IRHE57034

PD - 94239E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level RDS(on) IRHE57034 100K Rads (Si) 0.08Ω IRHE53034 300K Rads (Si) 0.08Ω IRHE54034 IRHE58034 500K Rads (Si) 1000K Rads (Si) TM IRHE57034 JANSR2N7495U5 60V, N-CHANNEL REF: MIL-PRF-19500/700 5 TECHNOLOGY ™ ID 11.7A 11.7A 11.7A 11.7A QPL Part Number JANSR2N7495U5 JANSF2N7495U5 JANSG2N7495U5 JANSH2N7495U5 0.08Ω 0.1Ω LCC-18 International Rectifier’s R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) a nd low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 11.7 7.4 46.8 25 0.2 ±20 87 11.7 2.5 3.4 -55 to 150 300 (for 5s) 0.42 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 04/27/06 IRHE57034, JANSR2N7495U5 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 — — 2.0 7.0 — — — — — — — — — — — — Typ Max Units — 0.058 — — — — — — — — — — — — — — 6.1 — — 0.08 4.0 — 10 25 100 -100 45 15 20 25 100 35 30 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA V GS = 12V, ID = 7.4A à IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 7.4A à VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 11.7A VDS = 30V VDD = 30V, ID = 11.7A, VGS =12V, RG = 7.5Ω ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1250 520 16 — — — pF Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 11.7 46.8 1.8 125 420 Test Conditions A V ns nC Tj = 25°C, IS = 11.7A, VGS = 0V à Tj = 25°C, IF = 11.7A, di/dt ≤100A/µs VDD ≤ 25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB RthJA Junction-to-Case Junction-to-PC board Junction-to-Ambient Min Typ Max Units — — — — 19 75 5.0 — — °C/W Test Conditions soldered to a copper-clad PC board Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE57034, JANSR2N7495U5 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Static Drain-to-Source à On-State Resistance (LCC-18) Diode Forward Voltage à Up to 500K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max 60 2.0 — — — — — — — 4.0 100 -100 10 0.034 0.08 1.8 60 1.5 — — — — — — — 4.0 100 -100 25 0.043 0.1 1.8 V nA µA Ω Ω V Test Conditions VGS = 0V, I D = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS = 48V, VGS =0V VGS = 12V, ID =7.4A VGS = 12V, ID =7.4A VGS = 0V, IS = 11.7A 1. Part numbers IRHE57064 (JANSR2N7495U5), IRHE53064 (JANSF2N7495U5) and IRHE54064 (JANSH2N7495U5) 2. Part number IRHE58064 (JANSH2N7495U5) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br Xe Au LET (MeV/(mg/cm2)) 37.3 63 86.6 Energy (MeV) 285 300 2068 VDS (V) Range (µm) @V GS =0V @VGS= -5V @VGS= -10V @VGS=-15V @VGS=-20V 36.8 60 60 60 60 40 29 46 46 35 25 15 106 35 35 27 20 14 70 60 50 40 30 20 10 0 0 -5 -10 VGS -15 -20 VDS Br Xe Au Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHE57034, JANSR2N7495U5 Pre-Irradiation 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 10 5.0V 5.0V 1 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 1 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) 12A ID = 11.7A I D , Drain-to-Source Current (A) TJ = 150 ° C 1.5 10 1.0 TJ = 25 ° C 0.5 1 5.0 V DS = 25V 15 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHE57034, JANSR2N7495U5 3000 2400 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 11.7A 12A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) Ciss 1800 12 Coss 1200 8 600 Crss 4 0 1 10 100 0 0 10 20 FOR TEST CIRCUIT SEE FIGURE 13 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 10 TJ = 150 ° C ID, Drain-to-Source Current (A) 100µs 10 TJ = 25 ° C 1 1ms Tc = 25°C Tj = 150°C Single Pulse 1 1 10 100 1000 VDS , Drain-toSource Voltage (V) 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 10ms VSD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHE57034, JANSR2N7495U5 Pre-Irradiation 12 VDS VGS RG RD 10 D.U.T. + ID , Drain Current (A) 8 -V DD VGS 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4 Fig 10a. Switching Time Test Circuit VDS 90% 2 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHE57034, JANSR2N7495U5 EAS , Single Pulse Avalanche Energy (mJ) 200 15V 160 ID 5.2A 7.4A BOTTOM 11.7A TOP VDS L DRIVER 120 RG D.U.T. IAS tp + - VDD A 80 VGS 20V 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 40 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHE57034, JANSR2N7495U5 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 25V, starting TJ = 25°C, L= 1.27mH Peak IL = 11.7A, VGS = 12V  ISD ≤ 11.7A, di/dt ≤ 220A/µs, VDD ≤ 60V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 48 volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-18 PAD ASSIGNMENTS G = GATE D = DRAIN S = SOURCE NC = NO CONNECTION IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/2006 8 www.irf.com