IRHE9110

PD-97180 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) Product Summary Part Number Radiation Level IRHE9110 100K Rads (Si) IRHE93110 300K Rads (Si) RDS(on) ID 1.1Ω -2.3A 1.1Ω -2.3A IRHE9110 100V - P CHANNEL RAD-HardTM HEXFET® TECHNOLOGY LCC - 18 International Rectifier’s RAD-Hard T M H EXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC=25°C ID @ VGS = -12V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -2.3 -1.5 -9.2 15 0.1 ±20 75 -2.3 1.5 -12.5 -55 to 150 300 (for 5s) 0.42 (Typical) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns °C g www.irf.com 1 07/11/07 IRHE9110 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BVDSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -100 — — -2.0 0.7 — — — — — — — — — — — — Typ Max Units — -0.094 — — — — — — — — — — — — — — 6.1 — — 1.1 -4.0 — -25 -250 -100 100 16 4.3 3.3 21 17 32 32 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -1.5A à VDS = VGS, ID = -1.0mA VDS = -15V, IDS = -1.5A à VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS = -12V, ID = -2.3A VDS = -50V VDD = -50V, ID = -2.3A, VGS = -12V, RG = 7.5Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = -25V f = 1.0MHz f = 1.0MHz, open drain C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — 290 94 13 20.5 — — — pF Ω Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — -2.3 -9.2 2.6 138 520 Test Conditions A V nS nC Tj = 25°C, IS = -2.3A, VGS = 0V à Tj = 25°C, IF = -2.3A, di/dt ≤ -100A/µs VDD ≤ -25V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB RthJA Junction-to-Case Junction-to-PC Board Junction-to-Air Min Typ Max — — — 19 8.3 — 75 Units °C/W Test Conditions Solder to a copper clad PC Board Typical Socket For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHE9110 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source à On-State Resistance (TO-3) Diode Forward Voltage à 100K Rads(Si)1 Min Max -100 - 2.0 — — — — — — - 4.0 -100 100 -25 1.06 -2.6 300K Rads (Si)2 Units Min Max -100 -2.0 — — — — — — -5.0 -100 100 -25 1.06 -2.6 V nA µA Ω V Test Conditions VGS = 0V, ID = -1.0mA VGS = VDS , ID = -1.0mA VGS = -20V VGS = 20 V VDS= -80V, VGS= 0V VGS = -12V, I D = -1.5A VGS = 0V, IS = -2.3A 1. Part number IRHE9110 2. Part number IRHE93110 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br I LET MeV/(mg/cm2)) 28 36.8 59.8 Energy (MeV) 285 305 343 Range VDS(V) (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V 43 -100 -100 -100 -70 -60 39 -100 -100 -70 -50 -40 32.6 -60 — — — — -120 -100 -80 VDS -60 -40 -20 0 0 5 10 VGS 15 20 Cu Br I Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHE9110 Pre-Irradiation 10 10 -I D, Drain-to-Source Current (A) 1 -5.0V -I D, Drain-to-Source Current (A) VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP 1 -5.0V 60µs PULSE WIDTH Tj = 25°C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) 60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 10 RDS(on) , Drain-to-Source On Resistance 2.5 T J = 25°C -I D, Drain-to-Source Current (A) ID = -2.3A 2.0 T J = 150°C (Normalized) 1.5 1.0 VDS = -50V 60µs PULSE WIDTH 1.0 5 6 7 8 9 10 11 12 13 14 15 -VGS, Gate-to-Source Voltage (V) 0.5 VGS = -12V 0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHE9110 500 -VGS, Gate-to-Source Voltage (V) 400 VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 20 ID = -2.3A 16 VDS = -80V VDS = -50V VDS = -20V C, Capacitance (pF) 300 Ciss 12 200 Coss 8 100 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 2 4 6 8 10 12 14 Crss 0 1 10 100 -VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 1 T J = 150°C -I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 T J = 25°C 100µs 1 Tc = 25°C Tj = 150°C Single Pulse 1 10 100 0.1 1ms 10ms VGS = 0V 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 -V SD , Source-to-Drain Voltage (V) 0.1 1000 -V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHE9110 Pre-Irradiation 2.5 VGS V DS RD 2 -I D, Drain Current (A) 1.5 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1 Fig 10a. Switching Time Test Circuit 0.5 VGS td(on) tr t d(off) tf 0 25 50 75 100 125 150 T C , Case Temperature (°C) 10% 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 10 D = 0.50 Thermal Response ( Z thJC ) 0.20 1 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) P DM t1 t2 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com + - RG D.U.T. V DD Pre-Irradiation IRHE9110 VDS L 180 EAS , Single Pulse Avalanche Energy (mJ) RG D.U.T IAS -20V VGS DRIVER 0.01Ω VDD A 160 140 120 100 80 60 40 20 0 25 50 75 TOP BOTTOM tp ID -1.0A -1.5A -2.3A 15V Fig 12a. Unclamped Inductive Test Circuit I AS 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 50KΩ VG VGS -3mA Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com + QGS QGD D.U.T. - -12V -12V 12V .2µF .3µF VDS 7 IRHE9110 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = -25V, starting TJ = 25°C, L= 28mH Peak IL = -2.3A, VGS = -12V  ISD ≤ -2.3A, di/dt ≤ -540A/ µs, VDD ≤ -100V, TJ ≤ 150°C à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Ä Total Dose Irradiation with VGS Bias. -12volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. -80volt VDS applied and V GS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — LCC-18 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/2007 8 www.irf.com