IRH9150

PD - 90879C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-204AE Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ T C = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -22 -14 -88 150 1.2 ±20 500 -22 1.5 -23 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g 300 ( 0.063 in.(1.6mm) from case for 10s) 11.5 (Typical ) www.irf.com 1 02/18/03 IRH9150 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — — -2.0 11 — — — — — — — — — — — — Typ Max Units — -0.093 — — — — — — — — — — — — — — — 10 — — 0.075 0.080 -4.0 — -25 -250 -100 100 200 35 48 40 150 100 190 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -14A ➃ VGS = -12V, ID = -22A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -14A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -50V VDD =-50V, ID = -22A VGS =-12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from Package) with Source wires internally bonded from Source Pin to Drain Pad C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4300 1100 310 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -22 -88 -3.0 250 1.5 Test Conditions A V nS µC Tj = 25°C, IS = -22A, V GS = 0V ➃ Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units — — — — 0.83 — 30 0.12 — °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRH9150 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance Diode Forward Voltage ➃ 100K Rads(Si)1 300K Rads (Si)2 Units V nA µA Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS = -20V VGS = 20 V VDS=-80V, VGS =0V VGS = -12V, ID =-14A VGS = 0V, IS = -22A Min -100 -2.0 — — — — — Max — -4.0 -100 100 -25 0.075 -3.0 Min -100 -2.0 — — — — — Max — -5.0 -100 100 -25 0.085 -3.0 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) 28 36.8 59.9 Energy (MeV) 285 305 345 Range (µm) @VGS=0V Cu Br I 43 39 32.8 -100 -100 -60 @VGS=5V -100 -100 — VD S(V) @VGS=10V -100 -70 — @VGS=15V -70 -50 — @VGS=20V -60 -40 — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRH9150 Pre-Irradiation 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A)  VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V 100  VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP -5.0V 20µs PULSE WIDTH  T = 25 C J ° 1 10 100 -5.0V 20µs PULSE WIDTH  T = 150 C J ° 1 10 100 10 10 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 ID = -22A  R DS(on) , Drain-to-Source On Resistance (Normalized) Drain-to-Source Current (A) TJ = 25 ° C  2.5 2.0 TJ = 150 ° C  1.5 1.0 - I D, 10 5 6 7  V DS = -50V 20µs PULSE WIDTH 8 9 10 0.5 - VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 0.0 -60 -40 -20 VGS = -12V  0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRH9150 7000 -VGS , Gate-to-Source Voltage (V) 6000  VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 20 ID = -22A  16 C, Capacitance (pF) 5000 Ciss   VDS = -80V VDS = -50V VDS = -20V 4000 12 3000 8 2000 C oss C rss 1 10 100 4 1000 0 0 0 40 80  FOR TEST CIRCUIT SEE FIGURE 13 120 160 200 -VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED  BY R DS(on) -ISD , Reverse Drain Current (A) TJ = 150 ° C  10 -ID , Drain Current (A) I 100  100us  1ms 10 TJ = 25 ° C   10ms 1 0.0 V GS = 0 V  1.0 2.0 3.0 4.0 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 -VSD ,Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRH9150 Pre-Irradiation 24 VDS VGS RG RD 20 D.U.T. + -I D , Drain Current (A) 16 VGS 12 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 4 VGS 0 25 50 75 100 125 150 10% TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 1 D = 0.50 Thermal Response (Z thJC ) 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ) (THERMAL RESPONSE 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak T = P DM x ZthJC + TC J 0.1 0.0001 0.001 0.01  PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com - VDD Pre-Irradiation IRH9150 VDS L 1200 EAS , Single Pulse Avalanche Energy (mJ) RG V0V -2GS D .U .T IA S tp 0 .0 1 Ω VD D A D R IV E R 1000  ID -9.8A -14A BOTTOM -22A TOP 800 600 15V 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 IAS Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V ( BR ) DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF QGS VG QGD VGS -3mA IG ID Current Sampling Resistors Charge Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + -12 V D.U.T. - VDS 7 IRH9150 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=2.06mH Peak IL = -22A, V GS =-12V ➂ ISD ≤ -22A, di/dt ≤ -450A/µs, VDD ≤ -100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ T otal Dose Irradiation with V DS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-204AE IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.