Rads (Si) IRH3054 300K Rads (Si) IRH4054 600K Rads (Si) IRH8054 1000K Rads (Si) R DS(on) 0.025Ω 0.025Ω 0.025Ω 0.025Ω IRH7054 60V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY HEXFET TECHNOLOGY ™ ® ID 45*A 45*A 45*A 45*A TO-204AE International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Absolute Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by pin diameter 45* 32 210 150 1.2 ±20 500 35 15 3.5 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical ) g www.irf.com 1 8/9/01 IRH7054 Pre-Irradiation @ Tjj = 25°C (Unless Otherwise Specified) T Min 60 — — — 2.0 12 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.053 — — — — — — — — — — — — — — — 10 — — 0.025 0.028 4.0 — 25 250 100 -100 200 60 75 27 100 75 75 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 32A ➃ VGS = 12V, ID = 45A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A ➃ VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 30V VDD =30V, ID = 35A VGS =12V, RG = 2.35Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4100 2000 560 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 45 210 1.4 280 2.2 Test Conditions A V nS µC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units — — — — 0.83 — 30 0.12 — °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRH7054 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Min Min 60 2.0 — — — — — — 100K Rads(Si) Max — 4.0 100 -100 25 0.027 0.027 1.4 300 - 1000K Rads (Si) Min Max Units V nA µA Ω Ω V Test Conditions Test BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (TO-204AE) Diode Forward Voltage" ➃ 60 1.25 — — — — — — — 4.5 100 -100 50 0.027 0.027 1.4 VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=48V, VGS =0V VGS = 12V, ID =45A VGS = 12V, ID =45A VGS = 0V, IS = 35A 1. Part numbers IRH7054, 2. Part number IRH3054, IRH4540 and IRH8054 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion I Br LET Energy MeV/(mg/cm )) (MeV) 59.9 345 36.8 305 Range (µm) 32.8 39 VDS(V) @VGS=0V @VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V 60 60 45 40 30 40 35 30 25 20 70 60 50 VDS 40 30 20 10 0 0 -5 -10 VGS -15 -20 BR I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRH7054 Pre-Irradiation 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 25 °C 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 150 °C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 52A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 1.5 100 1.0 0.5 10 V DS = 25V 20µs PULSE WIDTH 5 6 7 8 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRH7054 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A VDS = 48V VDS = 30V 16 C, Capacitance (pF) 6000 Ciss 4000 12 Coss 2000 8 Crss 0 4 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 25 ° C 100 ID , Drain Current (A) TJ = 150 ° C 100 100us 1ms 10 10 10ms 1 0.4 V GS = 0 V 1.0 1.6 2.2 2.8 3.4 4.0 1 TC = 25 °C TJ = 150 °C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRH7054 Pre-Irradiation 60 LIMITED BY PACKAGE 50 VDS VGS RG RD D.U.T. + ID , Drain Current (A) 40 -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 0.50 Thermal Response (Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRH7054 1200 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 15V 1000 ID 16A 22A 35A VDS L DRIVER 800 600 RG D.U.T IAS tp + - VDD A V/5 20V 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRH7054 Pre-Irradiation Foot Notes: F oot ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.49mH Peak IL = 35A, VGS =12V ➂ ISD ≤ 35A, di/dt ≤ 150A/µs, VDD ≤ 60V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. Total 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. T otal 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-204AE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01 8 www.irf.com